1MBI600S-120 FUJI

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EEG) — Thowas Son. SPECIFICATION Device Nane : IGBTMODULE Type Name: TMBIGOOS“420 3353 Beaks _ Spec. No. MS5F_5055 _ Bee es zg223 23522 Fuji Electric Co.,Ltd. | Matsumoto Factory [= One [_wame _[arenoven| / Fuji Electric Co,Ltd eee oa, 12 sor 5055 VA== HO4-004-07

Classi- Applied | Date fication Ind. Content date Drawn Checked | Approved AE Py Tf UE TL $5558 He gates eRe d5s38 “ Pf, tft Hod 004 08

{MBI600S-120 4. Outline Drawing ( Unit : mm) 1o8 . 93:0 3 4-96 520.3 ; | © | Oi A i ~ 3 ae E ii | far , | 2] . DgEs 5 g t eees &5 : Van Besa H _ gal : bbe 2-M4 \\2-M8 ses4 RY 13.5 Beets RY 6. Smin * onin BERSe 25380 az5a2 ind a ; 4} 2. Equivalent circuit ; G E a : 37 Ee Fuji Electric Co.Ltd. MSS5F 5055 Aaa H04-004-03 IN

  1. Absolute Maximum Ratings (at Te= 25C unless otherwise specified ) Maximum a [ColectorEmitier tage [EST ta [SateEmieromge [ees ee Bic a A ee ee pew ee a a ee a Te [Cotesia PowerBiespaton [RET ewe | ats [metiontempemtre TTT [Sige tarbecte coe oe a a a Terral ae (1) All terminals should be connected together when isolation test will be done. {*2} Recommendable Value : Mounting 4.0+-0.5N'm (M6) | Terrninal 10.0+-1.0Nem (MB), 1.5+-0.2Nm (M4) be 03 3 | zese | eyte3 4, Electrical characteristics (at Tj= 25C unless otherwise specified) Ba28s i ee ee nie neato a Vae= ~ OV, YCE= 1200V 20 | ma Tit | [Sseemermmoramnen [ees oes ov. vasa |e fe HEE | [frets omoe [weeny ros= sow, wo ewmal cs | 72 | a8 | v | RaeeE Collector Emitter re) a MR Cl Me TaaEE | | ssuraton tage b= awa Cae ee fae tec tt input cepactence Re Cae he RREEE | [Output copactionce [cae |vce= tov | 7ec00| =| F [Fee tarwercamaciee [Gre t= 1 Whe [=F Tac Be a [of 0a [Oe iy vee= t5v eae Le eT EO ae | Fexvapet on eas ~| Fe [r= soa | = ac [fee | 34 |v femora Gee pe] [Reverse recovery time Tr Fe on _ [fos ue 5. Thermal resistance characteristics eee ee ka bd or (eo) Lr ee CC = This is the value which Is defined mounting on the additional cooling fin with thermal compound. Fuji Electric Co,Ltd. A MS5F 5055 PE H04-004-03
  1. Indication on module . Fuse IMBIG00S-120 a a : Lot No. Place of manufactur ing (code) 7. Applicable category ‘This specification is applied to IGBT Module named 1MBI600S-120, é 8. Storage and transportation notes . The module should be stored at a standard temperature of § to 35C and humidity of 45 to 75% . ; Store modules in a place with few temperature changes in order to avoid | 3353 condensation on the module surface. | 2 ii ; | ip . Avoid exposure to corrosive gases and dust. chee 3 Ad . Avoid excessive extemal force on the module. sake 4 2 iE a Bs . Store modules with unprocessed terminals. gziss Fin iit . Do not drop of otherwise stuck the modules when tranporting. she Puke 23 €. Be: . Please connect adequate fuse or protector of circuit between three-phase line arid this product to sian prevent the equipment trom vausing secondary destruction. 9. Definitions of switching time . Rae Co ov < ' R ee Mi ie k 10s ve | te ra ,— —— 2 | vet id | = we Fuji Electric Co,Ltd. A MS5F 5055 A== H04-004-03

“Collector current we. Ce lctor-Emiter voage Collactor current 16. Cd lectbr-Enmer voltage \\ 140 280 typ 140 Th 128 tye) | Ter Ey = t Pee | Ee Ms = _ 5 oO 1 2 3 4 s Cobecta -Exnitter votlage ; VOE [V} Collecer - Emitter voliage : VCE [V} Cohecoraurtent ve. Cdixtbr-Emiter vollage Collector Emiter volage ws. GaeEmiterwitag

140 VGE=8V yp) ” Te25C typ)

e3222 = 8 3s | We) toe I astgs 5 eo Z| bo | HH) | SEEPS S5rs8 2 so : eo 12004 ' ua) fseeey7op | | +} ee Babee 20 PA 3 ten 300A, a) pee Pe f3i3: *s 2 3 4 & °6 0 6 E) EJ Collector - Emitter voltage : VOE [V} Gate- Emitter wttag. : VGE IV] Capacitance ve. CollecorEmiter votage typ) Dynamic Gate charge typ) esti: VGEsOy, & IMM, T=25C 100 Veo n€00V, le=G0A, T= 250 * i foeceee > 3a PT et a ae Sw Se aie g /\\3 & ie w {ool { i § vce EEE ea ses “ wn? 3 2 2 63 H ® o So - 100 ° ae ae ag = ; .o s ©» 6 >» S D SB 0 600 10m 7150 200 Collecter - Emitter votiage : VCE [V} Gate char : Gg [nC] : . ; ey toa Fuji Electric Co.Ltd. A MSSF 5055 Vina H04-004-03

Swiching fe va Colisstreunent (typ) Siriching me vs. Collector ourent (yA) Vees600V, VGE=+-15V, Row 1Sohm, T= 250 Vec=f10V, VGE=+45V, Rg= 150nm, Te @5C 3 = SEEnatone _° => 1000 b to Tt | i Saye pee I cla fais oe a é = 500 } = 00 £100 oe ee ao ee ey | so L a A 60 ° 209. 400 ~«600~=~S«iODSSC« 0 © cr a eT) Caleta curnent : ic [A] Calectercurmnt : le [A} Switohingtime ve, Gaterssistance (typ) Sweching loss ve Collactor curent (yn) Vom600V, le=60DA, VOE=1-15¥, Tye 28C Voos600¥, VGE=+-18V, Rgct Sotm 0000 — — 180 i 382 | z a HB] ead poem) 4" e" Hades | 2 sof - : : Z [Az Ha Hee H aa Ne gS EES oaney En(iac, iis? 2 sei. ‘ Eid a dicradetared 8 40 Sf emer 35e3F roof 4 a je pS a eee a |* “ete Fee zg323 pobigh EEE BPs j i Bsikz ost 10 50 f) a eT) Ga redetnce : Ra [orm] Gdlecta current : te [A] Swiching!loss vs. Gate redstance (typ) Raveue bias safe oparoing area VeesB00V, 10-600A, UGE~=-15V, The 1256 ang NSENSY: MOECOISY, Rgo=t.Sohm, Teet26C ise PCr a Ti ? titi VY Eon — 100 = = : iii < FA he j 3 600 oe So it _ | | a8 ot 10 30 0 goo 400 600 800 1000 1200 1400 Gaw msitarce : Rg [/1] Collector-Emiter voltage : VCE LV] , 77 ER Fuji Electric Co.Ltd. . MS5F 5055 A= 104-004-03

Fonvasi current va, Fowad onvwkags (yp) Reverse cowry cyaacwrisics (YP). 4400 2000 Vee-00V, V GE=s-15V Aiget Sahm ~ ete Ed mas a3 nib) ae | z Pa ns ESS ren Sy paren we behases nal 3 600 A & 100 ben (260) 7 200 7 zé Hid °o 4 2 3 4 56 o 200 400 600 800 1000 Fowani om vokage : VF IV] Forward curent : IF [A] Tensiert thermal esitame Buti : at i f Piss} Pe sstth ae ee Hil e fete eo Pres . a ea EL aed 5 oot fmt zRite ‘eS o01 001 cr , = Pulse whit) ; Pw fsoc] Fuji Electric Co.Ltd. A MSS5F 5055 Yee H04-004-03