1EDI05I12AF_15 INFINEON
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 22
Technical content
Rev. 2.0, 2014-11-10 Separate output variant for IGBT Single Channel IGBT Gate Driver IC 1EDI05I12AF 1EDI20I12AF 1EDI40I12AF 1EDI60I12AF 1EDI EiceDRIVER™ Compact
81726 Munich, Germany
© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Data Sheet 3 Rev. 2.0, 2014-11-10 Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, Ca nPAK™, CIPOS™, CIPURSE™, COMN EON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRI DGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFE T™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PR O-SIL™, PROFET™, RASIC™, Re verSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEW IS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GO LD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Te chnologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVC o, LLC (Visa Holdings In c.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corp oration. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrot echnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics of MURATA MANUFACTURING CO., MICROWAVE OFFI CE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Open wave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sate llite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Sy mbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. T EKTRONIX™ of Tektroni x Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26
Revision History
Page or Item Subjects (major changes since previous revision) Rev. 2.0, 2014-11-10 all pages Final DS, completion of parameters and editorial changes Rev. 1.01, 2014-10-14 all pages completion of parameters
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Data Sheet 4 Rev. 2.0, 2014-11-10 Table of Contents
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Data Sheet 6 Rev. 2.0, 2014-11-10 List of Tables
1EDI EiceDRIVER™ Compact Single Channel IGBT Gate Driver IC Separate output variant for IGBT Data Sheet 7 Rev. 2.0, 2014-11-10 1O v e r v i e w Main Features
- Single channel isolated IGBT Driver
- Input to output isolation voltage up to 1200 V
- For high voltage power IGBTs
- Up to 10 A typical peak current at rail-to-rail outputs
- Separate source and sink outputs Product Highlights
- Galvanically isolated Coreless Transformer Driver
- Wide input voltage operating range
- Suitable for operation at high ambient temperature Typical Application
- AC and Brushless DC Motor Drives
- High Voltage DC/DC-Conv erter and DC/AC-Inverter
- Induction Heating Re sonant Application
- UPS-Systems
- Welding
- S o l a r
Description
The 1EDI05I12AF, 1EDI20I12AF, 1EDI40I12AF, and 1EDI60I12AF are galvanically isolated single channel IGBT driver in a PG-DSO-8-51 package that provide minimum output currents up to 6 A at separated output pins. The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to support even 3.3 V microcontroller. Data transfer across the isolation barrier is realized by the Coreless Transformer Technology. Every driver family member comes with logic input and driver output under voltage lockout (UVLO) and active shutdown. Product Name Gate Drive Current (min) Package 1EDI05I12AF ±0.5 A PG-DSO-8-51 1EDI20I12AF ±2.0 A PG-DSO-8-51 1EDI40I12AF ±4.0 A PG-DSO-8-51 1EDI60I12AF ±6.0 A PG-DSO-8-51
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Overview Data Sheet 8 Rev. 2.0, 2014-11-10 Figure 1 Typical Application OUT+ OUT+ Control EiceDRIVERTM 1EDIxxI12AF EiceDRIVERTM 1EDIxxI12AF IN+ IN+ IN- IN- GND1 VCC1 VCC2,H VCC2,L GND2,L GND2,HGND1 VCC1 OUT- OUT-
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Block Diagram Data Sheet 9 Rev. 2.0, 2014-11-10
2 Block Diagram
Figure 2 Block Diagram 1EDI05I12AF, 1EDI 20I12AF, 1EDI40I12AF and 1EDI60I12AF IN+ IN- GND1 VCC1 VCC2 OUT- OUT+ GND2 input filter TX UVLO active filter input filter GND1 VCC1 UVLO RX Shoot through protection VCC2
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Pin Configuration and Functionality Data Sheet 10 Rev. 2.0, 2014-11-10
3 Pin Configuration and Functionality
3.1 Pin Configuration
Figure 3 PG-DSO-8-51 (top view)
3.2 Pin Functionality
Logic Input supply voltage of 3.3 V up to 15 V wide operating range. IN+ Non Inverting Driver Input IN+ non-inverted control signal for driver output if IN- is set to low. (Output sourcing active at IN+ = high and IN- = low) Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN+. An internal weak pull-down-resistor favors off-state. Table 1 Pin Configuration Pin No. Name Function
1 VCC1 Positive Logic Supply
2 IN+ Non-Inverted Driver Input (active high)
3 IN- Inverted Driver Input (active low)
4 GND1 Logic Ground
5 VCC2 Positive Power Supply Output Side
6 OUT+ Driver Source Output
7 OUT- Driver Sink Output
8 GND2 Power Ground
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Pin Configuration and Functionality Data Sheet 11 Rev. 2.0, 2014-11-10 IN- Inverting Driver Input IN- inverted control signal for driver output if IN+ is set to high. (Output sourcing active at IN- = low and IN+ = high) Due to internal filtering a mi nimum pulse width is defined to ensure robu stness against noise at IN-. An internal weak pull-up-resistor favors off-state. GND1 Ground connection of input circuit. VCC2 Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close to this supply pin. OUT+ Driver Source Output Driver source output pin to turn on external IGBT. During on-state the driving output is switched to VCC2. Switching of this output is controlled by IN+ and IN-. This output will also be turned off at an UVLO event. During turn off the OUT+ terminal is able to sink approx. 100 mA. OUT- Driver Sink Output Driver sink output pin to turn off external IGBT. During off-state the driving output is switched to GND2. Switching of this output is controlled by IN+ and IN-. In case of UVLO an active shut down keeps the output voltage at a low level. GND2 Reference Ground Reference ground of the output driving circuit. In case of a bipolar supply (positive an d negative voltage referred to IGBT em itter) this pin is connected to the negative supply voltage.
