1N4001F KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 Absolute Maximum Ratings Ta = 25 Parameter Symbol 1N 4001F 4002F 4003F 4004F 4005F 4006F 4007F Unit Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 VegatloVSMR RMS 35 70 140 280 420 560 700 Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 VA1@egatloVdrawroF F Averaged Forward Current.T T=100 IFAV Peak Forward Surge Current @ 8.3ms I FSM 30 Maximum DC Reverse Current Ta=25 Ta=125 Maximum Reverse Current *1 trr us Typical Junction Capacitance *2 Cj pF Thermal Resistance Junction to Ambient R JA Thermal Resistance Junction to Lead *3 R JL jTerutarepmeTnoitcnuJ gtsTerutarepmeTegarotS 1.5 V 1.1 IR 150 -55 to 150 A A * 1 Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A * 2 Measured at 1 MHz and Applied V R=4.0 V Marking NO. 1N4001F 1N4002F 1N4003F 1N4004F 1N4005F 1N4006F 1N4007F M a r k i n gM 1M 2M 3M 4M 5M 6 M 7 Simplified outline SMAF and symbol Top View 1 2 SMAF PIN DESCRIPTION Cathode Anode PIN DESCRIPTION
www.kexin.com.cn2 Diodes Ƶ Typical Characterisitics Tj=125 C0 Tj=25 C0 Tj=75 C0 FIG.5- TYPICAL FORWARD CHARACTERISTICS ROF SUOENATNATSNIT NERRUC DRA A(. 0.1 0.01 0.05 0.5 100 0.02 0.2 FORWARD VOLTAGE. (V) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT ROF KAEPT NERRUC EGRUS DRA W )A(. 1 0010201525 0 100 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave Tj=Tj max FIG.4- TYPICAL JUNCTION CAPACITANCE PAC NOITCNUJ) Fp(.ECNATICA 0.10.01 1 10 100 100 REVERSE VOLTAGE. (V) Tj=25 C f=1.0MHz Vsig=50mVp-p FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE ROF EGAREVAT NERRUC DRA A(. 0 20 40 60 80 100 120 140 160 1.2 1.0 0.8 0.6 0.4 0.2 LEAD TEMPERATURE. ( C) o FIG.2- TYPICAL REVERSE CHARACTERISTICS 0 20 40 60 80 100 120 140 0.001 0.01 0.1 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) TNERRUC ESREVER SUOENATNATSNI) A FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM NONINDUCTIVE NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm 1N4007F 1N4001F-1N4006F Rectifier Diodes 1N4001F ~ 1N4007F
www.kexin.com.cn 3 DiodesSMD Type Rectifier Diodes 1N4001F ~ 1N4007F Ƶ Package Outline Dimensions Ƶ The Recommended Mounting Pad Size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit ˖mm (mil) Plastic surface mounted package; 2 leads SMAF A C ğALLROUND V AM e UNIT mm max min mil max min 7.9 4.7 146 130 106 193 173 ACDE HE ğ 1.6 1.3 e Bottom View HE g Top View 1.2 0.8 g g ğALLROUND E D A E pad pad