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Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 17
Technical content
Features
- Single channel isolated IGBT driver
- For 600 V/650 V/1200 V IGBTs and MOSFETs
- Up to 10 A typical peak current at rail-to-rail outputs
- Separate source and sink outputs
- Galvanically isolated coreless transformer driver
- Wide input voltage operating range
- Suitable for operation at high ambient temperature
Applications
- AC and brushless DC motor drives
- High voltage DC/DC-converter and DC/AC-inverter
- Induction heating resonant application
- UPS-systems, welding and solar Product Type Output current configuration Package 1EDI05I12AH ±0.5 A PG-DSO-8-59 1EDI20I12AH ±2.0 A PG-DSO-8-59 1EDI20H12AH ±2.0 A for high speed IGBTs PG-DSO-8-59 1EDI40I12AH ±4.0 A PG-DSO-8-59 1EDI60I12AH ±6.0 A PG-DSO-8-59 1EDI60H12AH ±6.0 A for high speed IGBTs PG-DSO-8-59
Description
The 1EDI05I12AH, 1EDI20I12AH, 1EDI40I12AH, 1EDI60I12AH, 1EDI20H12AH and 1EDI60H12AH are galvanically isolated single channel IGBT driver in a PG-DSO-8-59 package that provide output currents up to 10 A at separated output pins. The input logic pins operate on a wide input voltage range from 3 V to 15 V using scaled CMOS threshold levels to support even 3.3 V microcontrollers. Data transfer across the isolation barrier is realized by the coreless transformer technology. Every driver family member comes with logic input and driver output undervoltage lockout (UVLO) and active shutdown OUT+ OUT+ Control EiceDRIVER TM 1EDIxxy12AH EiceDRIVER TM 1EDIxxy12AH IN+ IN+ IN- IN- GND1 VCC1 VCC2,H VCC2,L GND2,L GND2,HGND1 VCC1 OUT- OUT- 1EDIxxI12AH/1EDIxxH12AH Datasheet Please read the Important Notice and Warnings at the end of this document Rev. 2.0 www.infineon.com/eicedriver 2016-07-05
EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Table of Contents Datasheet 2 Rev. 2.0 2016-07-05
1 Block Diagram
EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Block Diagram Datasheet 3 Rev. 2.0 2016-07-05
2 Pin Configuration and Functionality
2.1 Pin Configuration
Pin No. Name Function
1 VCC1 Positive logic supply
2 IN+ Non-inverted driver input (active high)
3 IN- Inverted driver input (active low)
4 GND1 Logic ground
5 GND2 Power ground
6 VCC2 Positive power supply output side
7 OUT+ Driver source output
8 OUT- Driver sink output
Figure 2 PG-DSO-8-59 (top view)
2.2 Pin Functionality
Logic input supply voltage of 3.3 V up to 15 V wide operating range. IN+ Non Inverting Driver Input IN+ non-inverted control signal for driver output if IN- is set to low. (Output sourcing active at IN+ = high and IN- = low) Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN+. An internal weak pull-down-resistor favors off-state. IN- Inverting Driver Input IN- inverted control signal for driver output if IN+ is set to high. (Output sourcing active at IN- = low and IN + = high) EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Pin Configuration and Functionality Datasheet 4 Rev. 2.0 2016-07-05
Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN-. An internal weak pull-up-resistor favors off-state. GND1 Ground connection of input circuit. GND2 Reference Ground Reference ground of the output driving circuit. In case of a bipolar supply (positive and negative voltage referred to IGBT emitter) this pin is connected to the negative supply voltage. VCC2 Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close to this supply pin. OUT+ Driver Source Output Driver source output pin to turn on external IGBT . During on-state the driving output is switched to VCC2. Switching of this output is controlled by IN+ and IN-. This output will also be turned off at an UVLO event. During turn off the OUT+ terminal is able to sink approx. 100 mA. In case of an unconnected OUT- the complete gate charge is discharged through this channel resulting in a slow turn off. OUT- Driver Sink Output Driver sink output pin to turn off external IGBT . During off-state the driving output is switched to GND2. Switching of this output is controlled by IN+ and IN-. In case of UVLO an active shut down keeps the output voltage at a low level. EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Pin Configuration and Functionality Datasheet 5 Rev. 2.0 2016-07-05
3 Functional Description
3.1 Introduction
The 1EDIxxI12AH and 1EDIxxH12AH are general purpose IGBT gate drivers. Basic control and protection features support fast and easy design of highly reliable systems. The integrated galvanic isolation between control input logic and driving output stage grants additional safety. Its wide input voltage supply range supports the direct connection of various signal sources like DSPs and microcontrollers. The separated rail-to-rail driver outputs simplify gate resistor selection, save an external high current bypass diode and enhance dV/dt control.
