1MBI1200U4C-170 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 °C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 1600 A Tc=80°C 1200 Ic pulse 1ms Tc=25°C 3200 Tc=80°C 2400 -Ic 1200 -Ic pulse 1ms 2400 Collector power dissipation Pc 1 device 7350 W Junction temperature Tj 150 °C Storage temperature Tstg -40 to +125 °C Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 3400 VAC Screw torque Mounting (*2) 5.75 N·mMain Terminals (*2) 10 Sense Terminals (*2) 2.5 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 2400 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 1200mA 5.5 6.5 7.5 V Collector-Emitter saturation voltage VCE (sat) (main terminal) VGE = 15V IC = 1200A VTj=125°C - 2.83 - VCE (sat) (chip) Tj=125°C - 2.65 - Input capacitance Cies VGE = 0V, VCE = 10V, f = 1MHz - 112 - nF Turn-on time ton VCC = 900V, IC = 1200A VGE = ±15V, Tj = 125°C Rgon = 3.9Ω, Rgoff = 1.5Ω - 1.80 - µstr - 0.85 - Turn-off time toff - 1.30 - tf - 0.35 - Forward on voltage VF (main terminal) VGE = 0V IF = 1200A VTj=125°C - 2.18 - VF (chip) Tj=125°C - 2.00 - Reverse recovery time trr IF = 1200A - 0.35 - µs Lead resistance, terminal-chip (*3) R lead - 0.146 - mΩ Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.017 °C/WFWD - - 0.030 Contact thermal resistance (1device) Rth(c-f) with Thermal Compound (*4) - 0.006 - Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

Characteristics (Representative) Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C ,chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip Tj= 125°C, chip Tj=25°C ,chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Tj= 25°C 400 800 1200 1600 2000 2400 2800 Collector current : Ic [A]Collector current : Ic [A] Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 400 800 1200 1600 2000 2400 2800 Collector-Emitter voltage : VCE [V] VGE=20V15V 12V 10V 400 800 1200 1600 2000 2400 2800 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Tj=125°CTj=25°C 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Ic=2400A Ic=1200A Ic=600A 100 1000 0 10 20 30 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [V] Cies Coes Cres 200 400 600 800 1000 0 1000 2000 3000 4000 5000 Gate charge : Qg [ nC ] VGEVCE Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V]

IGBT Modules1MBI1200U4C-170 Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=1200A,VGE=±15V, Tj= 125°CVcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj= 125°C Switching time vs. Collector current (typ.) Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=1200A,VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) Vcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj= 125°C Switching loss vs. Collector current (typ.) ± VGE=15V ,Tj = 125°C / chip 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 400 800 1200 1600 2000 Switching time : ton, tr, toff, tf [ us ] Switching time : ton, tr, toff, tf [ us ] Collector current : Ic [ A ] ton toff tr tf 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 2 4 6 8 10 12 14 16 18 Gate resistance : Rg [ Ω ] tr tf toff ton 100 200 300 400 500 600 700 800 0 400 800 1200 1600 2000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] , Forward current : IF [ A ] Eon Eoff Err 200 400 600 800 1000 1200 1400 0 2 4 6 8 10 12 14 16 18 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ Ω ] Eoff Err Eon 400 800 1200 1600 2000 2400 2800 0 400 800 1200 1600 2000 Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ]

Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=900V, VGE=±15V, Rgon=3.9Ω, Tj=125°C Transient thermal resistance (max.) 400 800 1200 1600 2000 2400 2800 Forward current : IF [ A ] Forward on voltage : VF [ V ] Tj=25°C Tj=125°C 200 400 600 800 1000 1200 1400 1600 0 400 800 1200 1600 2000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Reverse recovery time : trr [us] Reverse recovery current : Irr [ A ] Forward current : IF [ A ] trr Irr 0.0001 0.0010 0.0100 0.1000 0.001 0.010 0.100 1.000 Thermal resistanse : Rth(j-c) [ °C/W ] Pulse width : Pw [ sec ] FWD IGBT

IGBT Modules1MBI1200U4C-170 Equivalent Circuit Schematic Outline Drawings, mm main emitter main collector C E sense emitter E gate G sense collector C C E

1MBI1200U4C-170 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
  • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.