1N3595 NJSEMI
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New Sersey Semi-Conductor Products, Ine. 20 STERN AVE. u TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 The 1N3595 is a high conductance extremely low leakage planar diode. Specified maximum values * for voltage drop capacitance and leakage current mean flexibility in designing circuits which re- PHYSICAL DIMENSIONS quire large numbers of diodes. In those applications where reverse current is a critical design iosmar oe parameter, the inherent qualities of the Fairchild process eliminates the problem of leakage . wim 1 OOOO degradation. inl j | The USN 1N3595 is supplied in accordance with MIL-S-19500/241A (NAVY). The electrical speci- | | | fications, as listed in Table Ill, are identical with those listed in this Military Specification. : | | ome fi i MAXIMUM RATINGS (25°C) (Note 1) mut wiv Working Inverse Voltage 125V | lo Average rectified current 150 mA h . Forward current steady state d.c. 225 mA iy Recurrent peak forward current 450 mA - iu (surge) Peak forward surge current pulse width of 1 second 500 mA is (surge) Peak forward surge current pulse width of 1 Sec. 4000 mA tom P * Power dissipation 500 mw { | 1/6 Power derating factor 4mWw/*C L Ts Operating temperature —65°C to +150°C Toy Storage temperature, ambient 65°C to +178°C NOTE: All dimensions io, ELECTRICAL SPECIFICATIONS (25°C unless otherwise noted) Symbol Characteristic Min. Max. Units Test Conditions Ve, Forward Voltage 83 1.00 Vde 1 = 200 mA ve Forward Voltage 79 92 Vde 1 = 100 mA Vey Forward Voltage 74 88 Vde 1 1, = 50mA Ve Forward Voltage 65 .80 Vdc = 10mA Veg Forward Voltage .60 75 Vde = 5mA Vey Forward Voltage 52 68 Vdc l= ima ha, Reverse Current 1.0 nA Ve = 125V he, Reverse Current (125°C) 300 nA Vi = 30V hy Reverse Current (125°C) 500 A Va = 125V hye Reverse Current (150°C) 3.0 WA Va = 125V ter Reverse Recovery Time 3.0 nSec See Table Ill c Capacitance [Note 3] 8.0 pf Ve = OV BV Breakdown Voltage 150 Vde 1, = 100 pA Quality Semi-Conductors