1MBC05-060_01 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Small molded package
  • Low power loss
  • Soft switching with low switching surge and noise
  • High reliability, high ruggedness (RBSOA, SCSOA etc.)
  • Comprehensive line-up

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltaga VGES Collector DC Tc=25°C I C25 current T c=100°C I C100 1ms Tc=25°C Icp Max. power dissipation(IGBT) P C Operating temperature Tj Storage temperature Tstg Screw torque - Rating 600 ±20 +150 -40 to +150 Unit V V A A A W N·m Equivalent Circuit Schematic Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltaga VGES Collector DC Tc=25°C I C25 current T c=100°C I C100 1ms Tc=25°C Icp Max. power dissipation (IGBT) P C Max. power dissipation (FWD) P C Operating temperature Tj Storage temperature Tstg Screw torque - Rating 600 ±20 +150 -40 to +150 Unit V V A A A W W N·m 1MBC05-060 / IGBT 1MBC05D-060, 1MBG05D-060 / IGBT+FWD C:Collector E:Emitter G:Gate IGBT C:Collector E:Emitter G:Gate IGBT + FWD

Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time I CES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf – – 1.0 –– 2 0 5.5 – 8.5 – – 3.0 – 400 – –8 5 – –1 5 – – – 1.2 – – 0.6 – – 1.0 – – 0.35 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V VCE=10V f=1MHz V CC=300V IC=5A VGE=±15V RG=330 ohm (Half Bridge) mA µA V V pF µs Electrical characteristics (at Tj=25°C unless otherwise specified) Thermal resistance characteristics Thermal resistance – – 2.50 – – 5.00 IGBT FWD °C/W °C/W Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) Rth(j-c) Symbol Characteristics Conditions Unit Min. Typ. Max. Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD forward on voltage Reverse recovery time I CES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr – – 1.0 –– 2 0 5.5 – 8.5 – – 3.0 – 400 – –8 5 – –1 5 – – – 1.2 – – 0.6 – – 1.0 – – 0.35 – – 3.0 – – 0.3 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V VCE=10V f=1MHz V CC=300V, IC=5A VGE=±15V RG=330 ohm (Half Bridge) I F=5A, VGE=0V IF=5A, VGE=-10V, di/dt=100A/µs mA µA V V pF µs V µs Symbol Characteristics Conditions Unit Min. Typ. Max. 1MBC05-060, 1MBC05D-060, 1MBG05D-060 Molded IGBT 1MBC05-060 / IGBT 1MBC05D-060, 1MBG05D-060 / IGBT+FWD Thermal resistance – – 2.50 IGBT °C/W Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) 1MBC05-060 / IGBT 1MBC05D-060, 1MBG05D-060 / IGBT+FWD Outline drawings, mm 1MBC05-060, 1MBC05D-060 TO-220AB 1MBG05D-060 T pack-S (SMD type)

1MBC05-060,1MBC05D-060,1MBG05D-060 1MBC05-060, 1MBC05D-060, 1MBG05D-060 Molded IGBT Collector current vs. Collector-Emitter voltage Tj=25°C Collector current vs. Collector-Emitter voltage Tj=125°C Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Switching time vs. Collector current Vcc=300V, R G=330 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=300V, RG=330 ohm, VGE=±15V, Tj=125°C Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector current : Ic [A] Collector current : Ic [A] 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 0 5 10 15 20 Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V] Switching time : ton, tr, toff, tf [n sec.] 100 Collector current : Ic [A] Collector current : Ic [A] Switching time : ton, tr, toff, tf [n sec.] 0 2 4 6 8 1000 100 1000

Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [nF] Capacitance vs. Collector-Emitter voltage Tj=25°C 0 5 10 15 20 25 30 35 100 IGBT Module Switching time vs. RG Vcc=300V, Ic=5A, VGE=±15V, Tj=25°C Dynamic input characteristics Tj=25°C Gate resistance : RG [ohm] 0 500 1000 1500 2000 2500 Gate charge : Qg [nC] 100 1000 Switching time : ton, tr, toff, tf [n sec.]Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] 0 100 200 300 400 500 600 700 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] 0 5 10 15 20 25 30 500 400 300 200 100 Switching time vs. RG Vcc=300V, Ic=5A, VGE=±15V, Tj=125°C Gate resistance : RG [ohm] 100 1000 Switching time : ton, tr, toff, tf [n sec.] Reversed biased safe operating area +VGE=15V, -VGE = 15V, Tj = 125°C, RG = 330 ohm< <> Typical short circuit capability Vcc=400V, RG=330 ohm, Tj=125°C Short circuit time : tsc [µs] 0 500 1000 1500 2000 2500 1000 5 10 15 20 25 Short circuit time current : Isc [A] Characteristics 1MBC05-060,1MBC05D-060,1MBG05D-060

Pulse width : PW [sec.] Thermal resistance : Rth (j-c) [°C/W] Transient thermal resistance Characteristics 1MBC05-060,1MBC05D-060,1MBG05D-060 1MBC05D-060,1MBG05D-060 Reverse recovery time vs. Forward current -di/dt=15A / µsec Reverse recovery current vs. Forward current -di/dt=15A / µsec reverse recovery time : trr [nsec] reverse recovery current : Irr [A] 500 400 300 200 100 1.2 1.0 0.8 0.6 0.4 0.2 0 2 4 6 8 Forward current : IF [A] Forward current : IF [A] Forward voltage : VF [V] Forward current : IF [A] reverse recovery time : trr [nsec] -di/dt [ A / µsec ] Forward current vs. Foeward voltage Reverse recovery time characteristics vs. -di/dt IF=5A, Tj=125°C 2.5 2.0 1.5 1.0 0.5 0.0 reverse recovery current : Irr [A]