DATASHEET SEARCH SITE

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Small molded package
  • Low power loss
  • Soft switching with low switching surge and noise
  • High reliability, high ruggedness (RBSOA, SCSOA etc.)
  • Comprehensive line-up

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltaga V GES Collector DC Tc=25°C I C25 current T c=100°C I C100 1ms Tc=25°C Icp Max. power dissipation(IGBT) P C Operating temperature T j Storage temperature T stg Screw torque - Rating 1200 ±20 115 +150 -40 to +150 Unit V V A A A W N·m Equivalent Circuit Schematic Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltaga V GES Collector DC Tc=25°C I C25 current T c=100°C I C100 1ms Tc=25°C Icp Max. power dissipation (IGBT) P C Max. power dissipation (FWD) P C Operating temperature T j Storage temperature T stg Screw torque - Rating 1200 ±20 115 +150 -40 to +150 Unit V V A A A W W N·m 1MB08-120 / IGBT 1MB08D-120 / IGBT+FWD C:Collector E:Emitter G:Gate IGBT C:Collector E:Emitter G:Gate IGBT + FWD

Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time I CES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf – – 1.0 –– 2 0 5.5 – 8.5 – – 3.5 – 1000 – – 160 – –6 0 – – – 1.2 – – 0.6 – – 1.5 – – 0.5 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=8mA VGE=15V, IC=8A VGE=0V VCE=10V f=1MHz V CC=600V IC=8A VGE=±15V RG=200 ohm (Half Bridge) mA µA V V pF µs Electrical characteristics (at Tj=25°C unless otherwise specified) Thermal resistance characteristics Thermal resistance – – 1.08 – – 1.78 IGBT FWD °C/W °C/W Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) Rth(j-c) Symbol Characteristics Conditions Unit Min. Typ. Max. Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD forward on voltage Reverse recovery time I CES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr – – 1.0 –– 2 0 5.5 – 8.5 – – 3.5 – 1000 – – 160 – –6 0 – – – 1.2 – – 0.6 – – 1.5 – – 0.5 – – 3.0 – – 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=8mA VGE=15V, IC=8A VGE=0V VCE=10V f=1MHz V CC=600V, IC=8A VGE=±15V RG=200 ohm (Half Bridge) I F=8A, VGE=0V IF=8A, VGE=-10V, di/dt=100A/µs mA µA V V pF µs V µs Symbol Characteristics Conditions Unit Min. Typ. Max. 1MB08-120, 1MB08D-120 Molded IGBT 1MB08-120 / IGBT 1MB08D-120 / IGBT+FWD Thermal resistance – – 1.08 IGBT °C/W Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) 1MB08-120 / IGBT 1MB08D-120 / IGBT+FWD Outline drawings, mm 1MB08-120, 1MB08D-120 TO-3P

1MB08-120,1MB08D-120 1MB08-120, 1MB08D-120 Molded IGBT Collector current vs. Collector-Emitter voltage Tj=25°C Collector current vs. Collector-Emitter voltage Tj=125°C Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Switching time vs. Collector current Vcc=600V, RG=200 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=600V, RG=200 ohm, VGE=±15V, Tj=125°C Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector current : Ic [A] Collector current : Ic [A] 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 0 5 10 15 20 Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V] Switching time : ton, tr, toff, tf [n sec.]100 Collector current : Ic [A] Collector current : Ic [A] Switching time : ton, tr, toff, tf [n sec.] 0 2 4 6 8 10 1000 100 1000 0 1 2 3 4 5 0 5 10 15 20 0 2 4 6 8 10

Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [nF] Capacitance vs. Collector-Emitter voltage Tj=25°C 0 5 10 15 20 25 30 35 100 IGBT Module Switching time vs. RG Vcc=600V, Ic=8A, VGE=±15V, Tj=25°C Dynamic input characteristics Tj=25°C Gate resistance : RG [ohm] Gate charge : Qg [nC] 100 1000Switching time : ton, tr, toff, tf [n sec.]Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] 0 200 400 600 800 1000 1200 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] 0 20 40 60 80 100 120 140 1000 800 600 400 200 Switching time vs. RG Vcc=600V, Ic=8A, VGE=±15V, Tj=125°C Gate resistance : RG [ohm] 100 1000 100 Switching time : ton, tr, toff, tf [n sec.] Reversed biased safe operating area +VGE=15V, -VGE = 15V, Tj = 125°C, RG = 200 ohm< <> Typical short circuit capability Vcc=800V, RG=200 ohm, Tj=125°C Short circuit time : tsc [µs] 1000 400 200 100 5 10 15 20 25 Short circuit time current : Isc [A] Characteristics 1MB08-120,1MB08D-120 1MB08-120, 1MB08D-120 Gate voltage : VGE [V] 100 1000 1000

Pulse width : PW [sec.] Thermal resistance : Rth (j-c) [°C/W] Transient thermal resistance Characteristics 1MB08-120,1MB08D-120 1MB08D-120 Reverse recovery time vs. Forward current -di/dt=24A / µsec Reverse recovery current vs. Forward current -di/dt=24A / µsec reverse recovery time : trr [nsec] reverse recovery current : Irr [A] 800 600 400 200 0 2 4 6 8 10 Forward current : IF [A] Forward current : I F [A] 0 1.0 2.0 3.0 4.0 0 20 40 60 80 100 Forward voltage : VF [V] Forward current : IF [A] reverse recovery time : trr [nsec] -di/dt [ A / µsec ] Forward current vs. Foeward voltage Reverse recovery time characteristics vs. -di/dt IF=8A, Tj=125°C reverse recovery current : Irr [A] 100 10-1 10-2 101 600 500 400 300 200 100 1MB08-120, 1MB08D-120 0 2 4 6 8 10