1MBI300HH-120L-50 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at T C=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current IC Continuous TC=25°C 450 A TC=80°C 300 Icp 1ms TC=25°C 900 TC=80°C 600 -IC 75 -IC pluse 1ms 150 Collector Power Dissipation PC 1 device 2090 W Reverse voltage for FWD VR 1200 V Forword current for FWD IF Continuous 300 AIF pulse 1ms 600 Junction temperature Tj +150 °CStorage temperature Tstg -40 to +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 2500 VACbetween thermistor and others (*2) Screw Torque Mounting (*3) - 3.5 NmTerminals (*4) 4.5 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Note *3: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6) Note *4: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)

http://www.fujielectric.com/products/semiconductor/ IGBT Modules Electrical characteristics (at T j= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. IGBT+Inverse Diode Zero gate voltage collector current ICES VCE = 1200V VGE = 0V - - 4.0 mA Gate-Emitter leakage current IGES VCE = 0V VGE=±20V - - 800 nA Gate-Emitter threshold voltage VGE(th) VCE = 20V IC = 300mA 5.7 6.2 6.7 V Collector-Emitter saturation voltage VCE(sat) (terminal) IC = 300A VGE=15V Tj= 25°C - 3.45 3.75 VTj=125°C - 4.35 - VCE(sat) (chip) Tj= 25°C - 3.20 3.50 Tj=125°C - 4.10 - Input capacitance Cies VCE=10V,VGE=0V,f=1MHz - 23 - nF Turn-on time ton VCC = 600V IC = 300A VGE = ±15V RG = 2.1 Ω LS = 20nH - 0.20 0.50 μs tr - 0.10 0.40 tr (i) - 0.30 - Turn-off time toff - 0.30 0.70 tf - 0.05 0.20 Forward on voltage VF (terminal) IF = 75A VGE=0V Tj= 25°C - 1.80 2.30 VTj=125°C - 1.95 - VF (chip) Tj= 25°C - 1.70 2.15 Tj=125°C - 1.85 - FWD Reverse Current IR VCE = 1200V - - 1.0 mA Forward on voltage VF (terminal) IF = 300A VGE=0V Tj= 25°C - 8.30 9.55 VTj=125°C - 4.50 - VF (chip) Tj= 25°C - 7.90 9.15 Tj=125°C - 4.20 - Reverse recovery time trr IF = 300A - - 0.20 μs Lead resistance, terminal-chip (*5) R lead - 0.70 - mΩ Thermistor Resistance R T = 25°C - 5000 - ΩT = 125°C 465 495 520 B value B T = 25/50°C 3305 3375 3450 K Note *5: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance(1device) Rth(j-c) IGBT - - 0.051 °C/WInverse Diode - - 0.460 FWD - - 0.120 Contact Thermal resistance Rth(c-f) with Thermal Compound (*6) - 0.0125 - Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.

http://www.fujielectric.com/products/semiconductor/ 1MBI300HH-120L-50 Characteristics (Representative) 200 400 600 800 0 1 2 3 4 5 6 7 8 200 400 600 800 0 1 2 3 4 5 6 7 8 200 400 600 800 0 1 2 3 4 5 6 7 5 10 15 20 25 0.1 1.0 10.0 100.0 0 10 20 30 0 200 400 600 800 VGE=20V 12V10V Tj=125°CTj=25°C IC=600A IC=300A IC=150A Cies Coes Cres VGEVCE 15V VGE=20V 12V 10V 15V Dynamic Gate charge (typ.) VCC=600V, IC=300A, Tj=25oC Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip Collector-Emitter voltage : VCE [ V ] Collector current : IC [ A ] Collector-Emitter voltage : VCE [ V ] Collector current : IC [A ] Collector-Emitter voltage : VCE [ V ] Collector current : IC [ A ]Capacitance : Cies, Coes, Cres [ nF ] Gate-Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25°C Collector-Emitter voltage : VCE [ V ]

http://www.fujielectric.com/products/semiconductor/ IGBT Modules 100 1000 0 100 200 300 400 100 1000 0 100 200 300 400 100 1000 10000 1 10 100 0 100 200 300 400 100 001011 100 200 300 400 500 600 700 0 400 800 1200 1600 tr tf toff ton tr tf toff ton tr tf toff ton Eoff Err Eon Eoff(25°C) Eon(125°C) Eoff(125°C) Err(25°C) Eon(25°C) Err(125°C) Switching loss vs. Collector current (typ.) VCC=600V, IC=300A, VGE=±15V, Tj=25oC Switching time vs. Gate resistance (typ.) Switching time vs. Collector current (typ.)Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=2.1Ω, Tj=25oC VCC=600V, VGE=±15V, RG=2.1Ω, Tj=125oC VCC=600V, VGE=±15V, RG=2.1Ω +VGE=15V, -VGE <= 15V, RG >= 2.1Ω,Tj <= 125oC Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) VCC=600V, IC=300A, VGE=±15V, Tj=125oC Collector current : IC [ A ] Collector current : IC [ A ] Gate resistance : RG [ Ω ] Collector current : IC [ A ] Gate resistance : RG [ Ω ] Collector-Emitter voltage : VCE [ V ] Collector current : IC [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ]

http://www.fujielectric.com/products/semiconductor/ 1MBI300HH-120L-50 150 300 450 600 0 2 4 6 8 10 100 1000 0 100 200 300 400 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 100 150 200 0 1 2 3 4 0.1 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj=25°CTj=125°C Irr (125°C) Irr (25°C) trr (125°C) trr (25°C) Inverse Diode IGBT FWD Tj=125°CTj=25°C Transient thermal resistance (max.) Reverse recovery characteristics (typ.) VCC=600V, VGE=±15V, RG=2.1Ω Forward on voltage : VF [ V ] Forward current : IF [ A ] Forward current : IF [ A ] Pulse width : Pw [ sec ]Forward on voltage : VF [ V ] Forward current : IF [ A ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]Thermal resistance : Rth (j-c) [ oC/W ] Forward current vs. Forward on voltage for Inverse Diode (typ.) chip Resistance : R [kΩ] Thermistor Temperature characteristic (typ.) Temperature [°C ] Inverse Diode Forward current vs. Forward on voltage (typ.) chip DWFDWF

http://www.fujielectric.com/products/semiconductor/ IGBT Modules Equivalent Circuit Schematic NTC C2E1 T2(E1) T1(G1) Inverse Diode FWD Outline Drawings, mm

http://www.fujielectric.com/products/semiconductor/ 1MBI300HH-120L-50 WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
  • Submarine repeater equipment 7. Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.