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Functional Description Data Sheet 12 Rev. 2.0, 2014-11-10
4 Functional Description
4.1 Introduction
The 1EDI EiceDRIVER™ Compact is a general purpose IGBT gate driver. Basic cont rol and protection features support fast and easy design of highly reliable systems. The integrated galvanic isolation between control input logic and driving output stage grants additional safety. Its wide input voltage supply range support the direct connection of various signal sources like DSPs and microcontrollers. The separated rail-to-rail driver outputs simplify gate resistor selection, save an external high current bypass diode and enhance dV/dt control. Figure 4 Application Ex ample Bipolar Supply
4.2 Supply
The driver can operate over a wide supply voltage range, either unipolar or bipolar. With bipolar supply the driver is typically operated with a positive voltage of 15 V at VCC2 and a negative voltage of -8V at GND2 relative to the emitter of the IGBT as seen in Figure 4. Negative supply can help to prevent a dynamic turn on due to the additional charge which is generated from IGBT’s input capacitance. For unipolar supply configuration the driver is typically supplied with a posi tive voltage of 15 V at VCC2. In this case, careful evaluation for turn off gate resistor sele ction is recommended to avoid dynamic turn on (see Figure 5). Figure 5 Application Exam ple Unipolar Supply GND1 IN+ IN- VCC1 OUT+ VCC2 GND2 OUT- +5 V SGND IN +15V 10R 1µ100n 3R3 -8V 1µ 0V GND1 IN+ IN- VCC1 OUT+ VCC2 GND2 OUT- +5 V SGND IN +15V 10R 1µ100n 3R 3
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Functional Description Data Sheet 13 Rev. 2.0, 2014-11-10
4.3 Protection Features
4.3.1 Undervoltage Lockout (UVLO)
To ensure correct switching of IGBTs the device is e quipped with an undervoltage lockout for input and output independently. Operation starts only after both VCC levels have increased beyond the respective V UVLOH levels (see also Figure 8). If the power supply voltage VVCC1 of the input chip drops below VUVLOL1 a turn-off signal is sent to the output chip before power-down. The IGBT is switched off an d the signals at IN+ and IN- are ignored until V VCC1 reaches the power-up voltage VUVLOH1 again. If the power supply voltage VVCC2 of the output chip goes down below VUVLOL2 the IGBT is switched off and signals from the input chip are ignored until VVCC2 reaches the power-up voltage VUVLOH2 again. Note: VVCC2 is always referred to GND2 and does not differentiate between unipolar or bipolar supply.
4.3.2 Active Shut-Down
The Active Shut-Down feature ensures a safe IGBT off-state in case the output chip is not connected to the power supply or an under voltage lockout is in effect. The IGBT gate is clamped at OUT- to GND2.
4.3.3 Short Circuit Clamping
During short circuit the IGBT’s gate voltage tends to rise because of the feedb ack via the Miller capacitance. An additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply voltage. A maximum current of 500 mA may be fed back to the supply through this path for 10 μs. If higher currents are expected or tighter clamping is desired external Schottky diodes may be added.
4.4 Non-Inverting and Inverting Inputs
There are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output while IN- is set to low. At inverting mo de IN- controls the driver output wh ile IN+ is set to high, please see Figure 7. A minimum input pulse width is defined to filter occasional glitches.
