1N25AR ETC1
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SILICON POINT CONTACT MIXER DIODES ASI Point Contact Mixer Diodes are. They feature high burnout resistance, low ‘These mixer diodes are categorized by noise designed for applications from UHF through _ noise figure and are hermetically sealed. figure at the designated test frequencies 26 GHz. They are available in DO-7 DO-22, 00-23 _from UHF to 26GHz. and DO-37 package styles which make them suitable for use in Coaxial, Waveguide BAND FREQUENCY (GHz) and Stripline applications. UHF Upto? : L 1to2 s 2to4 c 4to8 x 8 to 12.4 Ku 12.4 to 18.0 K 18.0 to 26.5 These diodes are available as matched pairs and are supplied in either forward pairs (M) NOISE FIGURE TEST SCHEMATIC or forward/reverse pairs (MR). The matching criteria for these mixer diodes is: LOCAL OSCILLATOR 1. Conversion Loss—AL, = 0.3dB 8.578 he ‘bowen METER maximum HPAIZA 2. |, Impedance—AZ,- = 25 OHMS maximum | “9.6008 Paecision, The overall noise figure is expressed by the ATTEN following relationship: CHOKE & DC RETURN NF, = overall receiver noise figure ~100B > NR, = output noise temperature ratio of the A => mixer diode Lr a ET | NF, = noise figure of the I.F amplifier | 222 (1.50B) 202. L, = conversion loss of the mixer diode 25Q ia "y Aud Re pt | i) verecion SY Te NOISE FIGURE METER NOISE VSWR, ZI HP 8970A SOURCE . MEASUREMENT HP346B 01-18 GHe NOISE SOURCE DRIVE L } .
f ——— TYPICAL PERFORMANCE
5 NOISE FIGURE VS FREQUENCY soo IF IMPEDANCE VS LO POWER
0 Ay= 22 OMS, VA, 450
Po faioe | oT | YT PAL TE TT 6.75 4 a 125 ett LEE) IN Et S 65 4 “400
8 Y gt
pet ttllet it) gL Nt S 625 mp. = 75 a xX titi tt} sy | 60 350 ~ <2 E2008 Pid e NI BEET ETT TT) $e EEE ISN 55 300 CN 1 3 6 7 9 H 8B 6 WD -0 8 6 4 2 0 2 4 4 FREQUENCY (GHz) LO POWER LEVEL (d8m) a0 NOISE FIGURE VS LO POWER 20 VSWR VS LOCAL OSCILLATOR POWER 18 7 16 \\ \\ Fig= 9.375 GHe BNE ) nemo gt \\ 16 i SERGE BEENEELT TEL] & 8 = ' FENCE / NUE ATT a / “LIX ELEY] Alli
66 N A
|i | NY 1 ll | 64 —— 10 “10 8 6 4 2 0 2 4 6 ol ot 10 10.0:
3 LO POWER LEVEL (dBm) LOCAL OSCILLATOR POWER (mW)
POINT CONTACT MIXER DIODES L, S, C-BAND TYPE NUMBER NOISE FREQUENCY MATCHED PAIRS. NOISE! NOI BAND Two ronwano | ONeFoRWARD | Phi FIGURE FORWARD REVERSE REVERSIBLE | — POLARITY Pala? MAX. NB 7 100ES DIODES : = w2Ic 1N21CR || mN21cM INZICMR 83 ——— a === =— si IN2IF IN2IFR | | IN2IFM IN2IFMA || 6.0 Eee aaa —— rs = wow | wow | | eww | ere | | ss = > = Pos fc Yc | nase || ts = ee ee ee ee = mew | mou || worm | woe | | so = es es aan eee en i A aa i aie a aia. - ie
ELECTRICAL CHARACTERISTICS > SPE eee eee Es es es ee = so [wo oo | a | = | oa | nsr |oce | so [wom | - | - | wo | os | mer | oor ao | wo [oo | - | - | wo | os | mere | or : so {0 [oo [io | - | wo | os | naos | ooze ao | wo [oo | io | - | ow | os | meme | mor sa SS eee co | so [wo [is | | ow os | oon | ote _| wo [aw foo |e | om Yo | mo | toe |
POINT CONTACT MIXER DIODES X-BAND . TYPE NUMBER NOISE Frequency MATCHED PAIRS noise? _ BAND rworonwano | OMEFORWARD ) fi FIGURE FORWARD REVERSE REVERSIBLE | POLARITY POLARITY MAX. Ny, dB DIODES " MAX. DIODES W236 IN23CR || IN23CM IN23CMR 95
12510 IN2510R } | IN2510M IN2510MR 95
iniag INI49R | | 1N149M INIA9MR 83 1N230 IN230R || 1N230M 1N230MR 28 IN23E IN23ER || IN23EM IN23EMR | - | 28 — = IN23F IN23FR | | IN23FM IN23FMR | - | 70 = ee a eee St — [cas | ————| x 1N236 IN236R 1N236M IN236MR 65 Ss es ee Tee od ee ee = x INB320 1NB32CM 65 canned = INZ3H IN2SHR || 1N23HM IN23HMR | - | 60 : _ a — . & .
