1KSMB TSC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 6

Technical content

  • Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test SYMBOL UNIT P PK Watts PD Watts TJ °C TSTG °C Note 2: VF=3.5V for Devices of VBR≦50V and VF=5.0V Max. for Devices VBR>50V 1. For Bidirectional use CA suffix Document Number: DS_D1408012 Version: E15 Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2 Devices for Bipolar Applications Typical thermal resistance RθJL RθJA 100 oC/W Operating junction temperature range A Maximum instantaneous forward voltage at 50 A for Unidirectional only (Note 2) VF 3.5 / 5.0 Volts Storage temperature range - 55 to +175 Peak power dissipation at TA=25°C, tp=1ms (Note 1) 1000 Steady state power dissipation 5 - 55 to +175 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 Case: DO-214AA (SMB) Polarity: Indicated by cathode band Weight: 0.11 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER VALUE ORDER INFORMATION (EXAMPLE) 1KSMB SERIES Taiwan Semiconductor 1000W, 10V - 100V Surface Mount Transient Voltage Suppressor

FEATURES

  • Fast response time: Typically less than 1.0ps from 0 volt to BV min Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC DO-214AA (SMB) MECHANICAL DATA 1KSMB39A R5G Green compound code Packing code Part no.

(TA=25°C unless otherwise noted) Document Number: DS_D1408012 Version: E15 1KSMB SERIES Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES 100 125 0 25 50 75 100 125 150 175 200 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) TA, AMBIENT TEMPERATURE (oC) FIG.2 PULSE DERATING CURVE 100 1 10 100 IFSM, PEAK FORWARD SURGE CURRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY 8.3ms Single Half Sine Wave 100 120 140 00 . 511 . 522 . 533 . 54 PEAK PULSE CURRENT (%) t, TIME ms FIG. 3 CLAMPING POWER PULSE WAVEFORM td Peak Value IPPM tr=10μs Half Value-IPPM/2 10/1000μs, WAVEFORM as DEFINED by R.E.A. PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF I PPM 100 1000 10000 1 10 100 CJ, JUNCTION CAPACITANCE (pF) A V(BR), BREAKDOWN VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p VR=0 MEASURED at STAND-OFF VOLTAGE,Vwm 100 1 10 100 1000 PPPM, PEAK PULSE POWER, KW tp, PULSE WIDTH, (μs) FIG. 1 PEAK PULSE POWER RATING CURVE NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3

Test Stand-Off Maximum Maximum Maximum Current Voltage Reverse Leakage Peak Pulse Clamping Voltage IT VWM @ VWM Current IPPM @ IPPM Min Max (mA) (V) ID (μA) (A) (Note 2) VC(V) 1KSMB10A A10E 1KSMB10CA N10E 1KSMB11A A10F 1KSMB11CA N10F 1KSMB12A A10G 1KSMB12CA N10G 1KSMB13A A10H 1KSMB13CA N10H 1KSMB15A A10I 1KSMB15CA N10I 1KSMB16A A10J 1KSMB16CA N10J 1KSMB18A A10K 1KSMB18CA N10K 1KSMB20A A10L 1KSMB20CA N10L 1KSMB22A A10M 1KSMB22CA N10M 1KSMB24A A10N 1KSMB24CA N10N 1KSMB27A A10O 1KSMB27CA N10O 1KSMB30A A10P 1KSMB30CA N10P 1KSMB33A A10Q 1KSMB33CA N10Q 1KSMB36A A10R 1KSMB36CA N10R 1KSMB39A A10S 1KSMB39CA N10S 1KSMB43A A10T 1KSMB43CA N10T 1KSMB47A A10U 1KSMB47CA N10U 1KSMB51A A10V 1KSMB51CA N10V 1KSMB56A A10W 1KSMB56CA N10W 1KSMB62A A10X 1KSMB62CA N10X 1KSMB68A A10Y 1KSMB68CA N10Y 1KSMB75A A10Z 1KSMB75CA N10Z 1KSMB82A B10A 1KSMB82CA O10A Document Number: DS_D1408012 Version: E15 Device Marking Code Breakdown Voltage V BR (V) (Note 1) 64.8 Device 40.2 1.0 15.4 1KSMB SERIES Taiwan Semiconductor 44.7 49.4 1.0 13.0 77.0 1.0 53.0 1.0 11.8 70.1 85.0 58.9 65.1 113 14.5 103 47.2 21.2 1.0 13.6 1.0 44.4 18.2 22.5 15.2 16.8 32.7 30.6 1.0 20.5 1.0 30.1 27.7 33.2 22.8 25.2 21.9 45.7 1.0 30.8 1.0 20.0 41.4 49.9 34.2 37.8

Test Stand-Off Maximum Maximum Maximum Current Voltage Reverse Leakage Peak Pulse Clamping Voltage IT VWM @ VWM Current IPPM @ IPPM Min Max (mA) (V) ID (μA) (A) (Note 2) VC(V) 1KSMB91A B10B 1KSMB91CA O10B 1KSMB100A B10C 1KSMB100CA O10C Notes: 1. V BR measure after IT applied for 300μs, IT=square wave pulse or equivalent. 2. All terms and symbols are consistent with ANSI/IEEE C62.35. 3. For Bidirectional use CA suffix Document Number: DS_D1408012 Version: E15 125 1KSMB SERIES Taiwan Semiconductor Device Device Marking Code Breakdown Voltage VBR (V) (Note 1) 85.5 1.0 7.3 13795 105 1.0

A 1.95 2.10 0.077 0.083 B 4.25 4.75 0.167 0.187 C 3.48 3.73 0.137 0.147 D 1.99 2.61 0.078 0.103 E 0.90 1.41 0.035 0.056 F 5.10 5.30 0.201 0.209 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document Number: DS_D1408012 Version: E15 MARKING DIAGRAM DO-214AA (SMB) D 1.8 0.071 E 6.8 0.268 B 2.5 0.098 C 4.3 0.169 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 2.3 0.091 1KSMB SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch)

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