16TTS12S ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 3
Technical content
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FEATURES
- Glass passivatedjunctions
- VDRM/VRRM :1200V
APPLICATIONS
- Typicalapplications are ininputrectification (softstart) andtheseproducts are designedto be usedwith Vishay HPPinputdiodes,switchesand outputrectifiers which areavailablein identicalpackageoutlines ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM RepetitivePeakOff-stateVoltage 1200 V VRRM RepetitivePeakReverseVoltage 1200 V IT(AV) On-stateCurrentTc=95℃ 10 A ITSM SurgeNon-repetitiveOn-stateCurrent,Tc=110℃ 200 A PG(AV) AverageGatePower 2.0 W di/dt RepetitiveRateofRiseofOn-stateCurrentafterTriggering 150 A/us I2t I2tforfusing 10mssinepulse,ratedVRRMapplied 144 A2S 10mssinepulse,novoltagereapplied 200 IGM PeakGateCurrent,TJ=125℃ 1.5 A Tj OperatingJunctionTemperature -40~+125 ℃ Tstg StorageTemperature -40~+125 ℃
www.iscsemi.com ELECTRICALCHARACTERISTICS (TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM RepetitivePeakReverseCurrent VRRM=1200V,TJ=25℃ -- -- 0.5 mA IDRM RepetitivePeakOff-stateCurrent VDRM=1200V,TJ=125℃ -- -- 10 mA VTM On-stateVoltage ITM=10A;TJ=25℃ -- -- 1.4 V IGT Gate-triggerCurrent VD=6V;TJ=25℃ -- -- 60 mA VGT Gate-triggerVoltage VD=6V;TJ=25℃ -- -- 2.0 V IH HoldingCurrent IT=1A -- -- 100 mA dv/dt CriticalRateofRiseofOff-state Voltage VD=VDRM,TJ=100℃ -- -- 500 V/us Rth(j-c) ThermalResistanceJunctionto MountingBase Infreeair -- 1.3 -- ℃/W PACKAGEOUTLINE（Dimensionsinmm）
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