1N4001FL KEXIN
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- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 Diodes General Purpose Silion Rectifiers 1N4001FL ~ 1N4007FL ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 1N4001FL 1N4002FL 1N4003FL 1N4004FL 1N4005FL 1N4006FL 1N4007FL Unit Repetitive Peak reverse voltage VRRM 50 100 200 400 600 800 1000 Surge Peak reverse voltage VRSM 35 70 140 280 420 560 700 Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Forward voltage @IF=1A VF Max.averaged fwd.current. @Ta =65℃ IFAV Peak forward surge current IFSM Maximum DC Reverse Current Ta=25℃ Ta=125℃ Typical Junction Capacitance *1 Cj pF Thermal Resistance Junction to Ambient *2 RθJA ℃/W Junction temperature Tj Storage temperature Tstg 150 -55 to 150 A 100 180 μAIR V 1.1 * 1 Measured at 1 MHz and applied reverse voltage of 4 V D.C ■ Marking NO. 1N4001FL 1N4002FL 1N4003FL 1N4004FL 1N4005FL 1N4006FL 1N4007FL Marking A1 A2 A3 A4 A5 A6 A7
- Surface Mount General Purpose Silicon Rectifiers
- Reverse Voltage - 50 to 1000 V
- Forward Current: 1 A ■ Features 0.6 0.1 2.6 0.1 Cathode Band Top View 3.5 0.2 0.05 - 0.20 1.6 0.10.9 0.1 SOD-123FL Unit:mm
www.kexin.com.cn2 Diod es 1N4001FL ~ 1N4007FL General Purpose Silion Rectifiers ■ Typical Characterisitics 0.1 Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 0.7 1.0 T =25 J T =150 J T =100 J 0.2 0.5 Fig.2 Typical Instaneous Reverse Characteristics Instaneous Current ( A)Reverse μ 200 400 600 8000 0.01 0.1 1.0 Instaneous Reverse Voltage (V) 100 T =25J °C T =50J °C T =75J °C T =100J °C T =125J °C T =150J °C Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) 5 10 20 25 30 35 40 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Fig.1 Forward Current Derating Curve Average Forward Current (A) Ambient Temperature (°C) Single phase half-wave 60 Hz resistive or inductive load