1MBI200N-120 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

IGBT MODULE ( N series ) nn Features

  • Square RBSOA
  • Low Saturation Voltage
  • Less Total Power Dissipation
  • Improved FWD Characteristic
  • Minimized Internal Stray Inductance
  • Overcurrent Limiting Function (4~5 Times Rated Current) nn Applications
  • High Power Switching
  • A.C. Motor Controls
  • D.C. Motor Controls
  • Uninterruptible Power Supply nn Outline Drawing nn Maximum Ratings and Characteristics
  • Absolute Maximum Ratings ( T c =25°C ) Items Symbols Ratings Units Collector-Emitter Voltage V CES 1200 V Gate -Emitter Voltage V GES ± 20 V Continuous IC 200 Collector 1ms IC PULSE 400 Current Continuous -I C 200 1ms -I C PULSE 400 Max. Power Dissipation P C 1500 W Operating Temperature T j +150 °C Storage Temperature T stg -40 ∼ +125 °C Isolation Voltage A.C. 1min. V is 2500 V Mounting *1 3.5 Screw Torque Terminals *2 4.5 Nm Terminals *3 1.7 Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) *3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
  • Electrical Characteristics ( at T j=25°C ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current ICES V GE =0V V CE =1200V 4.0 mA Gate-Emitter Leackage Current IGES V CE =0V V GE = ± 20V 60 µ A Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =200mA 4.5 7.5 V Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =200A 3.3 V Input capacitance C ies V GE =0V 32000 Output capacitance C oes V CE =10V 11600 pF Reverse Transfer capacitance C res f=1MHz 10320 tON V CC =600V 0.65 1.2 tr IC =200A 0.25 0.6 tOFF V GE = ± 15V 0.85 1.5 tf R G =4.7 Ω 0.35 0.5 Diode Forward On-Voltage V F IF =200A V GE =0V 3.0 V Reverse Recovery Time trr IF =200A 350 ns
  • Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units R th(j-c) IGBT 0.085 Thermal Resistance R th(j-c) Diode 0.22 °C/W R th(c-f) With Thermal Compound 0.0125 n Equivalent Circuit Turn-on Time Turn-off Time µ s A

Switching time vs. Collector current V CC =600V, R G =4.7 Ω , V GE =±15V, T j=25°C Switching time : t on , t r , t off , t f [nsec] Collector current : I C [A] 0 1 2 3 4 5 100 200 300 400 500 V GE = 20V, 15V, 12V, 10V, Collector-Emitter voltage : V CE [V] Collector current : I C [A] Collector current vs. Collector-Emitter voltage T j=125°C 0 1 2 3 4 5 100 200 300 400 500 Collector current vs. Collector-Emitter voltage T j=25°C Collector current : I C [A] Collector-Emitter voltage : V CE [V] V GE = 20V, 15V, 12V, 10V 0 5 10 15 20 25 100A 200A 400A Collector-Emitter vs. Gate-Emitter voltage T j=25°C I C = Collector-Emitter voltage : V CE [V] Gate-Emitter voltage : V GE [V] 0 5 10 15 20 25 Collector-Emitter vs. Gate-Emitter voltage T j=125°C 100A 200A 400A I C = Collector-Emitter voltage : V CE [V] Gate-Emitter voltage : V GE [V] 0 100 200 300 400 100 1000 Switching time vs. Collector current V CC =600V, R G =4.7 Ω , V GE =±15V, T j=125°C t f t r t on t off Switching time : t on , t r , t off , t f [nsec] Collector current : I C [A]

0,001 0,01 0,1 1 0,001 0,01 0,1 IGBT Diode Transient thermal resistance Thermal resistance : R th(j-c) [°C/W] Pulse width : PW [sec] 0 500 1000 1500 2000 2500 200 400 600 800 1000 800V 600V V CC =400V Dynamic input characteristics T j=25°C Collector-Emitter voltage : V CE [V] Gate charge : Q G [nC] 100 1000 t f t r t off t on Switching time vs. R G V CC =600V, I C =200A, V GE =±15V, T j=25°C Switching time : t on , t r , t off , t f [nsec] Gate resistance : R G [ Ω ] 0 1 2 3 4 5 100 200 300 400 500 T j=125°C 25°C Forward current vs. Forward voltage V GE =OV Forward current : I F [A] Forward voltage : V F [V] 0 100 200 300 400 100 I rr 25°C t rr 25°C t rr 125°C I rr 125°C Reverse recovery characteristics t rr , I rr vs. I F Reverse recovery current : I rr [A] Reverse recovery time : t rr [nsec] Forward current : I F [A] 0 200 400 600 800 1000 1200 400 800 1200 1600 2000 RBSOA (Repetitive pulse) SCSOA (non-repetitive pulse) Reversed biased safe operating area +V GE =15V, -V GE < 15V, T j< 125°C, R G > 4.7 Ω Collector current : I C [A] Collector-Emitter voltage : V CE [V]

Capacitance vs. Collector-Emitter voltage T j=25°C Capacitance : C ies , C oes , C res [nF] Collector-Emitter Voltage : V CE [V] 0 100 200 300 400 E rr 25°C E rr 125°C Switching loss vs. Collector current V CC =600V, R G =4.7 Ω , V GE =±15V Switching loss : E on ,E off ,E rr [mJ/cycle] Collector Current : I C [A] E on 25°C E on 125°C E off 25°C E off 125°C Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House

2 Chalkhill Road Hammersmith

D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30 Fax.: 069 - 66 90 29 - 56 Fax.: 0181 - 233 11 60 Specification is subject to change without notice May 97