1MBC10-060_10 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
1MBC10-060,1MBC10D-060, 1MBG10D-060 Molded IGBT 600V / 10A Molded Package @ Features Small molded package aon. Low power loss Co Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) oe Comprehensive line-up 1mBC10-080 1Maq@100-060 1MBC100-060 @ Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum ratings and characteristics @ Equivalent Circuit Schematic @ Absolute maximum ratings (at Tc=25°C unless otherwise specified) 1MBC10-060 /IGBT IGBT item [-symbot [Rating [oni Collector-Emitter voltage [vces [| 600-——éd[' VV €:Collector Gate-Emitter voltaga Vv Collector [DC A [ims [Te=25°C [ip [80 A o- Max. power dissipation(IGBT) w GrGate Operating temperature °C Storage temperature °C Screw torque EF | 40 ‘| Nem Semiter 4MBC10D-060, 1MBG10D-060 / IGBT+FWD im tht Ieer + Fwo Collector-Emitter voltage Re ee ee ee cicotector Gate-Emitter voltaga Vv Collector [DC [te=25'c fics | 20 A current Bee A [ams _[te=25¢ [tcp | 8A o4 Max. power dissipation (GBT) WwW Gecate Max. power dissipation (FWD) Ww Operating temperature a6. Storage temperature aC. E-Emitter Screw torque - 40. Nem
1MBC10-060, 1MBC10D-060, 1MBG10D-060 Molded IGBT @ Electrical characteristics (at Tj=25°C unless otherwise specified) 41MBC10-060 /IGBT item ‘Symbol [Characteristics | Unit a ce Zero gate voltage collector current | ces | =| = | 4.0 | vee=ov, voessoov | ma Gate-Emitter leakage current | toes | = |= [20 | Veezov, Voeszov | A Gate-Emitter threshold voltage | vere [56 [ = | 86 | vces20v, stoma LV Collector-Emitter saturation voltage | vceisa) [| - [| - | 30 |Voe=t5v Ic=10A input capacitance [ces | - | zoo | - | Voe-ov pF Output capacitance [cos |S - | 150 «| - | Vcest0v Reverse transfer capacitance | Cws | - | 20 | - | fez Turn-on time [tm | - | - [ 12 | vec=300v ic=10a us pe ff fT 06 | voe=st8v Turn-off time [tr | - | - | 4.0 | Rc=2200hm Pe T= P= F085 | (Hatt Bridge) 4MBC10D-060, 1MBG10D-060 / IGBT+FWD. item Symbol [Characteristics sd Unit 7 ee Zero gate votage collector cument | ices [= = Tt Verso, veessoov | ma Gate-Emitter leakage current | ices 20 vcesov. Vereszov a Gate-Emitter threshold voltage | Vern) | 5.8 | = | 85 | Vee=20v. estoma Collector-Emitter saturation voltage | Vena) | - | - | 30. [Veestsvicst0A dV input capacitance See | oF Output capacitance [ Coe = to | vce=tov Reverse transfer capacitance [ce | = [20 [= etme Turn-on time [tar coco Pcueuc pce mba gE NeeRaOOV eR OA us [eof eT oe | veestev Turn-off time [te oT 0-220 ofr pe f= T= F035 | Hatt Bridge) FWD forward on voltage [ve bo Teton Veco @ Thermal resistance characteristics 4MBC10-060 /IGBT i cee Thermal resistance [ Reni) [= T - e6 Jicer tc 4MBC10D-060, 1MBG10D-060/ IGBT+FWD. He Cpe e Thermal resistance Lpingiey es fice ew [Ringe or Two ew i Outline drawings, mm 1MBC10-060, 1MBC10D-060 as 4MBG10D-060 TO-220AB os (rls 7! 3 T pack-S (SMD type) . igor) ear hres q PA ia HES i rea8 — Srs2.008 2 sls j inet F498 O08) 28 | + ISS ‘eas; ss a er easy Hee oe | Losioce
