1MBI600NP-060 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

IGBT MODULE ( N series ) nn Features

  • Square RBSOA
  • Low Saturation Voltage
  • Less Total Power Dissipation
  • Improved FWD Characteristic
  • Minimized Internal Stray Inductance
  • Overcurrent Limiting Function (~3 Times Rated Current) nn Applications
  • High Power Switching
  • A.C. Motor Controls
  • D.C. Motor Controls
  • Uninterruptible Power Supply nn Outline Drawing nn Maximum Ratings and Characteristics
  • Absolute Maximum Ratings ( T c =25°C ) Items Symbols Ratings Units Collector-Emitter Voltage V CES 600 V Gate -Emitter Voltage V GES ± 20 V Continuous IC 600 Collector 1ms IC PULSE 1200 Current Continuous -I C 600 1ms -I C PULSE 1200 Max. Power Dissipation P C 2000 W Operating Temperature T j +150 °C Storage Temperature T stg -40 ∼ +125 °C Isolation Voltage A.C. 1min. V is 2500 V Mounting *1 3.5 Screw Torque Terminals *2 4.5 Nm Terminals *3 1.7 Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) *3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
  • Electrical Characteristics ( at T j=25°C ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current ICES V GE =0V V CE =600V 4.0 mA Gate-Emitter Leackage Current IGES V CE =0V V GE = ± 20V 60 µ A Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =600mA 4.5 7.5 V Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =600A 2.8 V Input capacitance C ies V GE =0V 39600 Output capacitance C oes V CE =10V 8800 pF Reverse Transfer capacitance C res f=1MHz 4000 tON V CC =300V 0.6 1.2 tr IC =600A 0.2 0.6 tOFF V GE = ± 15V 0.6 1.0 tf R G =2.7 Ω 0.2 0.35 Diode Forward On-Voltage V F IF =600A V GE =0V 3.0 V Reverse Recovery Time trr IF =600A 300 ns
  • Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units R th(j-c) IGBT 0.063 Thermal Resistance R th(j-c) Diode 0.11 °C/W R th(c-f) With Thermal Compound 0.0125 n Equivalent Circuit Turn-on Time Turn-off Time µ s A

Switching time vs. Collector current V CC =300V, R G =2.7 Ω , V GE ±15V, T j=25°C Switching time : t on , t r, t off , t f [nsec] Collector current : I C [A] 0 1 2 3 4 5 200 400 600 800 1000 1200 1400 10V V GE =20V,15V,12V, Collector-Emitter voltage : V CE [V] Collector current : I C [A] Collector current vs. Collector-Emitter voltage T j=125°C 0 1 2 3 4 5 200 400 600 800 1000 1200 1400 Collector current vs. Collector-Emitter voltage T j=25°C Collector current : I C [A] Collector-Emitter voltage : V CE [V] 10V V GE =20V,15V,12V 0 5 10 15 20 25 Collector-Emitter vs. Gate-Emitter voltage T j=25°C 300A 600A 1200A I C = Collector-Emitter voltage :V CE [V] Gate-Emitter voltage : V GE [V] 0 5 10 15 20 25 Collector-Emitter vs. Gate-Emitter voltage T j=125°C 300A 600A 1200A I C = Collector-Emitter voltage V CE [V] Gate-Emitter voltage : V GE [V] 0 200 400 600 800 1000 100 1000 Switching time vs. Collector current V CC =300V, R G =2.7 Ω , V GE =±15V, T j=125°C t f t r t on t off Switching time : t on , t r, t off , t f [nsec] Collector current : I C [A]

0,001 0,01 0,1 1 0,01 0,1 IGBT Diode Transient thermal resistance Thermal resistance : R th(j-c) [°C/W] Pulse width : PW [sec] 0 500 1000 1500 2000 2500 3000 3500 100 200 300 400 500 400V 300V V CC =200V Dynamic input characteristics T j=25°C Collector-Emitter voltage : V CE [V] Gate charge : Q G [nC] 1 10 100 1000 tf tr toff ton Switching time vs. R G V CC =300V, I C =600A, V GE =±15V, T j=25°C Switching time : t on , t r, t off , t f [nsec] Gate resistance : R G [ Ω ] 0 1 2 3 4 200 400 600 800 1000 1200 1400 T j=125°C 25°C Forward current vs. Forward voltage V GE =OV Forward current : I F [A] Forward voltage : V F [V] 0 200 400 600 800 1000 100 I rr 25°C t rr 25°C t rr 125°C I rr 125°C Reverse recovery characteristics t rr , I rr vs. I F Reverse recovery current : I rr [A] Reverse recovery time : t rr [nsec] Forward current : I F [A] 0 100 200 300 400 500 600 1000 2000 3000 4000 5000 6000 RBSOA (Repetitive pulse) SCSOA (non-repetitive pulse) Reversed biased safe operating area +V GE =15V, -V GE < 15V, T j< 125°C, R G > 2.7 Ω Collector current : I C [A] Collector-Emitter voltage : V CE [V] Gate-Emitter Voltage : V GE [V]

Capacitance vs. Collector-Emitter voltage T j=25°C Capacitance : C ies , C oes , C res [nF] Collector-Emitter Voltage : V CE [V] 0 200 400 600 800 1000 E rr 25°C E rr 125°C Switching loss vs. Collector current V CC =300V, R G =2.7 Ω , V GE =±15V Switching loss : E on , E off , E rr [mJ/cycle] Collector Current : I C [A] E on 25°C E on 125°C E off 25°C E off 125°C Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House

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