1MBH75D-060S

1MBH75D-060S FUJI

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. —Device Name GBT —tIvpe Name: IMBH75D-060S —Spec. Nos MSF 4623 soe Date :__June-21-1999 Pgiss eee Fuji Electric Co.,Ltd. Matsumoto Factory > DATE NAME . ‘| Fuji Electric Co.,Ltd. i , veel 2/9117 ose : == Tye | MS5F 4623 13 4 Lo hese Al HO4-004-05

Ratings and characteristics of Fuji IGBT IMBHY7YS5D—-oao605 1, Outline Drawing 2, Equivalent circuit * C:Col lector 20.5mex ey 5403 a | Ra 3 y) | [e) S03 ; 3| | » | 1 =e | { [7 g G:Gate a | 3] *) ca | /\\ Fw | . —|* SS Ss 3202/4 Jl ii | fH HE # | 240.2 a 4 i 240.2 ‘| q i ql | fe) ws02 i OF OF | oe E:Emitter | 5.45202 | | | 5.45202 | | ss03 “pee-so.oze \\ SE a CONNECTION — | Q cate , e COLLECTOR ® @ fo) EMITTER : 3,_Absolute maximum ratings ( Tc=25°C_) Items Symbols | Ratings | Units Col lector-Emitter Voltage Ves | 600 Gate-Emitter Voltage | Voes | +30 | Te=25C) tees 82 Dc t Collector Current | | Te=100°C | Icr00 | 75 A tms | Te=25 °C) ep 225 | OA IGBT Max, Power Dissipation Pe | 310 Ww FHD Max. Power Dissipation Pc | 180 Ww Operating Temperature Tj | + 150 °c SUUEEEPTEEEEP EERIE EEE ee Storage Temperature | Tstg -40 ~ +150 | c Mounting Screw Torque | — 70 N «cm . . a i HO4-004-03

Characteristics | Items Symbols ——— Conditions | Unit Zero gate voltage Ices } — | — | 1.0 | Voce = OV mA Collector Current | | Vee = 600V Gate-Enitter tees | | 10 | Vee = Ov | uA leakage Current | | | Vor = +30V Gate-Enitter | Vor cen 4.0 | 5.0 | 6.0 | Vce = 20V v Threshold Voltage | | Ie = 75mA Col lector-Enitter Veewats | —— | 24) 29 | Vee = 15V v . Saturation Voltage | | Ic = 75A | Input capacitance Cies | — 3700 | —— | Vee = OV Output capacitance | Coes | — | 30 | —— | Vee = 25V pF Reverse transfer Cres = —— 190 — | =I capacitance | | time L, > Ic = 754 Switching | trea | — | 0.03 | — | Galt Bridge) | Time rT (us | Turn-off off =| —— 0.50 | 0.62 | | time HH Inductance Load | | Turn-on ton % — | 0.15 | — | Vec = 300V | time + — Ic = 75A | Re = 6.02 trr2 — | 0.03 | — | (Half Bridge) | | time Inductance Load FHD forward voltae =| WF «=| —— | 2.0 ivr | IFS75A, VGE=OV Reverse recovery time ~ | trr — | 0.06 0.10 IF=75A, VGE=-10V | us | | VR=300V, | | | dv/dt=100A/us |

3 Turn-on characteristics iclude trr2, Seee figure,A in next page,

Fuji Electric Co.,Ltd. 2) MS5F4623 3/13 P _ H04-004-03

5, Thermal resistance characteristics | | Characteristics Items | Symbols bo | Conditions Unit | min, | typ. | max, | Thermal resistance r— | °c/M 6, Switching waveform VGE Waveform / \\ / iN pau | | hes! tere ZA Ne 1 | | (le:70% Recovery) VCE Haveform \\ \\ } i ot VG ' \\ 1 I Ses! tf es | tr(ler10% ~VCE:10%) toff(VGE:90%~ 1c: 10%) ton (VGE:10%~VCE:10%) oo 5 Ee Fuji Electric Co.,Ltd. i MS5F4623 4n3) eT Pu i] H04-004-03

