18N50H KIA

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Technical content

18A，500V N-CHANNELMOSFET 1. Description TheKIA18N50HN-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhigh voltage,highspeedpowerswitchingapplicationssuchashighefficiencyswitchedmodepowersupplies, activepowerfactorcorrection. 2.Features n RDS(on)=0.25Ω@V GS=10V n Lowgatecharge(typical50nC) n Fastswitchingcapability n Avalancheenergyspecified n Improveddv/dtcapability 3. Pinconfiguration 1of5 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

18A，500V N-CHANNELMOSFET 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisenotes) Parameter Symbol Ratings Units TO220F TO247 Drain-sourcevoltage VDSS 500 V Gate-sourcevoltage VGSS +30 V Draincurrentcontinuous TC=25ºC ID 18.0* 18.0 A TC=100ºC 10.8* 10.8 A Draincurrentpulsed(note1) IDP 72* 72 A Avalancheenergy Repetitive(note1) EAR 23.5 23.5 mJ Singlepulse(note2) EAS 990 990 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25ºC PD 38.5 235 W derateabove25 ºC 0.3 1.88 W/ºC Junctiontemperature TJ +150 ºC Storagetemperature TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 5. Thermalcharacteristics Parameter Symbol Ratings UnitsTO220F TO247 Thermalresistance,junction-ambient RthJA 62.5 40 ºC/WThermalresistance,case-to-sinktyp. RthCS - - Thermalresistance,Junction-case RthJC 3.3 0.52 2of5 Rev1.1JAN2014 KIA SEMICONDUCTORS 18N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS

18A，500V N-CHANNELMOSFET 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 500 - - V Zerogatevoltagedraincurrent IDSS VDS=500V,V GS=0V - - 1 μA VDS=400V,T C=125 ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperaturecoefficient △BVDSS/△TJ ID=250μA TO220F - 0.6 - V/°CTO247 0.5 Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 3.0 - 5.0 V Staticdrain-sourceon-resistance RDS(on) VDS=10V,ID=9A - 0.25 0.32 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 2500 - pF Outputcapacitance Coss - 400 - pF Reversetransfercapacitance Crss - 40 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=250V,ID=18.0A, RG=25Ω(note4,5) - 70 - ns Risetime tr - 190 - ns Turn-offdelaytime td(off) - 100 - ns Falltime tf - 100 - ns Totalgatecharge Qg VDS=400V,ID=18.0A, VGS=10V(note4,5) - 50 - nC Gate-sourcecharge Qgs - 14 - nC Gate-draincharge Qgd - 22 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,IS D=18.0A TO220F - - 1.5 VTO247 1.4 Continuousdrain-sourcecurrent ISD - - 18.0 A Pulseddrain-sourcecurrent ISM - - 72 A Reverserecoverytime trr ISD=18.0A dlSD/dt=100A/μs (note4) - 550 - ns Reverserecoverycharge Qrr - 5.5 - μC Note:1Repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=5.5mH,I AS=18.0A,VDD=50V,RG=25Ω,staringT J=25ºC 3.I SD<18.0A,di/dt<200A/μs,V DD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of5 Rev1.1JAN2014 KIA SEMICONDUCTORS 18N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS

18A，500V N-CHANNELMOSFET 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014 KIA SEMICONDUCTORS 18N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS

18A，500V N-CHANNELMOSFET 5of5 Rev1.1JAN2014 KIA SEMICONDUCTORS 18N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS