1MBI600PX-120-03 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 8
Technical content
Device Name: IGBTModule —tyee Name: IMBIGOOPX=120703 2B? oe bess fede Fuji Electric Co.,Ltd. Matsumoto Factory |Full Electric Cound | : Fuji Electric DRAWN dan. 21-94 I 4 P - z CHECKED! Jaw -22-14 J Tpono 2 ra { dan ae Mla ty 2 MS5F4504 4% = H04-004-07
pow [ts fee [Te [oe [ne fication Content date Approved ew mom] | —— |] — [oltre . Ge leo a BeFinition of solder “ob, -01- 99 ti void under DBCS i py, -of-99 | 7 ls, Feb.-o1 Revision changed ame y Aagaune Fohayasly’ S k 2seas gages ful Fuji Electric Co.Ltd. g¢ MSoris04 Fg — H04-004-06
- Outline Drawing : Unit : om os 486.5 4320.2 2120.2 2930.7 f a ns | | 5 | of ex ce = (RIS a2 , a Q us 4.5 3 24.5 +41 2-M8 HE 2-M4 118 teat Paik 837 « a22: < | ogzil a . Pest *“ = 2: Equivalent circuit . Cc oe G subé { S aT AA 3 1a Fuji Electric Co.,Ltd. z| MSor4504 79 H04-004-03
- Absolute Maximum Ratings (at Tc=25°C unless otherwise specified ) . Cont invous Ic fem) Lie Collector [| Ins Ic pulse A current a Cc | | ims te pulse [200 Wax._pover dissipation [ec] _#100—*|“' Storage temperature c Isolation voltage ¢rms) #4 Iserew torque Note : #1 Recommendable value : 4020.5 .N-m (6) 44:AIl terminals should be Note : #2 Recommendable value : 10.041.0 N-m (M8) connected together when! | Note : #3 Recommendable value : 1,5040.2N-m (M4) isolation test will be | done. PiGi Collector current pS RES current | ; ss ie voltage eysi Collector-Emitter gg 22! saturation voltage 7 | 3? | capacitance Tara-on tine [ton | =" | 750 | 1200 J¥ee=600v - [Turn-off time | tore [=] 650] 1000 oe==18¥ [Tit =f 100300 frs=2. 00 ce eee voltage Reverse recovery time | tr | — | — | a0 isso ss 5. Thermal resistance characteristics [ain | typ. [ max. Ro — | — 00s fer Thermal resistence [RIBG=O | — | — [006 ide x 0.0063 — [the base to cooling veo) P| ee . > This is the value which is defined mounting on the additional cooling fin. with thermal compound. g 4, 2 -aA Fuji Electric Co.,Ltd. z MS5r4504 7% FE H04-004-03
- Indication module (EY 2—JV#eAR) EMast,,. 1B 600PX-120-03 : Lot No. Place of manufucturing(code) 7. Applicable category (iF @UH) This specification is applied to IGBT module named 1MBI600PX-120-03. SMACHE. [GBTEYa—/VIMBI600PX~-120—-03K BATS.
8 Storage and transportation notes (RR, MiP OER BIA)
+ This IGBT module should be stored al a standard temperature of 5 to 35 and humidity of 45°C to 75%. BUREMBELN, + Store modules in a place with few temperature changes in order to avoid a "condensation on the modufe surface. SEe3 MTB ERLORECE, (EV a-NVREMRELBYTL) x2 53s + Avoid exposure to corrosive gases and dust. ° aee8s MMMETRORABM, BROS VMMLBTS OE. 283 ae + Avoid excessive external force on the module. gsi MICE DD SRE DSICTINERTSCE. 22335 + Store modules with unprocessed terminals.
23325 EV a-WOWFARMLORETRETS TE,
Beis + Do not drop or otherwise shock the moduJes when transporting. S353 ML OMMIICGRESALO. BRECK NLENCE, £0s35 gi 9. Specification of solder void. (REA KOR) ee “Under chips. (Fy FF) + S8% (WF) egs22 + Under DBCs of chip area. (Fy 7H FOMPAODBC EF) : S10% (10%LAF) Under DBCs sheep ehipceiey, Fo FETA RRA T) > S10% = (LO¥LAF) 10. Specification of Soldering. - Vacuum soldering. Fuji Electric Co,Ltd. sg) MS5r4504 Ye FEI i TJ H04-004-03
Callactor current vs. Collector-€mitter voltage Collector current vs. Collector-Eaitter voltage Py Te 2s TIs128C 1500 1500 1000 fessssccssveieccccssenneeisserscttsserbesssete fea frerrennszeedreceenene 1000 Ln eneeccadeccrssstserederscsesetecedeessssessecpeneglasseglAoecsncssnes 0 i i i i i al f i : H o 1 2 3 4 5 6 f) 1 2 3 4 5 6 Gol lector-Eaitter voltage : YCE [V] Collactor-Enitter voltage : ¥CE [¥] Gate-Enltter voltage vs. Collector-Emitter voltage Gate-Eaitter voltage vs. Coliector-Emitter voltege Tists¢ Tist2s ¢ . it T 12 BREE = i H i A = H H i i FER: g i : : + 500k 2 H i i FEES Ss eee = i Lh 1 anh geet i : i : i i : i gine i) 5 10 18 20 25 0 3 10 18 20 25 Meee) Gate-Enitter voltags : ¥GE IVI Gatetaitter voltae: VGE [¥} 2Es5 Switching time vs, Collector current Switching tise vs, Collector current YeerBOO¥, RG=2.0Q. YGELISY, Ti=25°C Vee6O0¥, RGSZO, VGE=LIS¥, Ti*125°C & SrSeE Sab SaeS SESE DRISTITE HERE ESSE ESSE SOSSTS ESTES SEEEERERE BEES = SS SENSIEI IEEE BEE cueh tase sssstesseseecesctecaee 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 Coliector current : ic [A] Collector current : te [A] g F450 6, AY Fuji Electric Co.,Ltd. 3} MS5F4504 Ye RS H04-004-03
Switching time vs. Gate-Resistance Dynamic input characteristics Vee=600¥, 1c=600A ¥GE+15¥, T)=25°C Ti=28S ° scpocdestedichesnseeeessseneesereenicssefecenderbeedendesbebenneeceeeceend & coseecssssseeesanfesscearesseesssesssfassineeseesseneesed © wii bob i i giiii : i i ‘ 1 wi " i) 1900 2000 3000 “4090 mResi z GaterResistance Gate charge : Qe (nt) Foward currrent vs. Foward voltage Reverse recovery characteristics(trr, [rr vs, IF) VGE=0¥ Yee=600V, VGE=15V, RG=2, 00 1500 1009 : . r > +135) 2 4 H i H H poppe pe ee 25 is LL eat a a al Aaa eee a Caer Time irr: 280 Pueei ; 5 i ; EE COCR N Ep 4 é = = = Q 1 2 i 4 5 o 200 400 600 800 1000 1200 ence Foward voltage : VF [V] Foward currrent ; IF (A) = ESSE Translant tharaal resistance Reverse biased satty operating area Tix26~ 125, #VGE=1S¥, -VCES 15, RGR: 0 1 10 100 1000 e 200 400 600 800 1000 1200 1400 Pulse width : Pw {asec] Collactor-Emltter voltage : ¥CE {¥] Fuji Electric Co.,Ltd. g MS5+ 4504 VA 1 Bi T 04-004-03
Switching loss vs. Collector or Foward current Capacitance vs. Collector~Emitter voltage 180 YecsB00V, RG=2. 02, VGE=+15V Tjs28°C zs i i H H i 3 ~ u a 2 iCies 5 nea ae 5 Poh bE |
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0 200 400 600 800 1000 1200 0 3 10 18 20 rey 30 35 Colfector current : Ic [A] Collector-Emitter voitage : YCE [V] Foward current ; IF [A] . 3528 2a52 2325 as SESE igi etter pia: URES PEESS ji Electri 311 ms5F4504 % FA : Fuji Electric Co.,Ltd. Pa gS Fr i ro H04-004-03