18N10 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 18N10
- FEATURES
- Drain Current I D= 18A@ TC=25℃
- Drain Source Voltage : V DSS= 100V(Min)
- Static Drain-Source On-Resistance : R DS(on) = 0.14Ω(Max)
- Fast Switching
- APPLICATIONS
- Switch regulators
- Switching converters, motor drivers, relay drivers
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Plused 45 A PD Total Dissipation @TC=25℃ 90 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
- THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 18N10
- ELECTRICAL CHARACTERISTICS T C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-voltage IS= 18A ;VGS= 0 1.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 9A 0.14 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=80V; VGS= 0 1 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 1700 pF Crss Reverse Transfer capacitance 300 Coss Output Capacitance 750 tr Rise Time VGS=10V; ID=9A; VDD=50V; RL=50Ω 300 450 ns td(on) Turn-on Delay Time 60 90 tf Fall Time 150 225 td(off) Turn-off Delay Time 150 225 PDF pdfFactory Pro www.fineprint.cn