181RKI40_15 VISHAY

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Document Number: 93699 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 05-Jun-08 1 Phase Control Thyristors (Stud Version), 180 A 180/181RKI Series Vishay High Power Products

FEATURES

  • Hermetic glass-metal seal  International standard case TO-209AB (TO-93)  RoHS compliant  Designed and qualified for industrial level TYPICAL APPLICATIONS  DC motor controls  Controlled DC power supplies  AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 180 A TO-209AB (TO-93) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 180 A TC 80 °C IT(RMS) 285 A ITSM

50 Hz 3800

A

60 Hz 4000

50 Hz 72

60 Hz 66

tq Typical 100 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 180/181RKI 40 400 500 3080 800 900 100 1000 1100

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2 Revision: 05-Jun-08

Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 180 A 80 °C Maximum RMS on-state current I T(RMS) DC at 79 °C case temperature 285 A Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 3800 A t = 8.3 ms 4000 t = 10 ms 100 % VRRM reapplied 3500 t = 8.3 ms 3660 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied kA2s t = 8.3 ms 66 t = 10 ms 100 % VRRM reapplied t = 8.3 ms 56 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 720 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.83 V High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.89 Low level value of on-state slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.92 mΩ High level value of on-state slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.81 Maximum on-state voltage V TM Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V Maximum holding current I H TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current I L 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM

300 A/µs

Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time t q ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/µs, VR = 100 V, dV/dt = 20 V/µs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA

Document Number: 93699 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 05-Jun-08 3 180/181RKI Series Phase Control Thyristors (Stud Version), 180 A Vishay High Power Products Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10 W Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current IGM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum peak positive gate voltage +VGM TJ = TJ maximum, tp ≤ 5 ms V Maximum peak negative gate voltage -VGM 5.0 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units

12 V anode to cathode applied

mATJ = 25 °C 65 150 TJ = 125 °C 35 - DC gate voltage required to trigger V GT TJ = - 40 °C 2.0 - VTJ = 25 °C 1.2 2.5 TJ = 125 °C 0.9 - DC gate current not to trigger I GD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to cathode applied 10 mA DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range TJ - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.15 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04 Mounting torque, ± 10 % Non-lubricated threads 31 (275) N · m (lbf ⋅ in) Lubricated threads 24.5 (210) Approximate weight 280 g Case style See dimensions - link at the end of datasheet TO-209AB (TO-93) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECT ANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.050 0.032 TJ = TJ maximum K/W 120° 0.063 0.059 90° 0.080 0.082 60° 0.118 0.124 30° 0.225 0.228

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Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics 100 110 120 130 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 2 00 Maximum Allowable Case Temperature (°C) 30° 60° 90° 120° 180° Average On-state Current (A) Conduction Angle 181RKI Series R (DC) = 0.15 K/W thJC 100 110 120 130 0 50 100 150 200 250 30 0 DC 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period 181RKI Series R (DC) = 0.15 K/W thJC 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 0.1K/W -Delta R thSA 0.2K/W 0.3K/W

0.6 K/W

0.8 K/W

1 K/ W

1.5K /W

2 K/W

0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 180° 120° 90° 60° 30° RMS Limit Conduction Angle Maximum Average On-state Power Loss (W) Average On-state Current (A) 181RKI Series T = 125°C J 0 2 55 07 5 1 0 0 1 2 5 Maximum Allowable Ambient Temperature (°C) R =0.1K/W -DeltaR thSA 0.2K/W 0.3K/W

0.8 K/ W

1 K/W

1.5 K/W

2 K/ W

180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) 181RKI Series T = 125°C J

Document Number: 93699 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 05-Jun-08 5 180/181RKI Series Phase Control Thyristors (Stud Version), 180 A Vishay High Power Products Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - On-State Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 1500 2000 2500 3000 3500 4000 11 0 1 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 181RKI Series J At Any Rated Load Condition And With Rated V Applied Following Surge. RR M Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1500 2000 2500 3000 3500 4000 0.01 0.1 1 Pulse Train Duration (s) Versus Pulse Train Duration. Control Peak Half Sine Wave On-state Current (A) Initial T = 125°C No Voltage Reapplied RRM J 181RKI Series Maximum Non Repetitive Surge Current Of Conduction May Not Be Maintained Rated V Reapplied 100 1000 10000 0.5 1 1.5 2 2.5 3 T = 25°C J Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125°C J 181RKI Serie s 0.001 0.01 0.1 0.001 0.01 0.1 1 1 0 Square Wave Pulse Duration (s) thJCTransient Thermal Impedance Z (K/W) 181RKI Series Steady State Value R = 0.15 K/W (DC Operation) thJC

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6 Revision: 05-Jun-08

Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 100 0.001 0.01 0.1 1 10 100 100 0 VGD IGD (b) (a) (1) (3) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for b) Recommended load line for Frequency Limited by PG(AV) Tj=25 °C Tj=-40 °C Tj=140 °C (2) (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300µs <=30% rated di/dt: 15V, 40ohms tr<=1 µs, tp=>6µs Device: 181RKI Series rated di/dt: 20V, 30ohms; tr<=0.5 µs, tp=>6µs (4) -I T(AV) rated average output current (rounded/10) - Voltage code x 10 = V RRM (see Voltage Ratings table) - Thyristor - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) Device code 13 24 18 1 RKI 100 LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95077

Document Number: 95077 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 19-May-10 1 TO-209AB (TO-93) Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters (inches) Fast-on terminals White gate Red shrink Red cathode Red silicon rubber C.S. 0.51 mm2 (0.0008 s.i.) Ø 4.3 (0.17) 19 (0.75) MAX. Ø 8.5 (0.33) Glass metal seal Ø 28.5 (1.12) MAX. SW 32 C.S. 35 mm2 (0.054 s.i.) Flexible lead 3/4"-16UNF-2A White shrink AMP. 280000-1 REF-250 238.5 ± 10 (9.39 ± 0.39) 35 (1.38) MAX. 21 (0.83) MAX. 28.5 (1.12) MAX. 16 (0.63) MAX. 75 (2.95) MIN. 213.5 ± 10 (8.41 ± 0.39) 23 MIN. 4 MAX. 0° to 15° 38 MAX.

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