1MBI600PX-140-03 FUJI

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Messrs, Rockwel | Automat ion , Device Name : |GBT Module Type Name ss: JMB | GOOPX—1 40-03 a Spec. No, _ MS5F 48 5 l ee isis esses ERE? . Fuji Electric Co,, Ltd. Matsumoto Factory a ad Fuji Electric Co,Ltd ry c=] PR | Hy 91 bo SMe | 3| MS5F4851 Ye PT itn s H04-004-

“oa at Date | fication Ind, Content date Drawn | Checked | Approve “yam meet) pt | ae 3B25 oa | HET | Fuji Electric Co.Ltd. | MS5F4851 2% H04-004-

1, Outline Drawing Unit : mm 11081 9320.2 498.8 1320.2 2140.2 2920.2 ee | PEL ©] +—

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& es eo Haid] 45 3 24.5 awe 2; Equivalent circuit Cot yt Sz G subE Fuji Electric Co.Lid. :| MS5F4851 Ye H04-004-03

  1. Absolute Maximum Ratings ( at Tc=25°C unless otherwise specified ) | [600 | Collector Ee eee | A current a SCC |) | [is ie pose 00 Vex power Gissipation | _ Fe | i00”—S—~d Ca Screw torque | Terminals #2 [0 Nem Note : #1 Recommendable vaiue : 4.0405 N-m (M6) Note : #2 Recommendable value : 10.0+1.0N+m (M8) Note : #3 Recommendable value : 1.50+0.2N-m (M4) sere 4, Electrical characteristics (at Tj=25°C unless otherwise specified)

22286 Zero gate voltage ICES

Ga) eee ee ee eT agi2 g voltage i 22535 saturation voltage Zs822 Reverse transfer Cres | | f=1MHz capacitance ) | Turn-on time [ton | | 750 | 1200 [Vec=600V [rp 200- 600 |c+6008 Turn-off time | tort [ | 650 | 1000 |Yor=2b15¥ [oat [100200 pe. 00 Diode forward on VF 3.4 in Aneel Reverse Fecovery tine [tr |_| | #80 [Tres Ts §. Therma] resistance characteristics [nin | typ. | max_| [RinG-o) [F008 fica Thermal resistance FRInG=a) || 1 0.08 Diode —————*d CA eco] Pe Rih(c-f) fin % This is the value which is defined mounting on the additional cooling fin with thermal compound. S [_] g _ Fuji Electric Co,Ltd. 2} MSS5F4851 = 4A H04-004-03

  1. Indicetion on module (E272—)VRM) Sethe; 1MBIGO0PX-140-03 eA 600A doy ETT Lot No, Place of manufucturing(code) . 1, Applicable category GH RSiE) This specification is applied to IGBT modute-named IMBI600PX-140-03 BAMBI, GTS LVa—-)) IMB I600PX—-140-0 3icAtTS, 8. Storage and transportation notes (RH, BMLOEREA) | +The IGBT module should be stored at a standard temperature of 5 to 35 and } humidity of 45 to 75%. BBRAMBELI. (5~35T. 45~75%) | suns + Store modules in a place with few temperature changes in order to avoid >gi concensation on the module surface. | PETE! BRRBRBLORECE, (EP a-VREMBBLAVT SE) | fe ag + Avoid exposure to corrosive gases end dust. | eeeée BREAAZOREBM, BROS MEMLETSTE. a3 e$é + Avoid excessive external force om the module. | atts MRCHEMPPSRRLIKTRRETSTE. 3g 333 + Store modules with unprocessed terminals. ; Bas83 EVa—-MWORFARMILORETRETS CE. B28: Do not drop or otherwise shock the modules when transporting. Bags NAORMSCMBESALD, SFAEKVLAWTIE, yess g 6/ EX Fuji Electric Co,Ltd. 2)MS5F4851 aa H04-004-03