4.5 Driver Outputs
The output driver section uses MOSFETs to provide a rail-to -rail output. This feature permits that tight control of gate voltage during on-state and short circuit can be mainta ined as long as the driver ’s supply is stable. Due to the low internal voltage drop , switching behaviour of the IGBT is pre dominantly governed by the gate resistor. Furthermore, it reduces the power to be dissipated by the driver.
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Electrical Parameters Data Sheet 14 Rev. 2.0, 2014-11-10
5 Electrical Parameters
5.1 Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND1. Table 2 Absolute Maximum Ratings Parameter Symbol Values Unit Note / Test ConditionMin. Max. Power supply output side VVCC2 -0.3 40 V 1) 1) With respect to GND2. Gate driver output VOUT VGND2-0.3 VVCC2+0.3 V – Positive power supply input side VVCC1 -0.3 18.0 V – Logic input voltages (IN+,IN-) VLogicIN -0.3 18.0 V – Input to output isolation voltage (GND2) VISO -1200 1200 V Junction temperature TJ -40 150 °C – Storage temperature TS -55 150 °C – Power dissipation (Input side) PD, IN –2 5 m W 2) @TA = 25°C 2) See Figure 10 for reference layouts for these thermal data. Thermal performance may change significantly with layout and heat dissipation of components in close proximity. Power dissipation (Output side) PD, OUT – 400 mW 2) @TA = 25°C Thermal resistance (Input side) RTHJA,IN – 145 K/W 2) @TA = 85°C Thermal resistance (Output side) RTHJA,OUT – 165 K/W 2) @TA = 85°C ESD capability VESD,HBM – 2 kV Human Body Model3) 3) According to EIA/JESD22-A114-C (dischar ging a 100 pF capacitor through a 1.5 kΩ series resistor).
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Electrical Parameters Data Sheet 15 Rev. 2.0, 2014-11-10
5.2 Operating Parameters
Note: Within the operating range the IC operates as described in the functional description. Unless otherwise noted all parameters refer to GND1.
5.3 Electrical Characteristics
Note: The electrical characteristics include the spread of values in supply voltages, load and junction temperatures given below. Typical values represent the median values at TA = 25°C. Unless otherwise noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 5 to 7).
5.3.1 Voltage Supply
Table 3 Operating Parameters Parameter Symbol Values Unit Note / Test ConditionMin. Max. Power supply output side VVCC2 13 35 V 1) 1) With respect to GND2. Power supply input side VVCC1 3.1 17 V – Logic input voltages (IN+,IN-) VLogicIN -0.3 17 V – Switching frequency fsw –1 . 0 M H z 2) 3) 2) do not exceed max. power dissipation 3) Parameter is not subject to production test - verified by design/characterization Ambient temperature TA -40 125 °C – Thermal coefficient, junction-top Ψth,jt –4 . 8 K / W 3) @TA = 85°C Common mode transient immunity (CMTI) |dVISO/dt| – 100 kV/ μs 3) @ 1000 V Table 4 Voltage Supply Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. UVLO threshold input chip VUVLOH1 –2 . 8 5 3 . 1 V – VUVLOL1 2.55 2.75 – V – UVLO hysteresis input chip (VUVLOH1 - VUVLOL1) VHYS1 90 100 – mV – UVLO threshold output chip (IGBT supply) VUVLOH2 –1 2 . 0 1 2 . 7 V – VUVLOL2 10.5 11.1 – V – UVLO hysteresis output chip (VUVLOH2 - VUVLOL2) VHYS2 700 850 – mV –
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Electrical Parameters Data Sheet 16 Rev. 2.0, 2014-11-10
5.3.2 Logic Input
Note: Unless stated otherwise VCC1 = 5.0V
5.3.3 Gate Driver
IQ1 –0 . 6 5 1 . 0 m A VVCC1 = 5 V IN+ = High, IN- = Low =>OUT = High Quiescent current output chip IQ2 –1 . 2 2 . 0 m A VVCC2 = 15 V IN+ = High, IN- = Low =>OUT = High Table 5 Logic Input Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. IN+,IN- low input voltage VIN+L,VIN-L – – 30 % of VCC1 IN+,IN- high input voltage VIN+H,VIN-H 7 0 ––% o f V C C 1 IN+,IN- low input voltage VIN+L,VIN-L ––1 . 5 V – IN+,IN- high input voltage VIN+H,VIN-H 3 . 5 ––V – IN- input current IIN- –7 0 2 0 0 μA VIN- = GND1 IN+ input current IIN+,– 7 0 2 0 0 μA VIN+ = VCC1 Table 6 Gate Driver Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. High level output peak current (source) 1EDI05I12AF 1EDI20I12AF 1EDI40I12AF 1EDI60I12AF IOUT+,PEAK 0.5 2.0 4.0 6.0 1.3 4.0 7.5 10.0 IN+ = High, IN- = Low, VVCC2 = 15 V 1) voltage across the device V(VCC2 - OUT+) or V(OUT- - GND2) < VVCC2. Low level output peak current (sink) 1EDI05I12AF 1EDI20I12AF 1EDI40I12AF 1EDI60I12AF IOUT-,PEAK 0.5 2.0 4.0 6.0 0.9 3.5 6.8 9.4 IN+ = Low, IN- = Low, VVCC2 = 15 V Table 4 Voltage Supply (cont’d) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max.
