1MBH50D-060S FUJI
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C TENTATIVE ). Device Name ‘ 1GBT . Type Name :___1MBH50D-060S . Spec. No. :__MS5F 4622 . Ping Date 1 June-21-1999 . 2iboy Eugtvi sozib Bg3sk teint . stazt eGf52 Fuji Electric Co.,Ltd. Matsumoto Factory DATE NAME — [APPROVED ; : [oate [awe _Terraoven | Fuji Electric Co.,Ltd. preety 1 Hose | 2] yssr sano ws ES 5 [Ty ee ee 7872 ok
Ratings and characteristics of Fuji IGBT ee ea I1IMBHS50D—a60S OT 1, Outline Drawing 2. Equivalent circuit C:Col lector 20.5max n 520.3 Ry,
8 G:Gate
) Of] a) & ol FHD 4 — ) zeoz Ff Hf 2s02 ho fl 5.45402 | 5.45202 3203 pre-souoen \\ CONNECTION @® Gate See @ co.vector OOo @ EMITTER 3,_Absolute maximum ratings ( Tc=25°C_) Collector-Emitter Voltage Vees 600 Vv Gate-Emitter Voltage +30 Vv Collector Current | | te=t0rc | tee | || fe few! te "9 IGBT Hax. Power Dissipation Pc 230 FWD Hax, Power Dissipation Po 150 . Operating Temperature Tj + 150 °c Storage Temperature Tstg -40 ~ +150 °C Mounting Screw Torque — 70 N «cm [|] 5 = Fuji Electric Co.,Ltd. 2 MS5F4622 ang H04-004-03
Items Symbols Conditions Unit Zero gate voltage lees — Voe = OV Collector Current Vee = 600V Gate-Emitter lees — 10 | Vce = OV wa leakage Current Voe = £30V Gate-Emitter Voe cond Vce = 20V Vv Threshold Voltage Ic = 50mA Col lector-Emitter Vee sat» Vor = 15V Vv Saturation Voltage Ic = 50A Qutput capacitance | oes | — | 240 Vee = 25V pF Reverse transfer Cres 130 f = 1MHz capacitance Turn-on ton X | —— | os | —— | Vee = 300V time Ic = 50A Ra = 33 Q Suitehin w2 | | 0. | — | ttt bisee time Inductance Load Turn-on 0.15 | —— | Vcc = 300V time Ic = 50A Sn ee Ge Ra = 8.02 trr2 — | 0,03 (Half Bridge) time —— Inductance Load tf 0.10 | 0.17 FHD forward voltage 2.0 2.5 IF=50A, VGE=0V Reverse recovery time trr —— | 0.60 | 0.10 | IF=50A, VGE=-10V | us VR=300V, dv/dt=100A/ 21s 3 Turn-on characteristics iclude trr2, Seee figure.A in next page, Fuji Electric Co,Ltd. MS5F4622 3/13 ae : HO4-004-03
- Thermal resistance characteristics Characteristics Items Conditions Unit Thermal resistance - °C/M [fon |e 6. Switching waveform ' a VGE Waveform I “4 \\t | tf | (e:30% Recovery) Ic Waveform < | | eto ee ry tot tf i it tt I : i oaft rt H i oift to H VCE Waveform ' yt ' ! ' I H ‘le! tf "te > | tr(le:10% ~V0E:10%) tof f(VGE390%~ Ie: 10%) ‘ton (VGE: 10%~VCE = 10%) Fuji Electric Co,Ltd. : MS5F4622 4/13 EE a ~ HO4-004-03
Collector Current vs. Collector-Emitter Voltage Tj=25e Se 100 Rete yiqo. popper - fo fevefecdeneenduenfemdueubeesperebandera fed faintecctenfenet VGESBV dnd £ “t “pp + inne + “fs f t j i | + to ‘ | fo ‘ ‘ 8 yy Loceckeeteyyherbrrrebreeb ze Pea ee ee eee eee ule fevefeeebnfen 4 sinfeeefesefene fe aseafeesedneneeeefnefeneicnfeeef nee sE3e Cee Cee eELeeee eet faze fen nefen ne [oer ia? ° ss aeee ° ' 2 $ ‘ ° rifle Collector-Emitter Voltage : VCE(V) saE23 freee Collector Current vs. Collector-Emitter Voltage Euiat Tj=125°C zentt cieebebefopebebebefe VGE=15V, 12V, 100 fa feofodtad
80 Po eo
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20 PEt an A ood ete cen ee
Collector-Emitter Voltage : VCE(V) Tt Fuji Electric Co.,Ltd. H useF 4622 6/13 [1 HO4-004-06
Collector-Emitter Voltage vs Gate-Emitter Voltage Tj=25°C Sooo 10 cee EER EEAEA a AAA | i To oo im S eff tet td _ HERE FH fd ale +4 v a i £ 4h | ii een Peery noun 2 : aan im & HEEEEEHREREEEEEEEEEE B BEEEEEERS PEE ee ECE tm s opty KA EEE He & ? RRR == tats = Corr CoCr rine Test, 0 5 10 15 20 siisz Gate-Emitter Voltage : vGE [V] PEeisge 228i ~ 5283 Collector-Emitter Voltage vs Gate-Emitter Voltage peel Tj=125°C Suse oo a i — Betty s be HSE ere oH Paes ac | Py ft} ee “ { mien OO tf i ® ,Coce HEE] C4 8 tT a 2 = gael I =e H- i uw oe oe | ee i 100A