3.2 Supply
The driver can operate over a wide supply voltage range, either unipolar or bipolar. GND1 IN+ IN- VCC1 OUT+ VCC2 GND2 OUT- +5V SGND IN +15V 10R 1µ100n 3R3 -8V 1µ 0V Figure 3 Application Example Bipolar Supply With bipolar supply the driver is typically operated with a positive voltage of 15 V at VCC2 and a negative voltage of -8 V at GND2 relative to the emitter of the IGBT . Negative supply can help to prevent a dynamic turn on due to the additional charge which is generated from IGBT’s input capacitance. GND1 IN+ IN- VCC1 OUT+ VCC2 GND2 OUT- +5V SGND IN +15V 10R 1µ100n 3R3 Figure 4 Application Example Unipolar Supply For unipolar supply configuration the driver is typically supplied with a positive voltage of 15 V at VCC2. In this case, careful evaluation for turn off gate resistor selection is recommended to avoid dynamic turn on. EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Functional Description Datasheet 6 Rev. 2.0 2016-07-05
3.3 Protection Features
3.3.1 Undervoltage Lockout (UVLO)
To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for input and output independently. Operation starts only after both VCC levels have increased beyond the respective VUVLOH levels. If the power supply voltage VVCC1 of the input chip drops below VUVLOL1 a turn-off signal is sent to the output chip before power-down. The IGBT is switched off and the signals at IN+ and IN- are ignored until VVCC1 reaches the power-up voltage VUVLOH1 again. If the power supply voltage VVCC2 of the output chip goes down below VUVLOL2 the IGBT is switched off and signals from the input chip are ignored until VVCC2 reaches the power-up voltage VUVLOH2 again. Note: VVCC2 is always referred to GND2 and does not differentiate between unipolar or bipolar supply.
3.3.2 Active Shut-Down
The active shut-down feature ensures a safe IGBT off-state in case the output chip is not connected to the power supply or an undervoltage lockout is in effect. The IGBT gate is clamped at OUT- to GND2.
3.3.3 Short Circuit Clamping
During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply voltage. A maximum current of 500 mA may be fed back to the supply through this path for 10 μ s. If higher currents are expected or tighter clamping is desired external Schottky diodes may be added.
3.4 Non-Inverting and Inverting Inputs
Figure 6 Typical Switching Behavior EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Functional Description Datasheet 7 Rev. 2.0 2016-07-05
There are two possible input modes to control the IGBT . At non-inverting mode IN+ controls the driver output while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input pulse width is defined to filter occasional glitches.
3.5 Driver Outputs
The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to the low internal voltage drop, switching behavior of the IGBT is predominantly governed by the gate resistor. Furthermore, it reduces the power to be dissipated by the driver. EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Functional Description Datasheet 8 Rev. 2.0 2016-07-05
4 Electrical Parameters
4.1 Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND1. Table 2 Absolute Maximum Ratings Parameter Symbol Values Unit Note / Test ConditionMin. Max. Power supply output side VVCC2 -0.3 40 V 1) Gate driver output VOUT VGND2-0.3 VVCC2+0.3 V 1) Positive power supply input side VVCC1 -0.3 18.0 V – Logic input voltages (IN+,IN-) VLogicIN -0.3 18.0 V – Input to output isolation voltage (GND2) VGND2 -1200 1200 V GND2 - GND1 Junction temperature TJ -40 150 °C – Storage temperature TS -55 150 °C – Power dissipation (Input side) PD, IN – 25 mW 2) @TA = 25°C Power dissipation (Output side) PD, OUT – 400 mW 2) @TA = 25°C Thermal resistance (Input side) RTHJA,IN – 145 K/W 2) @TA = 85°C Thermal resistance (Output side) RTHJA,OUT – 165 K/W 2) @TA = 85°C ESD capability VESD,HBM – 2 kV Human body model3) VESD,CDM – 1 kV Charged device model4) 1 With respect to GND2. 2 See Figure 10 for reference layouts for these thermal data. Thermal performance may change significantly with layout and heat dissipation of components in close proximity. 3 According to EIA/JESD22-A114-C (discharging a 100 pF capacitor through a 1.5 kΩ series resistor).
