18N20A KIA

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18A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 18N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(ON)=0.12Ω@VGS=10V n RoHS compliant n Low on resistance n Low gate charge n Peak current vs pulse width curve 2.Applications n CRT,TV/Monitor n Otherapplications 3.Symbol 1of6 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

18A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 18N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25°C,unlessotherwisespecified) Parameter Symbol Rating Units Drain-sourcevoltage (note*1) VDSS 200 V Continuousdraincurrent ID 18 A ContinuousdraincurrentT C=100 ºC Figure3 A Pulseddraincurrent,V GS@10V (note*2) IDM Figure6 A Powerdissipation PD 156 W Deratingfactorabove25 ºC 1.25 W/ºC Gate-sourcevoltage VGS +30 V SinglepulseavalancheengergyL=10mH EAS 950 mJ Pulsedavalancherating IAS Figure8 Peakdioderecoverydv/dt (note*3) dv/dt 5.0 V/ns Operatingjunctionandstoragetemperature range TJ ,TSTG -55to150 ºC Maximumtemperatureforsoldering Leadsat0.063in(1.6mm)fromcasefor10 seconds Packagebodyfor10seconds TL TPKG 300 260 ºC Caution：Stressesgreaterthanthoselistedinthe ”Absolutemaximumratings ”tablemaycausepermanent Damagetothedevice 5. Thermalcharacteristics Parameter Symbol Min Typ Max Unit Testcondition Junction-case RθJC - - 0.8 ºC/W Watercooledheatsink,P D adjustedfora peakjunctiontemperatureof+150 ºC Junction-ambient RθJA - - 62 ºC/W 1cubicfootchamber,freeair 2of6 Rev1.1JAN2014

18A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 18N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisespecified) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 200 - - V Breakdownvoltagetemperaturecoefficient Figure11 △BVDSS/△TJ Reference25 ℃ ID=250uA - 0.25 - V/ºC Drain-sourceleakagecurrent IDSS VDS=200V,V GS=0V - - 25 μAVDS=160V,V GS=0V TJ=125°C - - 250 Gate-sourceforwardleakage IGSS VGS=30V - - 100 nAGate-sourcereverseleakage VGS=-30V - - -100 Drain-sourceon-resistanceFigure9and10 RDS(on) VGS=10V,ID=10.8A Gatethresholdvoltage,Figure12 VGS(TH) VDS=V GS, ID=250uA 2 - 4 V Forwardtransconductance gfs VDS=15V,I D=18A (note*4) - 18 - S Inputcapacitance Ciss VDS=25V,VGS=0V f=1MHz Figure14 - 1140 - pFOutputcapacitance Coss - 180 - Reversetransfercapacitance Crss - 25 - Turn-ondelaytime td(on) VDD=100V,I D=18A, RG=2.4Ω,VGS=10V - 11 - nsRisetime tr - 33 - Turn-offdelaytime td(off) - 25 - Falltime tf - 7 - Totalgatecharge Qg VDS=100V,I D=18A, VGS=10V Figure15 - 24 - nCGate-sourcecharge Qgs - 7.5 - Gate-drain( “Miller”)charge Qgd - 9.5 - Continuoussourcecurrent （bodybiode ） IS Integralpn-diode inMOSFET - - 18 AMaximumpulsedcurrent （bodybiode ） ISM - - 72 Diodeforwardvoltage VSD IS=18A,V GS=0V - - 1.5 V Reverserecoverytime trr IF=18A,V GS=0V dI/dt=100A/μs - 160 - ns Reverserecoverycharge Qrr - 880 - nC Note:*1.T J=25°Cto150 °C *2.Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature. *3.I SD=18Adi/dt< 100A/μs,V DD < BVDSS，TJ=150°C. *4.Pulsewidth< 380μs,dutycycle< 2%. 3of6 Rev1.1JAN2014

18A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 18N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicaloperatingcharacteristics 4of6 Rev1.1JAN2014

18A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 18N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.1JAN2014

18A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 18N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.1JAN2014