Collector current vs. Collector-Emltter voltage Collector current vs. Collector-Emitter voltage Tis 25°C 5 T)=125C 1500 1500 F 5 i i i : , a : i i H 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Collector-Emitter voltage : YCE {VJ Caltector-Emitter voltage : ¥CE [¥) Gate-Ealtter voltage vs. Collector-Emitter voltage Gate-Emitter voltage vs, Colisctor-Ewitter voltage Tisesc Tia125°C 2 12 Fes = : E H Hl = i HW i i 2p2s0 2 i fi A H s ot i i i zasde| $ H ; : i & i i i H 2@lee| = : i i H = i H i i Seca = A i i i 2 H b i A EsELS 3 i i t + 600A = i H H 300K geese = i i 4 £3004 = i i Hy 4 38333 : i i i i : i i fisks 0 5 10 15 20 28 0 5 10 15 20 26

2223 Gate-Emitter voltage: ¥GE OV] Gate-Eaitter voltage: ¥GE (¥]

Switching time vs. Collector current Switching time vs. Collector current Vec=§00¥, RG=2.0Q, VGELISV, T]=25°C Veee600¥, RG=2.00, VGE=t1SV, T]=125°C Ey EEE EIS IEEE ETS a Seite Serres Geers teceee Hee Sepees srneetyceaeee nnaaey Ceeeee Stspat ete a 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 Collector current : te [A} Collector currant ; te [A] - . bf _ Fuji Electric Co.Ltd. A MS5F4851 AG H04-004-03

Switching time vs. Gate-Resistance Dynamic input characteristics Vee=B00V, Ic=600A, VGELISY, T=25°C Ti=28%O : ee oe ere ees en ec eee : H Yees400, 600, 800¥ z sg ae eel g Sai nen memeemeneee ome

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LLL Poob do EG:iit ° i i 4 1 . 10 Ly 1000 2000 3000 4900 Gateresistance : a6 (2) Gate charge > Qe [nc] Foward currrent vs. Foward voltage Reverse recovery characteristies(trr. trr vs. IF) 1800 VGE=0V 1006, Vec=600¥, YGE=+15¥. RG=2, 02 22288]. i ; ; =. Poet oP ob ob ob bf ter 25% see ag = H i A H DE pe eT. tr 125+ e2ssc | = : i i i 52 CL et tr 25°C ga323 | = ; : : ! $s TE bobo PoP Ed bo Ed S3e22) 5 i ; H i .t poop pb bob oP Pb 3 g3Sg ° i i i poppy Poeeeeprreregeneeegeeeeepereesy g2528 0 1 z 3 4 3 i 700 400 300 oo 1000~=~=«200 seis Foward voltage : VE (¥] Foward currrent : 1F [4] 1 1 Reverse biased safty operating area Fansient thereal resistance Tis25~125C, HOESISV, -VGES1EV, RGZ2. 02 3 Sony Aa Sota SEN EY <SOSURIC SORE IS AEA SS hx SOEODR BORE SOR IES CEES? (Ed (non-repetitive pules) ; L PEGE OP ELLE Ob PD DHERY Gepetitive gules) i 1 10 100 1000 0 500 1000 1500 Pulse width : Pw {asec] Coflector-Emitter voltage : ¥CE [¥] ss . Va _ Fuji Electric Co.Ltd. A MS5F4851 Vm H04-004-03

EIT S,€S'SS SSS Switching joss vs. Collector or Foward current Capacitance vs. Collector-Emitter voltage 150 Vec=BO0V, RG=2. 0.0, VGE=+ 15 Tjs25e : RY i i i i 3 3 + - 8 é ‘ iCies z i i i y Eon 125°C S i i i H i i 5 nA oe s PoP EE EG 2 LA 4 H Err. 25°C 3 H i i ? + “Cres s | mn hai a re | 0 200 400 600 800 1000 1200 o 5 10 1S 20 25 40 45 Collector current : te fA} Collector-Emitter voltage : VCE {¥) Foward current : IF [A] 3323 pele gees Bses as235 2BTEes - Egbae 2eces ae 23282 ; 55328 esis 25238 Bass 2833? S2523 e528 fseie By EE Fuji Electric Co.Ltd. MS5F 4851 73 = H04-004-03