4 According to EIA/JESD22-C101 (specified waveform characteristics)
EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Electrical Parameters Datasheet 9 Rev. 2.0 2016-07-05
4.2 Operating Parameters
Note: Within the operating range the IC operates as described in the functional description. Unless otherwise noted all parameters refer to GND1. Table 3 Operating Parameters Parameter Symbol Values Unit Note / Test ConditionMin. Max. Power supply output side VVCC2 13 35 V 5) Power supply input side VVCC1 3.1 17 V – Logic input voltages (IN+,IN-) VLogicIN -0.3 17 V – Switching frequency fsw – 1.0 MHz 6)7) Ambient temperature TA -40 125 °C – Thermal coefficient, junction-top Ψ th,jt – 4.8 K/W 7) at TA = 85°C Common mode transient immunity (CMTI) |dVISO/dt| – 100 kV/μ s 7) at 1000 V
4.3 Electrical Characteristics
Note: The electrical characteristics include the spread of values in supply voltages, load and junction temperatures given below. Typical values represent the median values at TA = 25°C. Unless otherwise noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 6 to 8).
4.3.1 Voltage Supply
Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max. UVLO threshold input chip VUVLOH1 – 2.85 3.1 V – VUVLOL1 2.55 2.75 – V – UVLO hysteresis input chip (VUVLOH1 - VUVLOL1) VHYS1 0.09 0.1 – V – UVLO threshold output chip (IGBT supply) VUVLOH2 – 12.0 12.7 V 8) VUVLOL2 10.5 11.1 – V 8) 5 With respect to GND2. 6 do not exceed max. power dissipation
7 Parameter is not subject to production test - verified by design/characterization
8 With respect to GND2. EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Electrical Parameters Datasheet 10 Rev. 2.0 2016-07-05
Table 4 Voltage Supply (Continued) Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max. UVLO hysteresis output chip (VUVLOH2 - VUVLOL2) VHYS2 0.7 0.85 – V – Quiescent current input chip IQ1 – 0.65 1.0 mA VVCC1 = 5 V IN+ = High, IN- = Low =>OUT = High Quiescent current output chip IQ2 – 1.2 2.0 mA VVCC2 = 15 V IN+ = High, IN- = Low =>OUT = High
4.3.2 Logic Input
V IN+L ,V IN-L V IN+H ,V IN-H V VCC1,max 0.7×5V 0.3×5V 0.7×15V 0.3×15V 3.3 IN+, IN- Low Input Voltage, max 0.3×3.3V IN+,IN- High Input Voltage, min 0.7×3.3V Figure 7 VCC1 scaled input threshold voltage of IN+ and IN- Beginning from the input undervoltage lockout level, threshold levels for IN+ and IN- are scaled to VVCC1. The high input threshold is 70% of VVCC1 and the low input threshold is at 30% of VVCC1. Table 5 Logic Input Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max. IN+,IN- low input voltage VIN+L, VIN-L – – 0.3 × VVCC1 9)3.1 V ≤ VVCC1 ≤ 17 V IN+,IN- high input voltage VIN+H, VIN-H 0.7 × VVCC1 – –
9 Parameter is not subject to production test - verified by design/characterization
EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Electrical Parameters Datasheet 11 Rev. 2.0 2016-07-05
Table 5 Logic Input (Continued) Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max. IN+,IN- low input voltage VIN+L, VIN-L – – 1.5 V VVCC1 = 5.0 V IN+,IN- high input voltage VIN+H, VIN-H 3.5 – – V IN- input current IIN- – 70 200 μ A VVCC1 = 5.0 V, VIN- = GND1 IN+ input current IIN+ – 70 200 μ A VVCC1 = 5.0 V, VIN+ = VVCC1
4.3.3 Gate Driver
Note: minimum Peak current rating valid over temperature range! Table 6 Gate Driver Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max. High level output peak current (source) 1EDI05I12AH 1EDI20I12AH 1EDI20H12AH 1EDI40I12AH 1EDI60I12AH 1EDI60H12AH IOUT+,PEAK 0.5 2.0 2.0 4.0 6.0 6.0 1.3 4.0 4.0 7.5 10.0 10.0 – A 10)IN+ = High, IN- = Low, VVCC2 = 15 V Low level output peak current (sink) 1EDI05I12AH 1EDI20I12AH 1EDI20H12AH 1EDI40I12AH 1EDI60I12AH 1EDI60H12AH IOUT-,PEAK 0.5 2.0 2.0 4.0 6.0 6.0 0.9 3.5 3.5 6.8 9.4 9.4 – A 10)IN+ = Low, IN- = Low, VVCC2 = 15 V 10 specified min. output current is forced; voltage across the device V(VCC2 - OUT+) or V(OUT- - GND2) < VVCC2. EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Electrical Parameters Datasheet 12 Rev. 2.0 2016-07-05
4.3.4 Short Circuit Clamping
Table 7 Short Circuit Clamping Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max. Clamping voltage (OUT+) (VOUT+ - VVCC2) VCLPout – 0.9 1.3 V 11)IN+ = High, IN- = Low, OUT = High IOUT = 500 mA, (pulse test tCLPmax = 10 μ s)
