1N658 FAIRCHILD
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; FAIRCHILD SEMICONDUCTOR 64 DEM 3469674 gpe7478 8 T- . 3469674 FAIRCHILD SEMICONDUCTOR 84D 27478 —_D™ . as 1N658/FDLL658 f ora: ens bile greene General Purpose Diodes A Schlumberger Company T-01 -04 . | | * BV. ..120 V (MIN) @ 100 pA PACKAGES { © Ve... 1.0 V (MAX) @ 100 mA 1N658 DO-35 FDLL658 L384 ABSOLUTE MAXIMUM RATINGS (Note 1) I | Temperatures If you need this device in the Storage Temperature Range 65°C to +200°C SOT package, an electical Maximum Operating Junction Temperature +175°C equivalent Is available. See Lead Temperature +200°C FDSO1400 family. Power Dissipation (Note 2) Maximum Total Dissipation at 25°C Ambient 500 mW Linear Derating Factor (from 25°C) 3.33 mw/°C . Maximum Voltage and Currents wiv Working inverse Voltage 100 V lo Average Rectified Current 200 mA IF Forward Current Steady State 500 mA It(surge) Peak Forward Surge Current . Pulse Width = 1.08 1.0A Pulse Width = 1.0us 40A ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) In Reverse Current Vp = 60V Vp = 60 V, Ta = 160°C. . ter Reverse Recovery Time Va = 40 V, If = 6.0 mA, Ry = 2.0k9, CL = 10 pF, Recovery to 80 k2 NOTES: ~ 1. The maximum rllage ar nung valine above which ie or asifactorypararmance may be impaired. 2: These af oeudy site ne, The latory shoud be cone en sppcaions mvesing pls er low sty cycle opraions. For product taly characte crv, fle fo Choper 4-01, EO RS 3-198 .
FAIRCHILD SEMICONDUCTOR 84 DEM 3469674 0027479 oO |
3469674 FAIRCHILD SEMICONDUCTOR 84D 27479 Dm :
—_ PDLL659/060/661 | A Schiumberger Company . General Purpose Diodes j aT 04 . © trp... 300 ne (MAX) 1N659 DO-35 1N660 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) 4N661 DO-35 Temperatures FDLL659 LL-34 Storage Temperature Range —65°C to +200°C FDLL660 LL-34 Maximum Operating Junction Temperature +175°C FDLL661 LL-34 Lead Temperature +260°C Power Dissipation (Notes 2) If you need this device in the ! : Maximum Total Dissipation at 26°C Ambient 500 mW SOT package, an electical Linear Derating Factor (from 25°C) 3,33 mw/°C equivalent is available. See FDSO1200 family. Maximum Voltage and Currents 1N659 1N660 1N661 wiv Working Inverse Voltage 60V 100 V 200 V lo Average Rectified Current 200 mA 200 mA 200 mA IF Forward Current Steady State 500 mA 500 mA 500 mA Weurgey Peak Forward Surge Current Pulse Width = 1.08 1.0A 1.0A 1.0A Pulse Width = 1.0 us 40A 4.0A 4.0A ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) ce a : IBOL| CHARACTERI ITs TEST CO} . Ip Reverse Current uA | VR=50V i 6.0 uA | VR = 100V uA | VR = 200V wA | VR = 60V, Ta = 100°C 5 1 60 BA Vr = 100 V, Ta = 100°C : uA | VR = 200 V, Ta = 100°C t tee Reverse Recovery Time Vy = 96 V, ly = 30 mA, RL = 2.0 k2, ? CL = 10 pF, Recovery to 400 ki . iors : Ie The maximum ratags ae inn values above which ie or eaistactoryparfommance may be impaled. 2: These ar sandy sate bi, Te lacory shoud be consited on application inoling pulsed or tow Guy cycle operations.