Collector Current vs. Collector-Emitter Voltage Tj=25° 160 i i | a i eee ~ fone fon ns VGE=15V, 12V, 10V Speefoseefovef on] = 140 2 ES va ope fen fon fff nl

120 BEE EEE eA: eee

pees 20 “fondo fochorh Se eke a ee ee ftirs 0 1 2 3 4 5 oer Collector-Emitter Voltage : VCE(V) firis Collector Gurrent vs. Collector-Emitter Voltage gisat Tj=125% teins 160 Fert i Voe=tov,t2v,10v to eotse 140 OO eee eee eo oo

120 ER Rt

° Clie see 0 1 2 3 4 5 Collector-Emitter Voltage -: VCE(V) EE Fuji Electric Co.,Ltd. NSSF 4623 8/18 FS a H04-004-06

Collector-Emitter Voltage vs Gate-Emitter Voltage Tj=25°C EERE EERE 10 + aa H TLL _ ee fod pt ¢ g.CvoCe ee Tee eee . - pact | bo poy { aan % 5 Ct mer Pi iii [ S TT int i ra tod ii foil toi i B 4h ror & aaa Pe PL bes L a LEEEEEe Ve 150A 8 sCCEre KS 4 {tty en 2428 () paee: 0 5 10 15 20 2:35 Gate-Emitter Voltage : VGE [V] difz3 Collector-Emitter Voltage vs Gate-Emitter Voltage we etg Tj=125°C seek eee se 053 _ a ||. . HERE HH Cg tt i snd eed 3 ee J TTT > ldo fle 1 vdeo fonp | . 5 “cee ae Boapoo kp Creer pad Sammn J bee 5 [cee tN NEE [aT 150A S a ~~ |

8 BRR REE RRSP EES SSE op

) Cee co 0 5 10 15 20 Gate-Emitter Voltage : VGE [V] Fuji Electric Co.,Ltd. ie NSSF 4623 6/13 E+ HO4-004-03

Switching time vs Collector current Vec=300V, RG=6 2, VGE=+15V, Tj=125°C o o Cc ~~ 1000 N rad cesec eee deneteeeee eee teens wef oveveceesectecsccie.| toff Fs) fe} 3. ” ton % 6 100 : Bo tr 1 tenes fone te — Oo g.. n cane 0 50 100 150 200 oii Collector current : Ic(A) Piss Switching time vs Collector current fii: Vec=300V, RG=24Q2, VGE=+15V, T j=125°C Oo — 1000 N 5 i 5 | ton ~S 100 tr wo 7 | trr2 ce — Bs oO n ie} 50 100 150 200 Collector current : Ic(A) 7 ; 2 EA Fuji Electric Co.,Ltd. :| HS5E 4623 Ws Cel HO4-004-03

Vee=300V, Ic=75A, VGE=+15V, Tj=125°C ° toff 3 : a Cc ~ 1000 — 5 ton Ps) ae EE tol I : rv oO Sepcetecalleconats chcactpentgestb atop cain a ce } Oo Oy? = | Zese ° gd: 10 Para (7) 10° 20 30 40 50 60 70 80 thie Gate resistance : RG(Q) ares i Veo=300V, 1o=75A, VGE=+15V, Tj=125°C z7gi8 eeiet 8 toff ea 1000 = it | Ba 100 tr p aw. . : ce oO = i n ie} 10 20 30 40 50 60 70 80 Gate resistance : RG(Q) Zz a Fuji Electric Co.,Ltd. =| uSSF 4623 8/13 +} Es a HO4-004-03