& woes ete fae Re St nen em So ” : — ~~ - .- ———— ELECTRICAL CHARACTERISTICS > TEST CONDITIONS i PACKAGE j eonwaur dhs vswR CONVERSION Frequency paver BASIC OUTLINE ERGS MAX tae MH owt TYPE [ mi | MAX_| bests [ | we | | sf | a I ee eee ae [20 [sw fw | os | os wor | mz FReeeaee — | 20 [as fos | os | | as wow | zs | Ee eae a a ee = . ee ee ee = = |_20 [a fo | io | | os miss | ooo | ee ee ee | 20 [awe foo | io | | os |to|e = a Cd I 7 = .
POINT CONTACT MIXER DIODES Ku, K-BAND TYPE NUMBER NOISE sntueney POLARITY. MATCHED PAIRS Noe! BAND ; rworonwaro | OM FaRWARD | i FIGURE FonWARO reverse | neversiue | povariry | OM REIERS WAX Ni, dB DIODES ( MAX. DIODES woe | | roa | vann - 1N788 IN7868 || IN78BM n70BuR 100 wN78C n78ce 7 IN7@CM n7ecR | - | 95 IN7BE IN7BER | | IN7BEM IN7BEMR | - | 89 1N786 IN78GR || IN7a6M IN7BGMA || 70 IN26A IN26AR | | iN26AM IN26AMA Ng 1268 12668 | 1N266M N266MR 110 ee ee ee as (4) (25) 5.64 1.0 MIN. [19.4
230 Ween lies)
- Oil 0220/26 adgie 0.735 applies only to 0. | co apps ny to rag «NOTE (NOTE 2) 2. Marking to be confined to | 0.147 T Tass an this region, MIN. 65 ‘wi >) {2 pa 105 | my loz) te TWO PLACES = 2.67 533 671 : ~~ 0.838 0.033 0.638 1.60 2088 4 (72) (ie, 0.031 O—INNER CoNoUCTOR . AEE ONLY . D037 .
- - - —— ri : —— a ELECTRICAL CHARACTERISTICS > TEST CONDITIONS
4 CONVERSION lo PACKAGE
BURNOUT cas VSWR 10S: FREQUENCY POWER BASIC OUTLINE ERGS MAX MAX ¢B Mile AW TYPE a Ee wo [oo [ow | rs |e | tt wr ‘0 to wre | 007 wo [a |e | is | | tm woot | aos as [ao foo [is | rs | coms | to |e | oar 2.39 (4) N 0 T E Ss 0.094 0.092 8 | ; 7 i 1. Test Conditions: NFig= . (5G az22” 0.196 a ii 0292" 1742, . fg —_— -— 2030 L “2. IFimpedence is measured 495 ‘90 8.080 0.199 te by modulating the 0.190 ¢ 0.620 2193 ¢ 1.057 : ‘spocified test frequency 0.180 1.762 5.05 0.047 wt 2 {p0ahe signal LA aa) + 0.766 4 457 new ‘ 11) spaciidicidnt power 0.800 1, Base removable, on =) \\{ 219 Enclosing prong with 3. Broadband Device. (as ) dimensions same as other . 20.3 prong. A D023 | Removable Base D022 | Fixed Base : :