1MB05D-120 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Fuji Discrete Package IGBT nn Features

  • Square RBSOA
  • Low Saturation Voltage
  • Less Total Power Dissipation
  • Minimized Internal Stray Inductance nn Applications
  • High Power Switching
  • A.C. Motor Controls
  • D.C. Motor Controls
  • Uninterruptible Power Supply nn Outline Drawing nn Maximum Ratings and Characteristics
  • Absolute Maximum Ratings ( T c =25°C ) Items Symbols Ratings Units Collector-Emitter Voltage V CES 1200 V Gate -Emitter Voltage V GES ± 20 V DC T c = 25°C IC 25 9 Collector Current DC T c =100°C IC 100 5 A 1ms T c = 25°C IC PULSE 27 IGBT Max. Power Dissipation P C 100 W FWD Max. Power Dissipation P C 60 W Operating Temperature T j +150 °C Storage Temperature T stg -40 ∼ +150 °C Mounting Screw Torque 50 Nm
  • Electrical Characteristics ( at T j=25°C ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current ICES V GE =0V V CE =1200V 1.0 mA Gate-Emitter Leackage Current IGES V CE =0V V GE = ± 20V 20 µ A Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =5mA 5.5 8.5 Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =5A 3.5 Input capacitance C ies V GE =0V 650 Output capacitance C oes V CE =10V 150 pF Reverse Transfer capacitance C res f=1MHz 40 tON V CC =600V 1.2 tr IC =5A 0.6 tOFF V GE = ±15V 1.5 Switching Time tf R G =330 Ω 0.5 tON V CC =600V 0.16 tr IC =5A 0.11 tOFF V GE =+15V 0.30 tf R G =33 Ω 0.5 Diode Forward On-Voltage V F IF =5A V GE =0V 3.0 V Reverse Recovery Time trr IF =5A , VGE=-10V, di/dt=100A/µ s 350 ns
  • Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units R th(j-c) IGBT 1.25 R th(j-c) Diode 2.08 nn Equivalent Circuit Turn-on Time Turn-on Time Turn-off Time Turn-off Time Thermal Resistance V µ s µ s °C/W

V GE =20V 15V 12V Collector Current vs. Collector-Emitter Voltage T j=25°C Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 0 1 2 3 4 5 6 10V V GE =20V 15V 12V Collector Current vs. Collector-Emitter Voltage T j=125°C Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 0 5 10 15 20 25 I C = 10A 2.5A Collector-Emitter Voltage vs. Gate-Emitter Voltage T j=25°C Collector-Emitter Voltage : V CE [V] Gate-Emitter Voltage : V GE [V] 0 5 10 15 20 25 I C = 10A 2.5A Collector-Emitter Voltage vs. Gate-Emitter Voltage T j=125°C Collector-Emitter Voltage : V CE [V] Gate-Emitter Voltage : V GE [V] 0 2 4 6 8 10 12 100 1000 t f t r t off t on Switching Time vs. Collector Current V CC =600V, R G =33 Ω , V GE =±15V, T j=25°C Switching Time : t on , t r , t off , t f [nsec] Collector Current : I C [A] 0 2 4 6 8 10 12 100 1000 t f t r t off t on Switching Time vs. Collector Current V CC =600V, R G =33 Ω , V GE =±15V, T j=125°C Switching Time : t on , t r , t off , t f [nsec] Collector Current : I C [A]

Switching Time vs. R G V CC =600V, I C =5A, V GE =±15V, T j=25°C Switching Time : t on , t r , t off , t f [nsec] Gate Resistance : R G [ Ω ] 100 100 1000 t f t r t off t on Switching Time vs. R G V CC =600V, I C =5A, V GE =±15V, T j=125°C Switching Time : t on , t r , t off , t f [nsec] Gate Resistance : R G [ Ω ] 0 5 10 15 20 25 30 35 100 1000 C res C oes C ies Capacitance vs. Collector-Emitter Voltage T j=25°C Capacitance : C oes , C res , C ies [pF] 0 20 40 60 80 100 120 200 400 600 800 1000 Collector-Emitter Voltage : V CE [V] Gate Charge : Q G [nQ] V CC = 400V 600V 800V Gate-Emitter Voltage : V GE [V] Dynamic Input Characteristics T j=25°C 0 2 4 6 8 10 100 150 25°C 125°C Reverse Recovery Time vs. Forward Current V R =200V, -di / dt =100A/µsec Reverse Recovery Time : t rr [nsec] Forward Current : I F [A] 0 2 4 6 8 10 25°C 125°C Reverse Recovery Current vs. Forward Current V R =200V, -di / dt =100A/µsec Reverse Recovery Current : I rr [A] Forward Current : I F [A]

0 200 400 600 800 1000 1200 1400 Reverse Biased Safe Operating Area +V GE =15V, -V GE < 15V, T j< 125°C, R G > 33 Ω Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 5 10 15 20 25 100 120 Short Circuit Current : I SC [A] t SC Gate Voltage : V GE [V] Short Circuit Time : t SC [µs] Typical Short Circuit Capability V CC =800V, R G =33 Ω , T j=125°C I SC 25°CT j=125°C Forward Voltage vs. Forward Current Forward Current : I F [A] Forward Voltage : V F [V] 100 150 200 t rr Reverse Recovery Time : t rr [nsec] -di / dt [A/µsec] 0 100 200 300 400 500 600 Reverse Recovery Current : I rr [A] I rr Reverse Recovery Characteristics vs. -di / dt I F =5A, T j=125°C 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 IGBT FWD Transient Thermal Resistance Thermal Resistance : Rth(j-c) [°C/W] Pulse Width : P W [sec]

(E on , E off vs. I C ) Test Circuit Switching waveforms P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com IC [A]