1MBI100U4F-120L-50 FUJI
Document overview
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Technical content
Features
Low Inductance module structure
Applications
Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 °C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 150 A Tc=80°C 100 Ic pulse 1ms Tc=25°C 300 Tc=80°C 200 -Ic 50 -Ic pulse 1ms 100 Collector power dissipation Pc 1 device 540 W Reverse voltage for FWD VR 1200 V Forword current for FWD IF Continuous 150 AIF pulse 1ms 300 Junction temperature Tj +150 °C Storage temperature Tstg -40~+125 °C Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 2500 VAC Screw torque Mounting (*2) - 3.5 NmTerminals (*3) Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
http://www.fujielectric.com/products/semiconductor/ IGBT Modules Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 200 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 100mA 4.5 6.5 8.5 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 100A VTj=125°C - 2.25 - VCE (sat) (chip) Tj=125°C - 2.10 - Input capacitance Cies VGE = 0V, VCE = 10V, f = 1MHz - 11 - nF Turn-on time ton VCC = 600V, IC = 100A VGE = ±15V, RG = 5.6Ω - 0.32 1.20 µs tr - 0.10 0.60 tr(i) - 0.03 - Turn-off time toff - 0.41 1.00 tf - 0.07 0.30 Forward on voltage VF (terminal) VGE = 0V IF = 50A VTj=125°C - 1.80 - VF (chip) Tj=125°C - 1.70 - Reverse Current IR VCE = 1200V - - 1.0 mA Forward on voltage VF (terminal) VGE = 0V IF = 150A VTj=125°C - 2.00 - VF (chip) Tj=125°C - 1.75 - Reverse recovery time trr IF = 150A - - 0.35 µs Lead resistance, terminal-chip(*4) R lead - 1.39 - mΩ Note *4: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.23 °C/WInverse Diode - - 0.73 FWD - - 0.28 Contact thermal resistance Rth(c-f) with Thermal Compound (*5) - 0.05 - Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
http://www.fujielectric.com/products/semiconductor/ 1MBI100U4F-120L-50 Characteristics (Representative) Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj=25oC Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip 100 150 200 250 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V ] Collector current : Ic [ A ] 100 150 200 250 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] Collector current : Ic [A ] 100 150 200 250 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] Collector current : Ic [ A ]Capacitance : Cies, Coes, Cres [ nF ] 5 10 15 20 25 Gate-Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [ V ] 200 400 600 Gate charge : Qg [ nC ] VGE=20V VGE=20V15V 15V12V 12V 10V 10V Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] VGE VCE Ic=200A Ic=100A Ic=50A Tj=125oCTj=25oC Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25°C 0.1 1.0 10.0 100.0 0 10 20 30 Collector-Emitter voltage : VCE [ V ] Cies Cres Coes
http://www.fujielectric.com/products/semiconductor/ IGBT Modules Switching loss vs. Collector current (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj=25oC Switching time vs. Gate resistance (typ.) Switching time vs. Collector current (typ.)Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=5.6Ω, Tj=25oC Vcc=600V, VGE=±15V, RG=5.6Ω, Tj=125oC Vcc=600V, VGE=±15V, RG=5.6Ω +VGE=15V, -VGE <= 15V, RG >= 5.6Ω,Tj <= 125oC Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=600V, Ic=100A, VGE=±15V, Tj=125oC 100 1000 10000 0 50 100 150 200 Collector current : Ic [ A ] 100 1000 10000 0 50 100 150 200 Collector current : Ic [ A ] 100 1000 10000 1 10 100 1000 Gate resistance : RG [ Ω ] 0 50 100 150 200 Collector current : Ic [ A ] 1 10 100 1000 Gate resistance : RG [ Ω ] 100 200 300 0 400 800 1200 1600 Collector-Emitter voltage : VCE [ V ] Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton ton tr tr tf tf Eon(125oC) Eon Eoff Err Eoff(125oC) Eoff(25oC) Eon(25oC) Err(125oC) Err(25oC) toff ton tr tf
http://www.fujielectric.com/products/semiconductor/ 1MBI100U4F-120L-50 chip FWD FWD Inverse Diode Transient thermal resistance (max.) Reverse recovery characteristics (typ.)Forward current vs. Forward on voltage (typ.) Vcc=600V, VGE=±15V, RG=5.6Ω Forward current vs. Forward on voltage (typ.) chip 100 200 300 400 0 1 2 3 4 Forward on voltage : VF [ V ] Forward current : IF [ A ] 100 1000 0 50 100 150 200 Forward current : IF [ A ] 0.01 0.10 1.00 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] 100 120 0 1 2 3 4 Forward on voltage : V F [ V ] Forward current : IF [ A ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]Thermal resistance : Rth (j-c) [ oC/W ] Inverse DiodeTj=25oC Tj=125oC Tj=25oC Tj=125oC Irr(25oC) trr(125oC) Irr(125oC) trr(25oC) FWD IGBT
http://www.fujielectric.com/products/semiconductor/ IGBT Modules Outline Drawings, mm Equivalent Circuit Schematic 3-M5 2-Ø6.5 2.7max. C1E2 C2E1 G2 23 23 17 4422.3 8 0.5
http://www.fujielectric.com/products/semiconductor/ 1MBI100U4F-120L-50 WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.
- Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
- Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
- Transportation equipment (mounted on cars and ships) • Trunk communications equipment
- Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
- Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
- Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
- Space equipment • Aeronautic equipment • Nuclear control equipment
- Submarine repeater equipment 7. Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.