1MBI3600U4D-120 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 °C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 4800 A Tc=80°C 3600 Ic pulse 1ms Tc=25°C 9600 Tc=80°C 7200 -Ic 3600 -Ic pulse 1ms 7200 Collector power dissipation Pc 1 device 18650 W Junction temperature Tj 150 °C Storage temperature Tstg -40 to +125 °C Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 2500 VAC Screw torque Mounting (*2) 5.75 N·mMain Terminals (*2) 10 Sense Terminals (*2) 2.5 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 4800 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 3600mA 5.5 6.5 7.5 V Collector-Emitter saturation voltage VCE (sat) (main terminal) VGE = 15V IC = 3600A VTj=125°C - 2.42 - VCE (sat) (chip) Tj=125°C - 2.10 - Input capacitance Cies VGE = 0V, VCE = 10V, f = 1MHz - 403 - nF Turn-on time ton VCC = 600V, IC = 3600A VGE = ±15V, Tj = 125°C Rgon = 0.6Ω, Rgoff = 0.27Ω - 0.90 - µstr - 0.50 - Turn-off time toff - 0.80 - tf - 0.20 - Forward on voltage VF (main terminal) VGE = 0V IF = 3600A VTj=125°C - 2.07 - VF (chip) Tj=125°C - 1.75 - Reverse recovery time trr IF = 3600A - 0.35 - µs Lead resistance, terminal-chip R lead - 0.089 - mΩ Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.0067 °C/WFWD - - 0.011 Contact thermal resistance (1device) Rth(c-f) with Thermal Compound (*3) - 0.006 - Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.

Characteristics (Representative) VGE=0V, f= 1MHz, Tj= 25°C Tj= 25°C Tj= 125°C, chip Tj=25°C,chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C,chip VGE=+15V,chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) 1000 2000 3000 4000 5000 6000 7000 8000 Collector current : Ic [A]Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 1000 2000 3000 4000 5000 6000 7000 8000 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 1000 2000 3000 4000 5000 6000 7000 8000 Collector-Emitter voltage : VCE [V] Tj=125°CTj=25°C 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Ic=7200A Ic=3600A Ic=1800A 100 1000 0 10 20 30 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [V] Cies Coes Cres 200 400 600 800 1000 0 3000 6000 9000 12000 15000 18000 Gate charge : Qg [ nC ] VGE VCE Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V]

IGBT Modules1MBI3600U4D-120 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=3600A,VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) Vcc=600V, VGE=±15V, Rgon=0.6Ω, Rgoff=0.27Ω, Tj= 125°C Switching time vs. Collector current (typ.) Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=3600A,VGE=±15V, Tj= 125°CVcc=600V, VGE=±15V, Rgon=0.6Ω, Rgoff=0.27Ω, Tj= 125°C ± VGE=15V ,Tj = 125°C / chip 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1000 2000 3000 4000 5000 6000 Switching time : ton, tr, toff, tf [ us ] Switching time : ton, tr, toff, tf [ us ] Collector current : Ic [ A ] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 1 2 3 4 5 6 Gate resistance : Rg [ Ω ] tr tf toff ton 200 400 600 800 0 1000 2000 3000 4000 5000 6000 1000 1200Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] , Forward current : IF [ A ] Eon Eoff Err 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 6 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ Ω ] Eoff Err Eon 1000 2000 3000 4000 5000 6000 7000 8000 0 200 400 600 800 1000 1200 1400 Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ] ton tr toff tf

Forward current vs. Forward on voltage (typ.) chip Vcc=600V, VGE=±15V, Rgon=0.6Ω, Tj=125°C Reverse recovery characteristics (typ.) Transient thermal resistance (max.) 1000 2000 3000 4000 5000 6000 7000 8000 0 1.0 2.0 3.0 4.0 Forward current : IF [ A ] Forward on voltage : VF [ V ] Tj=25°C Tj=125°C 400 800 1200 1600 2000 2400 2800 3200 3600 0 1200 2400 3600 4800 6000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Reverse recovery time : trr [us] Reverse recovery current : Irr [ A ] Forward current : IF [ A ] trr Irr 0.0001 0.0010 0.0100 0.1000 0.001 0.010 0.100 1.000 Thermal resistanse : Rth(j-c) [ °C/W ] Pulse width : Pw [ sec ] FWD IGBT

IGBT Modules1MBI3600U4D-120 Equivalent Circuit Schematic Outline Drawings, mm main emitter main collector C E sense emitter E gate G sense collector C C E C E

1MBI3600U4D-120 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
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