1N3070 SS
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
200V 0.5A Fast Switching Diode ‐ 1N3070 Small-Signal high speed switching diode in bare die form Fast Switching Speed High conductance General purpose switching applications Die Size (Unsawn) 410 x 410 16.14 x 16.14 µm mils Anode Pad Size 200 X 200 7.87 X 7.87 µm mils Die Thickness 180 (±15) 7.09 (±0.59) µm mils Top Metal Composition Al Back Metal Composition AuAs High reliability tested grades. Rev 1.0 27/9/20 Features: Die Dimensions in µm (mils)
Ordering Information
The following part suffixes apply: 200 (8) 410 (16) ANODE 180 (9.05) ANODE No suffix - MIL-STD-750 /2073 Visual Inspection “ H” - MIL-STD-750 /2073 Visual Inspection + MIL-PRF-38534 Class H LAT “ K” - MIL-STD-750 /2073 Visual Inspection + MIL-PRF-38534 Class K LAT LAT = Lot Acceptance Test. For further information on LAT process flows see below. www.siliconsupplies.com\\quality\\bare-die-lot-qualification CHIP BACKSIDE IS CATHODE Supply Formats: Mechanical Specification Default – Die in Waffle Pack (400 per tray capacity) Sawn Wafer on Tape – By specific request Unsawn Wafer – By specific request Die Thickness <> 180µm( 7 Mils) – On request With additional electrical selection – On request Page 1 of 3 www.siliconsupplies.com All d ata sheet.com
www.siliconsupplies.com Absolute Maximum Ratings1 TJ = 25°C unless otherwise stated PARAMETER SYMBOL VALUE UNIT Non-repetitive Peak Reverse Voltage VRSM 210 V Repetitive Peak Reverse Voltage VRRM 200 V Average Rectified Output Current IO 200 mA DC Forward Current IF 500 mA Recurrent Peak Forward Current If 625 mA Pulse width 1s 1 Non-repetitive Peak forward surge current IFSM Pulse width 1µs 4 A Power Dissipation PD 250 mW Operating Junction temperature TJ -55 to 175 °C Storage Temperature Range TSTG -65 to 200 °C 200V 0.5A Fast Switching Diode ‐ 1N3070 Rev 1.0 27/9/20 1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may reduce device reliability. Electrical Characteristics TJ = 25°C unless otherwise stated PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT IR = 100µA 200 - - V Breakdown Voltage VR IR = 5µA 200 - - V IF = 5mA - - 0.72 IF = 20mA - - 0.9 Forward Voltage2 VF IF = 100mA - - 1 V VR = 175V - - 0.10 Reverse Leakage IR VR = 175V, TJ = 150°C - - 100 µA Total Capacitance CT V R = 0V, f = 1MHz - - 5 pF Reverse Recovery Time trr IF = IR = 30mA, Irr = 3mA, RL = 100Ω - - 50 ns . Pulse Width = 8.3ms, Non-recurrent square wave All d ata sheet.com