1MBI600LN-060 FUJI
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TMBIGOOLN-OGO 600A) Bias POWER MODULE nan IGBT €2a—w WSt76 3% ; Outline Drawings IGBT MODULE non re ah | \\} BSE : Features eee | @RBA4YFLYI High Speed Switching ig 5 ©} fey = Pe @BERH Voltage Drive | INA RA8 | CY YDO YL RES AI ae = 1 Low Inductance Module Structure L 08 2-M4 2-M6 WA : Applications a === pplic ¢ JL =] et —FRGBAT Ys—% Inverter for Motor Drive r e@AC, DC+—#F»%7 AC-DC Servo Drivo Amplifier __VCE(sat) Classfication _ eRRREH Uninterruptible Power Supply OZERS ORRABE Industrial Machines, such as Welding Machines B=meax : Equivalent Circuit Schematic Met & $4 : Maximum Ratings and Characteristics | @#NMXAEHK : Absolute Maximum Ratings | Items Units | ALO9-=lyFMME | Vers | 600 vo | oc e Fob Es y FOE Voes [+20 Vv | ze | | a |_Ims BL 99 ge eo BARE Ww eB ee in {+150 | *C iar ta —__| Tse =40~ +125 co a ®t = g % 1 #€42{fi : Recommendable Value : 2.5~3.5 N-m een 2500 Lv {25~35kef-cm! (M5) Mounting *1 | 3.5 LN-m * 2 #83@{fl : Recommendable oe 3574 ne T |35~ 40kgf-cm| 16) TIT be? Terminal *2/4.5 Nem 3 HEM; Recommendable Value : 13~16 N-m Terminal *3| 1.7 Nem 113~16kgf-cm| (M4) @ MMM : Electrical Characteristics (Tc=25°C) _ltems Symbols_|Testcondition SSS Min. Typ. [Max._[ Units .. : Voe=0V_ Vee=600V_T)=25°C _ [ [4.0 [mA U7 9°28 7 SEER | Nets Voe=0V_Vee=600V_T=125°C ee mA FoRzi yo mmnmme [les [Vee=OV Voe=t2v TT 200 FMT IBLE | Veen [Vece=20V ic=600mA TOV S995 ey 9 OBE | Vee Vv ASE [Cees | Voe=0V [7 [| prs a Coes | Ver=10V re ee RARER Cres | f=1MHz _ | [= en [ten | Vee =300V | 1.0 ? Pa heidi tr 1c=6004 Resitive load 0.8 is . lott | Vor= +15V | re | 1.2 I-V ATM tt Ro=2.72 Inductive load rs | F4t— ABE 1:=600A, Vce=0V | [2.5 Vv Fer Gio} 1F=600A, —di/dt=1800A/us Voe=—10V] | «300 ns © SA94544 ; Thermal Characteristics items Test condition Min. Typ] Max] Units Ringe) IGBT _ IR Rie Diode _ “ciW Rinic=t The base to cooling fin 0.05 | | A-10 OO
1MBI600LN-060(600A) POWER MODULE -—_—_ooo So MSte ea © Characteristics - - Ti=125 1200) Voe=20V 15V12V 1200 Voe=20V 7 12V wv ot TET ot | [EEF A a Ane 2 800 a 800) [ b col We @ 600 i Fe av a) 200) 200 L [ZF LFA 0 2 4 6 8 10 0 2 4 6 8 10 DLIF-Tiy SABE vee (v) LIF Ty IRBE vee (v) AL7IRR-ALIY- Ti y SOMES ALA7IRR-ALAI + Ti y SOME Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage 0 10 rises os + - Z y ; ery z 6 > = 1 | Tt TT mB 4 ton — _ Vee t Ro=2.79
2 TN us) Var=ti5v
°% 5 19 is 20 019 aa 203300 208 $05 — So F—heD Sy ORB Ver (v) L979 Ic (A) Ab99+ Ti ySMRE-F—-b Tl y TAMER AA VF LTB —ALD 9 WR Collector-Emitter Voltage vs. Gate-Emitter Voltage Switching Time vs. Collector Current a Yec=300V " SS 1c=600A Voe=+15V SD - Z Tp Zs z TO z 5. i Moor ia t t (us) Ro=2.79 (us) Voe=+15V T=125T 0.01 01 0 100200300 #0050000 ost 510 30 L279 Ic (A) 7 — b EA Ro (2) AA VF > TRB ALD 9 Bt AA YF TBF — bE Switching Time vs. Collector Current Switching Time vs. Gate Resistance A-11
POWER MODULE 1MBI600LN-060(600A) eee 500 20 1200 <— Ti=25e
1000 Tj=125T =
400 Y a5
a Fa 67 z z 2 b 72 800 -™ 4 i ‘g | z Wy eee +3 [ g Ye oooy w 3 Bx 600 8 —— tov s aw ‘ [es | 5 Ve Vee 100+ AM ) / — 0 % 1 2 3 °F 0 1S 2.0 25 _ RRR BM O60) Be Br? OE ye TAF RIAD BH BRI RLY YAH 4A PEE Dynamic Input Characteristic Forward Voltage of Free Wheeling Diode 500 1000 es ere XN — Wa: Z 500 so 2 NX N a 300 |_| a A 100 S a Se) FT awall te 2 Ic Repetitive pulse Tj= 25°C In 50 - w | h late 1800 /us 10 |. are ee | _ 200 400 600 ' 5 10 50 100 500 MABR —Ir (A) ALO9-Li-y 9 PHWE Vee (Vv) Trey dee be HE REMAM (GEL) Tre beetle Safe Operating Area Os -SSSESah a Li PTT ry . Went | 3 +#Vce=15V a Lb —Voes15V 1% 3 | Rosie Z| __ a | tow) 25 7 100) = (a) 50 a (| "9 Too 200 300 400 500 600 10° 10 10 10° AL IF-LiyFMBE Vee (v) ANAM Pw (s) REMOTE (WNT 7 A) i EE Reverse Biased Safe Operating Area Transient Thermal Resistance A-12