S Dynamic input characteristics a wo. Tj=25 05 u © 500 Y oO > WA ge bd yy © ao 400 20 + Vi = ° Yi had ‘ Via : 5 300 # 15 7 .& Y 2 in 200 | fe 10 JE Faas 9) RAE” : Oo ! o o on = © sees = 100 5 og fexd ° \\ fyi: \\ a) 0 Tinthereetebeobeebeetet 9 oer 0 10 20 30 40 50 60 70 80 90 100110120130 140150 PPEis Gate charge : Qg (nQ) esr Capacitance vs. Collector-Emitter Voltage Baise Tj=25°C ppeet eee 108 “| RSS Ss Pn oO ca Si : SS 2 : . [oy ee Coes “ Cres o 0.1 c a s oO a o 0.01 0 5 10 15 20 25 30 35 Collector-Emitter Voltage = VCE(V) Fuji Electric Co.,Ltd. A WS5E 4623 9/13 HO4-004-03

Reverse Biased Safe Operating Area RG=6 Q, +VGES30V, -VGE=15V, Tj$125°C 1000 2 a ‘SO Non-repetitive pulse area & 100 Lc ° Repetitive pulse area ; | 2 . Oo sere ° gis! 10 2s rE 10 100 1000 Piiad Col lector-Emitter voltage : VCE (V) _ getta 1MBH75D-060S gpect Forward Bias Safe Operating Area ee 1000 casts i S & 2 100 AN Ns, - fy Ny » % So 5 s : xe 5 . , 6 10 IN : i Condition

2 Te=25°C

: JL : N\\ EE Ee ee 1 10 100 1000 Collector-Emitter Voltage : VCE (V) 7 ; EA Fuji Electric Co.,Ltd. MS5F 4623 10/13 74 a HO4-004-03

Reverse recovery time vs. Forward current VR=300V, -di/dt=100A/ u sec ® COT TTT TT PEE SERRE Pe oe ee) ee ~ Be ee aS ese ee oe Ae _ a SUR BES ee oe or eee Fs Pe oe on ee ee OR a a= ee 2] ce Jo See g tt cess 2 ily HEE HEE Pest pI SERRE Baty oL tL ETT PE Tyr rrr yr ry TT suis 0 50 100 150 200 fiyis Forward current : IF [A] — 5: fe Reverse recovery current vs. Forward current fire VR=300V, ~di/dt=100A/ u sec vail ® COO aati SORE ESR RE Reese piedd ee oe ise: ce weee® ee ee ee SERRE oe oe 5 Pt a) oe

8 TTT TPP Pee eee

Base ae oe J oe oe eee a, oe 3 pc a See a PTT eee oLiL iii Pry yyy ry rr rrr yy 0 50 100 150 200 Forward current : IF [A]

2 EE]

Fut Etectic Contd, dE) eras wa =e Ho4~-004-03,

Forward Voltage vs. Forward current 160 ed a ub 140 4 “120 EH t o° 100 S ¢0 = 60 Sait 20 eee 0 1 2 3 4 5 eee Forward Voltage : VF(V) Fries Reverse recovery chracteristics vs. -di/dt fof0i VR=300V, IF=75A, Tj=125°C Toes 500 50 825k “_s a ee ee ee ee oe Ft} oe EF fa pt 7 = See) A A 7 | 8 eg fee a a : 2 a0 PO a ee | 202 3 a | Z| of a £ 7, A

2 A P|

5 100 Le "=n 2

3 Sy, A ER Dr nn ee 2

. SSeS pes a A ob "7, 0 500 1000 -di/dt [A/ usec] EH Fuji Electric Co.,Ltd. WS5F 4623 12/13 a H04-004-03

Transient thermal resistance tt i Oks

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2 Serres me Sassi esse ee

9° cI a 8 FEHR eth 2 fi ieee oo i : E ee eed 2 a LL ee CTT 2 eer me meseit BEE tri = eC He it lg poe amet ane A - ail A Al ait 10° 10° 40” 10" 10° LT Pulse width : Pw [sec] HO4-004-03