4.3.5 Dynamic Characteristics
Dynamic characteristics are measured with VVCC1 = 5 V and VVCC2 = 15 V. IN+ OUT T PDON 50% 50% T PDOFF 20% 80% T RISE T FALL Figure 8 Propagation Delay, Rise and Fall Time Table 8 Dynamic Characteristics Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max. Input IN to output propagation delay ON TPDON 270 300 330 ns CLOAD = 100 pF VIN+ = 50%, VOUT=50% @25°C 1EDI05I12AH, 1EDI20I12AH, 1EDI40I12AH, 1EDI60I12AH Input IN to output propagation delay OFF TPDOFF 270 300 330 ns Input IN to output propagation delay distortion (TPDOFF - TPDON) TPDISTO -30 5 40 ns Input pulse suppression time IN+, IN- TMININ+, TMININ- 230 240 – ns 11 With respect to GND2. EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Electrical Parameters Datasheet 13 Rev. 2.0 2016-07-05
Table 8 Dynamic Characteristics (Continued) Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max. Input IN to output propagation delay ON TPDON 95 120 142 ns CLOAD = 100 pF VIN+ = 50%, VOUT=50% @25°C 1EDI20H12AH, 1EDI60H12AH Input IN to output propagation delay OFF TPDOFF 105 125 150 ns Input IN to output propagation delay distortion (TPDOFF - TPDON) TPDISTO -35 -5 25 ns Input Pulse Suppressiontime IN+, IN- TMININ+, TMININ- 30 40 – ns Input IN to output propagation delay ON variation due to temp TPDONt – – 14 ns 12)CLOAD = 100 pF VIN+ = 50%, VOUT=50%Input IN to output propagation delay OFF variation due to temp TPDONt – – 14 ns Input IN to output propagation delay distortion variation due to temp (TPDOFF-TPDON) TPDISTOt – – 8 ns Rise time TRISE 5 10 20 ns CLOAD = 1 nF VL20%, VH 80%Fall time TFALL 4 9 19 ns
4.3.6 Active Shut Down
Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max. Active shut down voltage VACTSD – 2.0 2.3 V 13)IOUT-/IOUT-,PEAK=0.1, VCC2 open
12 Parameter is not subject to production test - verified by design/characterization
13 With respect to GND2. EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Electrical Parameters Datasheet 14 Rev. 2.0 2016-07-05
5 Package Outline
0.252 MILLIMETERS Lhcccddd D DIMA2AbcEE1Ne -MIN 8 0.0200.0040.0100.010 2.45MAXINCHES 80.050 BSC0.244 MAX0.096SCALE20 4mm
1.27 BSC
01ISSUE DATE05.11.2015 DOCUMENT NO.Z8B00179262 EUROPEAN PROJECTION REVISION A1 0.200.0040.0080.10 Ĭ L2 0.25 BSC0.010 BSC Figure 9 PG-DSO-8-59 (Plastic (Green) Dual Small Outline Package) EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Package Outline Datasheet 15 Rev. 2.0 2016-07-05
6 Application Notes
6.1 Reference Layout for Thermal Data
Figure 10 Reference Layout for Thermal Data (Copper thickness 35 μ m) This PCB layout represents the reference layout used for the thermal characterization. Pin 4 (GND1) and pin 5 (GND2) require each a ground plane of 100 mm² for achieving maximum power dissipation. The package is built to dissipate most of the heat generated through these pins. The thermal coefficient junction-top (Ψ th,jt) can be used to calculate the junction temperature at a given top case temperature and driver power dissipation:
6.2 Printed Circuit Board Guidelines
The following factors should be taken into account for an optimum PCB layout.
- Sufficient spacing should be kept between high voltage isolated side and low voltage side circuits.
- The same minimum distance between two adjacent high-side isolated parts of the PCB should be maintained to increase the effective isolation and to reduce parasitic coupling.
- In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be kept as short as possible.
Revision History
Page or Item Subjects (major changes since previous revision) Rev. 2.0, 2016-07-05 Logic Input extended description of VCC1 scaled input thresholds Rev. 1.0, 2016-04-20 el. Parameters missing product parameters updated Rev. 0.51, 2015-11-05 all pages change of template, standardized package drawing included Rev. 0.50, 2014-05-05 all pages initial version EiceDRIVER™ 1EDI Compact Single channel IGBT gate driver IC in wide body package Application Notes Datasheet 16 Rev. 2.0 2016-07-05
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