5 Cerr Ceres
6 Cem ESS E500
3 COE sa
38 CoE EE i
Gate-Emitter Voltage : VGE [V] Fuji Electric Co.,Ltd. | NSSF 4622 6/13 Ee
Switching time vs Collector current Vec=300V, RG=8 Q, VGE=+15V, Tj=125°C : oS 3 po 2 1000 : : : y : bo clienbeececeb cy Seer en ae na ee toff . Pr) vv ton _ Bu 100-—— — — =e SS : : v2 tr Se tp ap an ce : L 5 . i Baie 3 Past baie 10 Hel 0 50 100 sisi: Collector current : Ic(A) EPRaY Switching time vs Collector current 32 i Vec=300V, RG=33 2, VGE=++ 15V, T j=125°C ees EefE8 nn 7 al tesnetigic copii penn Sorin “toff - c 5 . c i ° . aa oe atiteteebeseevcensetesee eset ton —&4% 100 tr 2S : LSE ES EEE tere wo * a : ce us awd [sy na (e) 50 100 Collector current : Ic(A) Fuji Electric Co.,Ltd. MS5F 4622 1/13 = HO4—004-02
Vec=300V, 1c=50A, VGE=+15V, T j=125°C c ton £ 2 Io tr Po CE L wo — trr2 ce =? i £.. 3327 a Zest bei: 0 3a ge 0 10 20 30 40 50 60 70 80 90 100 cits Gate resistance : RG(Q) PPEa Switching time vs RG iyi i Vec=300V, 1c=50A, VGE=15V, T j=125°C 3ogtz pases _ : 3 toff 3S setae bo. ce ce} nm ie) 10 20 30 40 50 60 70 80 90 100 Gate resistance : RG(Q) Fuji Electric Co.,Ltd. =| MSSF 4622 8/13 EA
= Dynamic input characteristics io w Tj=25° os 5 ' A. ina VY o @w 400 20 bo “ Y ‘
5 V, v
= oe = Pe) ni 200 J 10 (E ee a on a i © © : 3 — 100 M 5 oo ByER 2 zyse ° aoe Sanus Denes Bones Bobus Buses beens Seeee Senne eee °o 10 20 380 40 50 60 70 80 00 100 EER: Gate charge : Qg (na) itis Capacitance vs. Col lector-Emitter Voltage ere Tj=25°C Beis Bint : || oO : 1 PS : s = nod Coes 1 ples if 2 ed ¢ : s o a Cy oO 0.01 ie} 5 10 15 20 25 30 35 Collector-Emitter Voltage : VCE(V) [ TI Fuji Electric Co.,Ltd. =| MSF 4622 9/13 4 HO4-004-03
Reverse Biased Safe Operating Area RG=8.Q, +VGESX30V, -VGE=15V, T jS125°C Ss € 100 L Do 2 + Pe] oO 8 jo 38 i fais 10 rise 10 100 1000 it Py Collector-Emitter voltage : VCE(V) s3ieg — sit 1MBH50D-0608 ers Forward Bias Safe Operating Area area 1000 - SEete SOE EEE ESEE2 ~ 2 54 r a <5 Ty € So 5 «10 7 2) a. $ Condition = 1 pulse "EP SL Biot ee ea 1 10 100 1000 Collector-Emitter Voltage : VCE (V) Fuji Electric Co.,Ltd. USSF 4622 10/13|-- HO4-004-03
Reverse recovery time vs. Forward current VR=300V, -di/dt=100A/ u sec 200 EEEA-EEE-EEHE-LH Pj ff || I | q-H Ie HERE EEE 5 so a Pf : FYE EE} eS SERRE EH 2 400 REE EEE EEE E44] B EREEEE EEE EHH g PoP er 8 = eee | J . 50 SSE ra }+$+j~~ Pr va{ 2 ERERRERERREEH eae 2 rib ly 0 50 100 iiily Forward current : IF [A] ~ #23 Reverse recovery current vs. Forward current aeite VR=300V, -di/dt=100A/ u sec sogih 20 a FEEEEEEEEPEER wet Pry tr ree er ELT] fT | Py PT Try ry a © foo = 40 ee 3 rt++++++ ++ tt tt PB EEEREEEEEEEE : EH ~ oP Tf a P FRRRRRSRE CEH é | | oP REE EEF -E4 Ltr Pr 0 50 100 Forward current : IF [A] —4 . . 7] Fuji Electric Co.,Ltd. | NSSF 4622 11/134
Forward Voltage vs. Forward current L - 80 i r 60 . / = 40 h 20 / Sar: aie o Fa ad Fy 0 1 2 3 4 5 ees Forward Voltage : VF(V) ih Reverse recovery chracteristics vs. -di/dt epite VR=300V, IF=50A, Tj=125°C Seass 500 50 Eytzi SS | a scete SJ 400 a 40 & a ee | [—t a a ee ee 5 i oe ee ee a ee ee ee ee ee % yf ee =n. 8 . [er 2 a Do ee) £ a a Pa i? | p44 2 5 7% —— a t+" 5 s A s oe Fy ee D 10 o> a -Y Tea } 4 = ee oe ee eS a ° [ee ie) 500 1000 -di/dt — [A/ ye sec] . ic C a Fuji Electric Co.,Ltd. NSSF 4622 12/13 | —_——
Transient thermal resistance _ T_T TT J i} TTT tH OE 3 ee et eet a Cr or WT r Saal ARE 10° | | A ea eee sei rt 1] tear E PNP ree 3 ay mea) atl il + SSS Se SS SSS See Bey? ESTP edie 10° 10° 10? 10" 10° iH Pulse width : Pw [sec] Fuji Electric Co.,Ltd. A NSSF 4622 13/13 == ee HO4-004-03.