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Electrical Parameters Data Sheet 17 Rev. 2.0, 2014-11-10
5.3.4 Short Circuit Clamping
5.3.5 Dynamic Characteristics
Dynamic characteristics are measured with VVCC1 = 5 V and VVCC2 = 15 V. Table 7 Short Circuit Clamping Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Clamping voltage (OUT+) (VOUT - VVCC2) VCLPout – 0.9 1.3 V IN+ = High, IN- = Low, OUT = High IOUT = 500 mA pulse test, tCLPmax = 10 μs) Table 8 Dynamic Characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input IN to output propa- gation delay ON TPDON 270 300 330 ns CLOAD = 100 pF VIN+ = 50%, VOUT=50% @ 25°CInput IN to output propa- gation delay OFF TPDOFF 270 300 330 ns Input IN to output propa- gation delay distortion (TPDOFF - TPDON) TPDISTO -30 5 40 ns Input pulse suppression IN+, IN- TMININ+, TMININ- 230 240 – ns – Input IN to output propagation delay ON variation due to temp TPDONt ––1 4 n s 1)CLOAD = 100 pF VIN+ = 50%, VOUT=50% 1) The parameter is not subject to production test - verified by design/characterization Input IN to output propagation delay OFF variation due to temp TPDOFFt ––1 4 n s 1)CLOAD = 100 pF VIN+ = 50%, VOUT=50% Input IN to output propagation delay distortion variation due to temp ( TPDOFF-TPDON) TPDISTOt ––8n s 1)CLOAD = 100 pF VIN+ = 50%, VOUT=50% Rise time TRISE 5 1 02 0n s CLOAD = 1 nF VL 20%, VH 80% Fall time TFALL 491 9 n s CLOAD = 1 nF VL 20%, VH 80%
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Electrical Parameters Data Sheet 18 Rev. 2.0, 2014-11-10
5.3.6 Active Shut Down
Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Active shut down voltage VACTSD 1) With reference to GND2 –2 . 2 2 . 5 V IOUT-/IOUT-,PEAK=0.1, VCC2 open
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Package Outlines Data Sheet 20 Rev. 2.0, 2014-11-10
7 Package Outlines
Figure 9 PG-DSO-8-51 (Plastic (Green) Dual Small Outline Package)
1EDI EiceDRIVER™ Compact Separate output variant for IGBT Application Notes Data Sheet 21 Rev. 2.0, 2014-11-10
8 Application Notes
8.1 Reference Layout for Thermal Data
The PCB layout shown in Figure 10 represents the reference layout used for the thermal characterisation. Pin 4 (GND1) and pin 8 (GND2) require each a ground plane of 100 mm² for achieving maximum power dissipation. The Separate output variant for IGBT is conceived to dissipate most of the heat generated through these pins. The thermal coefficient junction-top ( Ψth,jt) can be used to calculate the juncti on temperature at a given top case temperature and driver power dissipation: Figure 10 Reference Layout for Thermal Data (JEDEC 1s0p, 100mm², Copper thickness 35 μm)
8.2 Printed Circuit Board Guidelines
The following factors should be taken into account for an optimum PCB layout.
- Sufficient spacing should be kept between high vo ltage isolated side and low voltage side circuits.
- The same minimum distance between two adjacent high-side isolated parts of the PCB should be maintained to increase the effective isolation and to reduce parasitic coupling.
- In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be kept as short as possible. Tj Ψth jt, PD Ttop+⋅=
Published by Infineon Technologies AG www.infineon.com