16T06AI-SW

16T06A-BW NELLSEMI

Document overview

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Technical content

Features

IT(RMS) V /VDRM RRM IGT(Q1) 16 A V mA5 to 50 to SEMICONDUCTOR 16T Series RoHS RoHS TRIACs, 16A GA2 1 2 3 TO-220AB (lnsulated) (16Txx AI) TO-220AB (non-Insulated) (16Txx A)

• Medium current Triac
• Low thermal resistance with clip bonding
• Low thermal resistance insulation ceramic
• High commutation (4Q) or very high
• RoHS compliant, UL certified (File NO:E320098)
• Insulated tab (16TxxAI series, rated at 2500 VRMS)
• Snubberless versions (With Suffix W) especially recommended for use on inductive loads, because of their high commutation performances
• On/off or phase angle function in applications such as static relays, light dimmers and appliance motor speed controllers PARAMETER IT(RMS) V VDRM RRM/ I (Snubberless)GT Device summary SYMBOL (1)16TxxAI 16TxxA I (logic level)GT I (standard)GT On-state RMS current Repetitive peak off-state voltage Triggering gate current Triggering gate current Triggering gate current 600/800/1000 600/800/1000 Page 1 of 7 commutation (3Q) capability for insulated 16T TO-263 (D²PAK) (16Txx H) Available either in through-hole or surface-mount packages, the 16TxxA and 16TxxAl triacs series are suitable for general purpose mains power AC switcging

Description

Note 1: Insulated www.nellsemi.com

I (1)GT I - II - III VGT I - II - III VGD I - II - III (2)IH MAX. I - III MAX. mA II (2)dV/dt MIN. (dI/dt)c (2) MIN. A/ms- IL MAX. MIN. V = 12 V, R = 33ΩD L V = V , R = 3.3KΩD DRM L T = 125°Cj I = 500 mAT I = 1.2 IG GT V = 67% V gate open ,T = 125°CD DRM j, (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber T = 125°Cj T = 125°Cj T = 125°Cj MAX. 10 50 1.3 0.2 15 55 25 70 30 80 40 1000 8.5 14- mA V V mA V/µs TEST CONDITIONS QUADRANTSYMBOL SW BW 500 8.5 CW SNUBBERLESS and Logic level (3 quadrants) SEMICONDUCTOR 16T Series RoHS RoHS Page 2 of 7 (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS A/µs UNIT A 2A s ºC A A W - 40 to + 150 - 40 to + 125 VALUE 128 160 168t = 16.7 ms T =125ºCj T =125ºCj t = 20 ms TEST CONDITIONS T = 110ºCc T =125ºCj F =50 Hz F =60 Hz t = 10 msp F =100 Hz T =20 µsp SYMBOL IT(RMS) ITSM dI/dt PG(AV) I t2 IGM Tstg Tj ABSOLUTE MAXIMUM RATINGS RMS on-state current (full sine wave) Critical rate of rise of on-state current Operating junction temperature range Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j Average gate power dissipation Storage temperature range 2I t Value for fusing I = 2xl , t ≤100nsG GT r Peak gate current PARAMETER T = 86ºCc TO-220/TO-263 TO-220insulate Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. www.nellsemi.com

SEMICONDUCTOR 16T Series RoHS RoHS THERMAL RESISTANCE Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient 2.1 °C/W °C/W UNITVALUESYMBOL TO-220AB, D²PAK TO-220AB Insulated D²PAK TO-220AB Insulated, TO-220AB 1.2 45(1) S =1cm² Note 1: S=Copper surface under tab Page 3 of 7 V (2)TM MAX. Vt0(2) Threshold voltage MAX. Dynamic resistance MAX. IDRM IRRM V = VR RRM MAX. mA Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. I = 22.5 A, TM t = 380 µsP T = 125°Cj T = 25°Cj T = 125°Cj T = 125°Cj T = 25°Cj 1.55 0.85 V V µA mΩ STATIC CHARACTERISTICS UNITVALUETEST CONDITIONS SYMBOL (2)Rd V = VD DRM MIN.(dI/dt)c = 7 A/ms, T = 125°Cj V/µs5 10(2)(dV/dt)c MIN.V = 67% V , gate open, T = 125°CD DRM j V/µs200 400(2)dV/d t II 80 120 MAX. mAI = 1.2 IG GTIL I - III - IV 40 60 (2)IH MAX.I = 500 mAT mA5025 ALLV = V , R = 3.3KΩ, D DRM L T = 125°Cj 0.2 VVGD ALL 1.3 VVGT V = 12 V, R = 33ΩD L IV 50 100 mAI (1)GT I - II - III MAX. 25 50 C B QUADRANT UNITTEST CONDITIONS SYMBOL 16Txxxx Standard (4 quadrants) (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY PACKAGE 600 V 50 mA 50 mA 25 mA 35 mA 10 mA 1000 V 16TxxA-B/1 6TxxAl-B 16TxxA-BW/16TxxAl-BW 16TxxA-C/16TxxAl-C 16TxxA-CW/16TxxAl-CW 16TxxA-SW/16TxxAl-SW TYPE TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB Standard Snubberless Standard Snubberless Logic level V V V V V VV VV V 800 V V V V V V 16TxxH-SW 16TxxH-CW VV V VV V 10 mA 35 mA Snubberless D²PAK D²PAK Logic level www.nellsemi.com

