1N6099 ETC
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BK C INTERNATIONAL O3E D 1179983 ooooe74 o T HIGH CONDUCTANCE 7-007 LOW LEAKAGE DIODES iNG09S a a a a pant A Ee en ABSOLUTE MAXIMUM RATINGS . +B, 150 V (MIN) @ 100 pA + Vi 1.0V@ 200 mA Temperatures Storage Temperature Range -65 °C to +200 °C Maximum Junction Operating Temperature +175 °C Load Temperature +260 °C Power Dissipation . Maximum Total Power Dissipation at 25 °C Ambient 500 mW Linear Power Derating Factor (from 25 °C) 3.93 mW/°C Maximum Voltage and Currents WIV Working Inverse Voltage 125V : t, Average Rectified Current 200 mA r Forward Current Steady State 500 mA i, Peak Repetitive Forward Current 600 mA i, (surge) Peak Forward Surge Current Pulse Width = 1.0 ps 4.0A Pulse Width = 1.0 s 1.0A ELECTRICAL CHARACTERISTICS (25 °c Ambient Temperature unless otherwise noted) ° “SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS . vy Forward Voltage 0.83 1.0 Vv |, = 200 mA 0.79 0.92 v |, = 100 mA 0.75 0.88 Vv |, =50 mA 0.65 0.80 v I =10mA 0.52 0.68 v 1. =1.0mA te Reverse Current 1.0 nA V, = 125 V 300 nA V,, = 80 V, T, = 125 ae 500 nA Vi = 125 V, T, = 125 °C 3.0 pA V, = 125 V, T, = 150 °C B, Breakdown Voltage 150 7 I= 100 pA Ta Reverse Recovery Time 3.0 BS |, = 10 mA, V, = 3.5 v OK c Capacitance 8.0 pF V, = 0, f= 1.0 MHz ‘qoo" bia cotnode end 1* MIN, 160° MAH .062* MAH DIA (26MIN 4.05 MAK 1.58 MAK DO-35 PACKAGE OE SSeS . I eas
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