1N3889_18 GENESIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • High Surge Capability DO-4 Package
  • Types up to 400 V VRRM
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) Unit Repetitive peak reverse voltage VRRM 50 100 200 300 V RMS reverse voltage VRMS 35 70 140 280 V DC blocking voltage VDC 50 100 200 400 V Continuous forward current IF 12 12 12 12 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) Unit Diode forward voltage 1.4 1.4 1.4 1.4 25 25 25 25 μA 6 6 6 6 mA Recovery Time Maximum reverse recovery time TRR 200 200 200 200 nS Thermal characteristics Thermal resistance, junction - case RthJC 2.0 2.0 2.0 2.0 °C/W 1N3893 (R) 2.0 420 600 IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 50 V, Tj = 150 °C V 200 1N3889 thru 1N3893R VR = 50 V, Tj = 25 °C IF = 12 A, Tj = 25 °C TC ≤ 100 °C Conditions 90 90 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions TC = 25 °C, tp = 8.3 ms Silicon Fast Recovery Diode Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave A Reverse current IR VF 1.4 -55 to 150 -55 to 150 2. Reverse polarity (R): Stud is anode. IF,SM 1N3893 (R) 400 90 90 C A A C Stud Stud (R) C A A C Stud Stud (R) DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 1Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n3889.pdf

C A A C Stud Stud (R) C A A C Stud Stud (R) DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 2Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n3889.pdf

Package dimensions and terminal configuration Product is marked with part number and terminal configuration. 1N3889 thru 1N3893R C A A C Stud Stud (R) C A A C Stud Stud (R) DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 3Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n3889.pdf