4 For produc emily characte Curves, Tota io Ghapir 4,4 for 108, 4, DI for 1NGEO and TNE
~ NL 3-199 : - i
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3469674 FAIRCHILD SEMICONDUCTOR 84D 27480 Dm
: Dec THeH : as 14N746 through 1N759 Wibeniemberger Company 500 mW Silicon Linear Diodes : a : : ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGES 7 1 Temperatures All Devices DO-35 : Storage Temperature Range 65°C to +200°C t Maximum Junction Operating Temperature +176°C Lead Temperature +260°C Power Dissipation (Note 2) Maximum Total Power Dissipation at 25°C Ambient 500 mW Linear Power Derating Factor (from 26°C) 3.33 mW/°C : ELECTRICAL CHARACTERISTICS (25°C Ambient unless otherwise noted) oo [2 | | md Te Maximum Zener Nominal Maximum Reverse Typical Characteristic Impedance Zener Voltage Current (Vp = 1.0V) Temperature (Note 4) (Note 3) @25°C @150°C Coefficient (lz = 20 mA) (iz = 20 mA) of Vz UNT poe °C IN749 22.0 43 2.0 30.0 0.055 IN750 19.0 47 2.0 30.0 0.043 (N751 17.0 5a 1.0 20.0 +0.030 IN753 7.0 6.2 on 20.0 +0.045 IN764 5.0 68 On 20.0 +0.050 IN755 6.0 75 Ot 20.0 +0,058 IN756 8.0 82 O41 20.0 +0.062 IN757, 10.0 ot On 20.0 +0.068 IN758 17.0 10.0 O41 20.0 +0.075 foes These ratings ave ting aioe above whvch the servicosity of he hode may be inpared. 2: Thane a Meugy state hte, The laclry should be consulted an appicatons involving pulsed o low duty-oycle operation, 3. Type sumbers without aufix have 10% folorance es nominal Vz. ‘Tipe numbers wih eels A have 26% olorance on nomial Vz 4. Tee toner impedance Za dried by euperanporiog# 60 Hr? mA (RMS) sionl on the 20.mA tet cutent
5 For progct amily chardctriatio cures, refer fo Chapter 4,13
—— sa 3-200
4148 I _—-
FAIRCHILD SEMICONDUCTOR 64 DE MP34b5b74 00274 3469674 FAIRCHILD SEMICONDUCTOR . 84D 27481 a : = 1N/FDLL914/A/B/916/A/B EAIRCHILD a 1N/FDLL4148/4149/4446 hl A Satomi: Coneay 1N/FDLL4447/4448/4449 High Conductance Ultra Fast Switching Diodes T~o3- oF . i ® try. ..4,0 ne (MAX) PACKAGES i} * BV... 100 V (MIN) 1N914 DO-35 : 1N916 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) 1NO14A Do-35 : 1 ‘Temperatures : 1N914B 0-35 . Storage Temperature Range "65° to+200°C ~~ 1NO16A. DO-35 | Max Junction Operating Temperature +175°C ~——1N916B 0-35 t Lead Temperature #260°C 14148 DO-35 : Power Dissipation (Note 2) tNaae Dose Maximum Total Dissipation at 25°C 500 mW Linear Derating Factor (from 25°C) 3.33mwW/ec = 1N4447 00-35 1N4448 DO-35 Maximum Voltage and Curronts 1N4449 DO-35 wiv Working Inverse Voltage 75V — FDLL914. LL-34 lo Average Rectified Current - 200mA —-EDLL O16 LL-34 I; OC Forward Current 300mMA EDV Lotaa L34 if Recurrent Peak Forward Current 400 mA if(surge) Peak Forward Surge Current FOLL914B LL-34 Pulse Width = 1.0.8 1.0A — FDLL916A LL-34 Pulse Width = 1.0 us 4.04 — FDLLO16B L384 FOLL4148 LL-34 FDLL4149 LL-34 FDLL4446 LL-34 FOLL4447 LL-34 FOLL4448 LL-34 FDLL4449 LL-34 If you need this device in the SOT package, an electical equivalent is available. See FDSO1200 family. ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) BV Breakdown Voltage 100 VJ tg = 100 4A . 76 V_ | Ip =5.0uA IR Reverse Current 26 mA | VR=20V 50 uA | VR = 20V, Ta = 160°C 6.0 uA | VR=75V Ve Forward Voltage 1N914B, 1N4448 0.62 0.72 Vv Ip = 6.0 mA 1N916B, 1N4449 | 0.63 | 0.73 V_ | ip = 5.0mA 1N914, 1N916 = 1N4148, 1N4149 } 10 v le = toma 1N914A, 1N916A . 1N4446, 1N4447 } 10 Vv | le = 20ma 1NOI6B, 1N44ag 10 |v | ip=30ma 1N914B, 1N4446 1.0 Vv Ip = 100 mA ter Reverse Recovery Time if = 10 mA, V; = 6.0V, 1 RL = 100 2 Rec. to 1,0 mA i notes: {+ Maximum ratings ac tinting values above which be or salstactorypaormence may bo impaired - : 2 Thouo are alendy alate init. The aciory should be consslog on eppictins invlueg pulsed os low duly-cycl operation, : 3: For temlycharacteriatic curves, rele to Gheplar 4 Oa : ee eens t 3-201 |
FAIRCHILD SEMICONDUCTOR 84 DE RS4b9b74 O0e746e O T -
3469674 FAIRCHILD SEMICONDUCTOR 84D 27482 Ome
: 1N/FDLL914/A/B/916/A/B 1N/FDLL4148/4149/4446 1N/FDLL4447/44448/4449 . 7-03-04 i j
7 ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)
c Capacitance N14, INOT4A i 1N914B, 1N4148 pF | Va =0,f= 1 MHz 1N4446, 1N4447 Beh 1N916B, 1N4I49 pF VR = 0,1 = 1 MHz 1N4448, 1N4449 Voltage 1N914B, 1N916B v 0.1 us pulse width, : 1N4448, 1N4449 5 kHz - 100 kHz rep. rate a 3-202 Ad
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3469674 FAIRCHILD SEMICONDUCTOR 84D 27483 a ‘
: h Teun oe 1N957 through 1N973 Eee a 500 mW Silicon Planar Zener Diodes i a | ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGES All Devi Temperatures wiees 00-35 : Storage Temperture Range 65°C to +200°C. 3 Maximum Junction Operating Temperature +175°C Lead Temperature +260°C Power Dissipation (Note 2) Maximum Total Power Dissipation at 25°C Ambient 500 mW Linear Power Derating Factor (from 25°C) 3.33 mwW/°C ELECTRICAL CHARACTERISTICS (25°C Ambient) sywpon [ve [ze | ty [tx [me [om [ve TO Nominal |Maximum | Test Maximum Test jaximum| . Test Voltage ‘Typical laximum Zener Zener Current |Zener Knee | Current |Reverse femperature| Zener Characteristics | Voltage |impedance| Impedance Current 20% 10% +5% | Coefficient | Current (Note 3)| (Note 4) (Note 4) @Var V2 vz Vz of V, | (Note 6) . . @x | @kr @lx Tolerance | Tolerance |Tolerance i UNIT [ov [a [om [oo {im [ow [ov [ov fv [ wec | ma IN960 9.1 75 14.0 700, 05 26 58 66 6.9 +0.068 36 : INg62 11.0 95 115, 700 0.26 6.0 7.0 80 a4 | +0073 | 28 i eee SY 3-203 . i . t