254 Laat ,
| eas ton) 02) ein (6.20)
1MBC10-060, 1MBC10D-060, 1MBG10D-060 Molded IGBT @ Characteristics 4MBC10-060,1MBC10D-060,1MBG10D-060 Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage Ti=25°C Tj=125°C. 1 vir | i i Tucano a se vnefeememnre +f mel | a2. a + Jonas ened feel | i | ; | | : | i 2 i i i 5 | ! 5 1 i ne) 3 i | 3 i | 8 ' > nl fa ' y i ) i : i i ov i co ° ° at 0 1 2 8 4 5 ° 1 2 3 4 5 CollectorEmitter voltage : VoE IV] Collector Emitter voliage © VCE {V] Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Tj=125°C | | | i | | i | i s | | ' = I i s | | 8 | i 8 i iin 3 ee ee 5 i | : | 1 ° 5 10 15 20 0 5 10 15 20 Gate-Emitter voltage : VoEIMI Gate-Emitter voltage» VoEV] Switching time vs. Collector current ‘Switching time vs. Collector current Voo=300V, Re=220 ohm, Vee=#15V, Ti=25°C Voo=300V, Ro=220 ohm, Vee=#15V, Tj=125°C 1009 = 1000 F= = = a oe — | ot i Tr i | | e = / i i = et | | 5 it 5 } i | e a e : 1 = 1% aml — i = Sa GEE ER | | i 0 i i 0 | i i 0 5 10 15 0 5 10 8 Collector current : Ie(A] Collector current - Ic]
1MBC10-060, 1MBC10D-060, 1MBG10D-060 IGBT Module @ Characteristics 1MBC10-060,1MBC10D-060,1MBG10D-060 Switching time vs. Re Switching time vs. Re Veo=300V, Io=10A, Voe=+15V, Ti=25°C Veo=300V, Io=10A, Voe=#15V, Ti=125°C. = i = j : i | = : we = ! t 10 10 ° 200 400= 0080010001200 0 200400600 80010001200 Gate resistance - RG [ohm] Gate resistance © RG [ohm] Dynamic input characteristics Capacitance vs. Collector-Emitter voltage
500 Tj=25°C os T525°C
fae | oderny 2001 ed i i = 400 Prooyon) | . a 20 reo Feed 4 Jprceernfenpenecdonnons 300 a ZI. bode ¢ i | | £ 1 1 1 Ss 3 | g i H | | 5 t i { | Z soo im - i ne By pe St ere 5 | = 2 : po © 100 tt fom joo 58 8 | | ] i famed tres \\ i | i é i | | i i \\ / | i 0 ee ae i { 4 4 Y Ss i i ! | i i { f 0 a ee = 5 0 10 20 20 40 50 0 5 ce ee ne Gate charge . Qg [nC] Collector-Emitter voltage © VCE [V] Reversed biased safe operating area Typical short circuit capability +Vce=15V, -Vee = 15V, Tj$ 125°C, Re2 220 ohm sty NOG=AOOV, RE=220 ohm, T=125°C fs rr rn rr = j | i = i | | * a | j ise Py = | : i 5 ! | | 5 ° : | i oo u -—} 4 oy ® | i i ° “ 0 ° Collector-Emitter voltage = VcE[V] Gate voltage . VGE[V]
1MBC10-060, 1MBC10D-060, 1MBG10D-060 IGBT Module Mf Characteristics 4MBC10-060,1MBC10D-060,1MBG10D-060 Transient thermal resistance 10! es See eee toe | | Pulse width | Pw [sec.] 4MBC10D-060,1MBG10D-060 Reverse recovery time vs. Forward current Reverse recovery current vs. Forward current ‘oo -di/dt=30A /usec -di/dt=30A / usec i i} i co | | i {rare ee i + ® | 5 i ~ | é \\ o 0 H 0 5 10 5 0 5 10 5 Fomerdcurent : IFA] Forward curent © IF(A] Forward current vs. Foeward voltage Reverse recovery time characteristics vs. -di/dt IF=10A, Tj=125°C 500 50 / i Bam Peg pepe on é i £ k \\ i | i 3 2 a 1 | 8 to f- : Sn nl a ee aes ° bat ° oo 0 05 10 18 20 25 30 358 40 0 2 40 e000 120140 Forward voltage : VF IV] lst [A us20]