ORDERING INFORMATION SCHEME Triac series Current Voltage 16 = 16A 06 = 600V 08 = 800V B = 50mA Standard BW = 50mA Snubberless C = 25mA Standard CW = 35mA Snubberless SW = 10mA Logic Level

16 T 06 A - BW

10 = 1000V A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) SEMICONDUCTOR 16T Series RoHS RoHS H = TO-263 (D²PAK) I Sensitivity GT Page 4 of 7 Note: xx = voltage, yy = sensitivity

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube 16TxxAI-yy 16TxxAI-yy 2.3g 50 Tube 16TxxH-yy 16TxxH-yy 2TO-236(D PAK) 2.0g 50 TO-220AB (insulated) Tube www.nellsemi.com

P(W) I (A)T(RMS) T (°C) C 3.0 3.5 4.0 K=[Z /R ]th th D²PAKprinted circuit board Fr4, copper thickness:35 µm 1E-2 I (A)T(RMS) 100 200 0.5 1.51.0 100 Non repetitive Tc(°c) SEMICONDUCTOR 16T Series RoHS RoHS IT(RMS)(A) 0 842 6 10 12 14 16 TO-263AB 0 25 50 75 100 125 (S=1cm²) 2.5 1.5 2.0 1.0 0.5 0.0 0 25 50 75 100 125 tp(s) Zth(j-c) Zth(j-a) 1E-1 1E+0 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 TO-220AB insulated V TM (V) Tj=25°c Tj=Tjmax. Tj max. Vto=0.85V Rd=25mΩ Tjinitial=25°C Repetitive Tc=85°C Number of cycles I (A)TM I (A)TSM 120 140 160 180 1 10 100 1000 Page 5 of 7 One cycle t=20ms Fig.1 Maximum power dissipation versus on-state rms current (full cycle) Fig.2 On-state rms current versus case temperature (full cycle) Fig.3 On-state current versus ambient temperature (full cycle) Fig.4 Relative variation of thermal impedance versus pulse duration Fig.5 On-state characteristics (maximum values) Fig.6 surge peak on- state current versus number of cycles www.nellsemi.com

0.0 0.01 0.10 1.00 10.00 0.5 1.0 1.5 2.0 2.5 IH&IL Tj(°C) IGT 1.00.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dV/dt)c (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c C B (dI/dt)c [T ] / pecified]j (dI/dt)c [T sj T (°C) j SEMICONDUCTOR 16T Series RoHS RoHS dl/dt limitation: 50A/µs lTSM l²t Tj initial=25°C I (A), I²t(A²S)TSM holding current and latching current versus junction temperature (typical values) -40 -20 0 20 40 60 80 100 120 140 SW CW/BW snubberless and Logic level types standard types 10.0 100.0 0 25 50 75 100 125 D²PAK S(cm²) 0 4 8 12 16 20 24 28 32 36 40 Page 6 of 7 IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C] Rth(j-a)(°C/W) Fig7. Non-repetitive surge peak on-state current for a sinusoidal Fig.8 Relative variation of gate trigger current Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) Fig.10 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) Fig.11 D²PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit FR4, copper thickness: 35µm www.nellsemi.com tp(ms) pulse with width tp<10ms and corresponding value of l²t

SEMICONDUCTOR 16T Series RoHS RoHS Page 7 of 7 www.nellsemi.com Case Style 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021)