FAIRCHILD SEMICONDUCTOR oy pe suesn74 goe74ay 3 I 7 . ' 3469674 FAIRCHILD SEMICONDUCTOR 84D 27484 De a 1N3064/4305/4454 T-03-°? as . FDLL3064/4305/4454 A Schlumberger Company ; Ultra Fast Low | Capacitance Diodes © thr. .4.0 ne @ ly = 10 mA, Ip = 10 mA, Vy = 1.0 4N3064 0-35 © BV...75 V (MIN) 1N4305 DO-35 1N4454 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) FDLL3064 LL34 Tongrorage Temperature Ri e5°cto +2000 © EDT LASOS tee lorage Temperature Range 65°C to 4 nf Max Junction Operating Temperature Fi7eeo — FOLLAA54 LLss Lead Temperature +260°C It you need this device In the ! Power Dissipation (Note 2) SOT package, an electical . Maximum Total Dissipation at 25°C 500mW equivalent is available. See Linear Derating Factor (from 25°C) 3.93mW/°C —_ FDSO1200 family. Maximum Voltages and Currents wiv Working Inverse Voltage 50V lo Average Rectified Current 100 mA ie Forward Current Steady State 300 mA if Recurrent Peak Forward Current 400 mA ig (surge) Peak Forward Surge Current Pulse Width = 1.08 1.0 Pulse Width = 1.0 ns 4.0A ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) SYMBOL | CHARACTERISTIC [ min | max | units | Test CONDITIONS VE Forward Voltage 0.610 | 0.710 Vv | ip =2.0mA 0.650 | 0.650 v Ip = 1.0 mA 0,605 | 0.575 v Ip = 250 vA 1N3064 ineeet 1.0 v Ip = 10mA 1N4305, 0.70 0.85 v Ip = 10 mA Ir A | Vp=60V BA | Vp = 50V, Ta = 150°C ter Reverse Recovery Time (Note 8) 1N4305 iy = 10 mA, V; = 6OV, RL = 1009 1N3064 ly = ly =10 mA, RL = 1009, 1N4305, 1N4454 Ve = 1.0V RE Rectification Efficiency (Note 4) [as | | ® [t= tomnz AVE; ec | Forward Voltage Temperature ey [eSiawases || ae [re tore: {1 The maximum range are nag valuas above which ie or autitacory perfomance may be impaced { 2. Theee are atondy eat tn. The actry shoul be conned on applicnonsivovng puedo low duy-cyte operation : 4; Recttenionefiercyadtinad athe rato of de lon voltage o peak np voltage Lothe detector cei, measures wih 2.0 rmelnpt tothe cut. Loadreletanee 609 4d . Sapeciance 20 9 6, The value for Vp/*C I a typical vale not misinum or maximum, 8: Fer product tamiycharactraie cures alr fo Chap & Od : EE \\ 3-204 |
. FAIRCHILD SEMICONDUCTOR ay pe Bsyes74 ooe7uas s | ' 3469674 FAIRCHILD SEMICONDUCTOR 84D 27485 Dt oa Leen epee — PLL 3070/4038 To 3-04 el - A Schlumberger Company . . High Speed High Conductance Diodes a . ‘© BV...200 V (MIN) PACKAGES © Ip... 100 nA (MAX) 1N3070 DO-35 1N4938 DO-36 ABSOLUTE MAXIMUM RATINGS (Note 1) FDLL3070 LL-34 Temperatures FDLL4938 LL-34 | Storage Temperature Range 65°C to +200°C Max Junction Operating Tem ture ° 1 toad Temperate $228°S it you need this device in the H SOT package, an electical Power Dissipation (Note 2) equivalent Is available. See Maximum Total Dissipation at 25°C Ambient 600 mW FDSO1400 family. Linear Derating Factor (from 25°C) 3.33 mw/°C Maximum Voltage and Currents wiv Working Inverse Voltage 175 V lo Average Rectified Current 200 mA Ip Forward Current Steady State DC 500 mA if Recurrent Peak Forward Current 600 mA ‘it (surge) Peak Forward Surge Current i Pulse Width = 1.08 10 A { Pulse Width = 1.0 us 400A ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC. [mn | Max | unmts | TEST CONDITIONS Ip Reverse Current 100 nA VR = 175V ° 100 uA Vp = 175 V, Ta = 150°C NOTES: ima ratings re ilng values above which eof elsactory pafornance may be inpae.
