1MBK50D-060S FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Small molded package
  • Low power loss
  • Soft switching with low switching surge and noise
  • High reliability, high ruggedness (RBSOA, SCSOA etc.)
  • Comprehensive line-up

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Equivalent Circuit Schematic Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltaga V GES Collector DC Tc=25°C I C25 current T c=100°C I C100 1ms Tc=25°C Icp Max. power dissipation (IGBT) P C Max. power dissipation (FWD) P C Operating temperature T j Storage temperature T stg Screw torque - Rating 600 ±20 150 200 130 +150 -40 to +150 39.2 to 58.8 Unit V V A A A W W N·m C:Collector E:Emitter G:Gate IGBT + FWD Electrical characteristics (at Tc=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Switching Time Turn-on time Turn-off time FWD forward on voltage Reverse recovery time I CES IGES VGE(th) VCE(sat) Cies Coes Cres ton * tr * trr2 toff tf ton * tr * trr2 toff tf VF trr – – 1.0 –– 1 0 4.0 5.0 6.0 – 2.4 2.9 – 2500 – – 240 – – 130 – – 0.15 – – 0.09 – – 0.03 – – 0.50 0.62 – 0.10 0.17 – 0.15 – – 0.09 – – 0.03 – – 0.50 0.62 – 0.10 0.17 – 2.0 2.5 – 0.06 0.10 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=50mA VGE=15V, IC=50A VGE=0V VCE=25V f=1MHz V CC=300V, IC=50A VGE=±15V RG=33 ohm (Half Bridge) Inductance Load V CC=300V, IC=50A VGE=+15V RG=8 ohm (Half Bridge) Inductance Load I F=50A, VGE=0V IF=50A, VGE=-10V, VR=300V, di/dt=100A/µs mA µA V V pF µs µs V µs Symbol Characteristics Conditions Unit Min. Typ. Max. *Turn-on characteristics include trr2. See a figure in next page. Thermal resistance characteristics Thermal resistance – – 0.63 – – 0.96 IGBT FWD °C/W °C/W Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) Rth(j-c)

Outline drawings, mm TO-247 Switching waveform (Inductance load) Mesurement circuit Gate Collector Emitter

Collector current vs. Collector-Emitter voltage Tj=25°C Collector-Emitter Voltage : VCE (V) Collector Current : IC (A) Collector Current : IC (A) Collector-Emitter Voltage : VCE (V) Collector current vs. Collector-Emitter voltage Tj=125°C Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25°C Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125°C Collector-Emitter Voltage : VCE (V) Collector-Emitter Voltage : VCE (V) Gate-Emitter Voltage : VGE (V) Gate-Emitter Voltage : VGE (V) Switching time vs. Collector current VCC=300V, RG=8Ω , VGE=+15V, Tj=125°C Switching time vs. Collector current VCC=300V, RG=33Ω , VGE=±15V, Tj=125°C Switching time : tf,toff, tr, ton, trr2 (nsec) Switching time : tf,toff, tr, ton, trr2 (nsec) Collector current : I C (A) Collector current : I C (A)

Gate resistance : R G (Ω ) Switching time vs. RG VCC=300V, IC=50A, VGE=+15V, Tj=125°C Switching time : tf,toff, tr, ton, trr2 (nsec) Gate resistance : R G (Ω ) Switching time : tf,toff, tr, ton, trr2 (nsec) Switching time vs. RG VCC=300V, IC=50A, VGE=±15V, Tj=125°C Dynamic input characteristics Tj=25°C Collector-Emitter voltage : VCE (V) Gate charge : Qg (nc) Capacitance vs. Collector-Emitter voltage Tj=25°C Capacitance : Cies, Coes, Cres (nF) Collector-Emitter Voltage : VCE (V) Reverse Biased Safe Operating Area R G=8Ω , +VGE 20V, -VGE=15V, Tj 125°C=<=< Collector current : I C (A) Collector-Emitter voltage : VCE (V) Collector-Emitter voltage : V CE (V) Collector current : I C (A) Forward Bias Safe Operating Area Gate-Emitter voltage : VGE (V)

Reverse recovery time vs. Forward current VR=300V, -di/dt=100A/µsec Reverse recovery time : trr [nsec] Forward current : I F (A) Forward current : I F (A) Reverse recovery current : Irr [A] Forward voltage vs. Forward current Forward Current : I F [A] Forward Voltage : V F (V) Reverse recovery chracteristics vs. -di/dt VR=300V, IF=50A, Tj=125°C Reverse recovery time : trr [nsec] -di/dt [A/ µsec] Reverse recovery current : Irr [A] Transient thermal resistance Reverse recovery current vs. Forward current VR=300V, -di/dt=100A/µsec Thermal resistance : Rth(j-c) [°C/W] Pulse width : P W (sec)