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Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Small molded package
  • Low power loss
  • Soft switching with low switching surge and noise
  • High reliability, high ruggedness (RBSOA, SCSOA etc.)
  • Comprehensive line-up

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Equivalent Circuit Schematic Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltaga V GES Collector DC Tc=25°C I C25 current T c=105°C I C105 1ms Tc=25°C Icp Max. power dissipation (IGBT) P C Max. power dissipation (FWD) P C Operating temperature T j Storage temperature T stg Screw torque - Rating 1200 ±20 135 +150 -40 to +150 Unit V V A A A W W N·m C:Collector E:Emitter G:Gate IGBT + Electrical characteristics (at Tc=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Switching Time Turn-on time Turn-off time FWD forward on voltage Reverse recovery time I CES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf ton tr toff tf VF trr – – 1.0 –– 2 0 5.5 – 8.5 – – 3.5 – 1000 – – 160 – –6 0 – – – 1.2 – – 0.6 – – 1.5 – – 0.5 – 0.16 – – 0.11 – – 0.30 – – – 0.50 – – 3.0 – – 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=8mA VGE=15V, IC=8A VGE=0V VCE=10V f=1MHz V CC=600V, IC=8A VGE=±15V RG=200 ohm (Half Bridge) V CC=600V, IC=8A VGE=+15V RG=20 ohm (Half Bridge) I F=8A IF=8A, VGE=-10V, VR=200V, di/dt=100A/ μs mA μA V V pF μs μs V μs Symbol Characteristics Conditions Unit Min. Typ. Max. Thermal resistance characteristics Thermal resistance – – 0.92 – – 1.47 IGBT FWD °C/W °C/W Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) Rth(j-c) Outline drawings, mm FWD TO-3PL

Collector current vs. Collector-Emitter voltage Tj=25°C Collector-Emitter voltage : VCE (V) Collector current : I C (A) Collector current : I C (A) Collector-Emitter voltage : V CE (V) Collector current vs. Collector-Emitter voltage Tj=125°C Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25°C Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125°C Collector-Emitter voltage : V CE (V) Collector-Emitter voltage : V CE (V) Gate-Emitter voltage : VGE (V) Gate-Emitter voltage : VGE (V) Switching time vs. Collector current VCC=600V, RG=20Ω, VGE=±15V, Tj=25°C Switching time vs. Collector current VCC=600V, RG=20Ω, VGE=±15V, Tj=125°C Switching time : tf,toff, tr, ton, trr2 (nsec) Switching time : tf,toff, tr, ton, trr2 (nsec) Collector current : I C (A) Collector current : I C (A)

Gate resistance : R G (Ω) Switching time vs. RG VCC=600V, IC=8A, VGE=±15V, Tj=25°C Switching time : tf,toff, tr, ton, trr2 (nsec) Gate resistance : R G (Ω) Switching time : tf,toff, tr, ton, trr2 (nsec) Switching time vs. R G VCC=600V, IC=8A, VGE=±15V, Tj=125°C Dynamic input characteristics Tj=25°C Collector-Emitter voltage : VCE (V) Gate charge : Qg (nc) Capacitance vs. Collector-Emitter voltage Tj=25°C Capacitance : Cies, Coes, Cres (nF) Collector-Emitter voltage : V CE (V) Collector current : I C (A) Collector-Emitter voltage : VCE (V) Gate voltage : V GE (V) Short circuit current : I SC (A) Gate-Emitter voltage : VGE (V) Reverse Biased Safe Operating Area +VGE=15V, -VGE 15V, Tj 125°C, RG 20Ω=< =< => Typical short circuit capability VCC=800V, RG=20Ω, Tj=125°C, Short circuit time : t SC (μs)

Reverse recovery time vs. Forward current VR=200V, -di/dt=100A/μsec Reverse recovery time : trr [nsec] Forward current : I F (A) Forward current : I F (A) Reverse recovery current : Irr [A] Forward Voltage vs. Forward current Forward current : I F [A] Forward voltage : V F (V) Reverse recovery chracteristics vs. -di/dt IF=8A, Tj=125°C Reverse recovery time : trr [nsec] -di/dt [A/ μsec] Reverse recovery current : Irr [A] Transient thermal resistance Reverse recovery current vs. Forward current VR=200V, -di/dt=100A/μsec Thermal resistance : Rth(j-c) [°C/W] Pulse width : P W (sec)