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3: Recovery 0 10°TK seine at the ratio of delved volage to peckitnput votage othe detector cxcullzmaasured wth 2.0 ras inpu othe ceu Loadrenatance:60Kf, ous 5. SNOOTO and NeGGB are lacialy and mechasialy ies & Poeposuct emily charactor céve, rele fo Chapter 4,01. ET 3-205 i si
; FAIRCHILD SEMICONDUCTOR 84 DEB sye9b74 oo274ab 7 r t
3469674 FAIRCHILD SEMICONDUCTOR 84D 27486 Dm
separa 4N3595/6099 7? 6/07 ee . FDLL3595/6099 ‘A Schlumberger Compa High Conductance Low Leakage Diodes . a 1N6099 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) FDLL3595 Less Temperatures FDLL6099 LL-34 | Storage Temperature Range 65°C to +200°C Max Junction Operating Temperature +175°C Lead Temperature +260°C It you need this device in the Power Dissipation (Note 2) SOT package, an electical Maximum Total Dissipation at 26°C Ambient 500 mW equivalent is available. See Linear Derating Factor (From 26°C) 3.33 mW/°C FDSO1500 family. Maximum Voltage and Currents : wiv Working Inverse Voltage 126V lo Average Rectified Current 200 mA IF Forward Current Steady State 500 mA if Peak Repetitive Forward Current 600 mA it (surge) Peak Forward Surge Current Pulse Width = 1.08 1.04 Pulse Width = 1.0 xs 4.04 U _ ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) { ‘SYMBOL, CHARACTERISTIC [wn | Max | Units | TEST CONDITIONS | Ve Forward Voltage 0.863 1.0 v Ip = 200 mA 0.79 0,92 v Ip = 100 mA 0.76 0.88 v ip = 60 mA 0.65 0.80 v Ip = 10mA 0.60 0,76 v Ip = 5.0 mA 0.52 0.68 v Ip = 1.0 mA Ig Reverse Current 1.0 VR = 125V 300 Vp = 20V, Ta = 125°C ! : 600 Vp = 126 V, Ta = 126°C i : 3.0 Vp = 126 V, Ta = 150°C i ter Reverse Recovery Time [| so | « | Ip = 10mA, V; = 3.6 V, RL = 1.02 : c Capacitance ee ee : BV Breakdown Voltage [wo [| | v | TR = 100 uA : NOTES: nvm tating ae ing values above whichis oc salalactry pafomance maybe Inpaed. aoa anne aig a ene The tectry shout bo consfted on applications hvlving pulsed ot low dy-cyle operation. 3 Taosos and nedoo re eecticly end mechanical teeta. 4 erproduct temyehureteitc curves. rater to Chapter 4,02 ne nl 3-208 J i : 3 : “ET
FAIRCHILD SEMICONDUCTOR By DE 1 B4b9b74 O02748? 4 | “7 SN ES e-9e a 7-7-7 FAIROnILe oat rl al 1N4150/FDLL4150 A Schlumberger Company 1N4450/FDLL4450 High Conductance Ultra Fast Diodes tye. 4.0 ne (MAX) PACKAGES © Ve... 1.0 V (MAX) @ 200 mA 1N3600 DO-35 41N4150 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) 1N4450 DO-35 Temperatures FDLL3600 LL-34 Storage Temperature Range —65°C to +200°C FDLL4150 LL-34 Max Junction Operating Temperature +176°C FDLL4450 LL-34 Lead Temperature +260°C Power Dissipation (Note 2) If you need this device in the Max Total Power Dissipation at 25°C Ambient s00mw SOT package, an electical Linear Derating Factor (from 25°C) 3.33mw/°c equivalent is available. See FDSO1200 family. Maximum Voltages and Currents 14N3600 1N4150 1N4450 wiv Working Inverse Voltage 50V 50V 30 V lo Average Rectified Current 200 mA 200 mA 200 mA Ip DC Forward Current 400mA 400 mA_—-400 mA it Recurrent Peak Forward Current 600mA 600mA 600 mA itfsurge) Peak Forward Surge Current Pulse Width = 1.08 1.0A 1.0A 1.0A ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) 1N3600 ‘SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS ‘ [aan [wa | iT | BV Breakdown Voltage vo | ip =6.0nA v IR = 5.0 nA Ip Reverse Current 100 nA | VR=50V 60 nA | VR=30V 100 uA | VR =50V. TA = 150°C. 50 uA | Va = S0V. Ta = 160°C Ve Forward Voltage 0.42 0.54 Vv Ip = 0.1 mA 0s4 | 062 | 062 | 0.64 Vv Ip = 1.0mA . 066 | 074 | 0.64 | 0.76 v Ip = 10 mA 0.76 0.86 v Ip = 60 mA 0.82 | 0.92 | 0.80 | 0.92 v Ip = 100 mA 0.87 1.0 1.0 v Ip = 200 mA ter Reverse Recovery Time I = I = 10 mA to 200 mA, : (Note 3) Ry = 100.9 : It = lp = 10 mA, RL = 1009
5 It = ly = 200 mA to 400 mA,
RL = 1000 tir Forward Recovery Time If = 200 mA, ty = 0.4 ns, Vie = 1.0 ores + Maximum rating are ling values above which Me or stisiactory performance may be impaled Eden are sleady nate ts, Thelaciory sould be consuted on appicelins Involving puted or iow duy-cycl operation. 3, Recovery to0.1 4 Fer tamly characteristic cures, rete to Chapter 4,4. eS 3-207