16T NELLSEMI

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

IT(RMS) V /VDRM RRM IGT(Q1) 16 A V mA5 to 50 600 to 1000 SEMICONDUCTOR 16T Series RoHS RoHS TRIACs, 16A

  • Medium current Triac
  • Low thermal resistance with clip bonding
  • Low thermal resistance insulation ceramic for
  • High commutation (4Q) or very high
  • RoHS compliant, UL certified (File NO:E320098)
  • Insulated tab (16TxxAI series, rated at 2500 V ) RMS
  • Snubberless versions (With Suffix W) especially recommended for use on inductive loads, because of their high commutation performances
  • On/off or phase angle function in applications such as static relays, light dimmers and appliance motor speed controllers PARAMETER Device summary SYMBOL (1)16TxxAI 16TxxA commutation (3Q) capability insulated 16T Available either in through-hole or surface-mount packages, the 16TxxA and 16TxxAl triacs series are suitable for general purpose mains power AC switcging

Description

Note 1: Insulated 1 2 3 TO-220AB (lnsulated) (16TxxAI) TO-220AB (non-Insulated) (16TxxA) G 2TO-263 (D PAK) (16TxxH) TO-220F (ITO-220AB) (16TxxAF) Triggering gate current Triggering gate current Triggering gate current Repetitive peak off-state voltage On-state RMS currentlT(RMS) V /VDRM RRM I (Snubberless)GT I (Logic level)GT I (Standard)GT 600/800/1000 600/800/1000 www.nellsemi.com Page 1 of 7 G A1A2 2(A2) 3(G) 1(A1)

I (1)GT I - II - III VGT I - II - III VGD I - II - III (2)IH MAX. I - III MAX. mA II (2)dV/dt MIN. (dI/dt)c (2) MIN. A/ms- IL MAX. MIN. V = 12 V, R = 33ΩD L V = V , R = 3.3KΩD DRM L T = 125°Cj I = 500 mAT I = 1.2 IG GT V = 67% V gate open ,T = 125°CD DRM j, (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber T = 125°Cj T = 125°Cj T = 125°Cj MAX. 10 50 1.3 0.2 15 55 25 70 30 80 40 1000 8.5 14- mA V V mA V/µs TEST CONDITIONS QUADRANTSYMBOL SW BW 500 8.5 CW SNUBBERLESS and Logic level (3 quadrants) SEMICONDUCTOR 16T Series RoHS RoHS (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS A/µs UNIT A 2A s ºC A A W - 40 to 150 - 40 to 125 VALUE 128 160 168t = 16.7 ms T =125ºCj T =125ºCj t = 20 ms TEST CONDITIONS T = 100ºCc T =125ºCj F =50 Hz F =60 Hz t = 10 msp F =100 Hz T =20 µsp SYMBOL IT(RMS) ITSM dI/dt PG(AV) I t2 IGM Tstg Tj ABSOLUTE MAXIMUM RATINGS RMS on-state current (full sine wave) Critical rate of rise of on-state current Operating junction temperature range Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j Average gate power dissipation Storage temperature range 2I t Value for fusing I = 2xl , t ≤100nsG GT r Peak gate current PARAMETER T = 86ºCc TO-220/TO-263 TO-220insulate/TO-220F (ITO-220AB) Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. MIN.(dI/dt)c = 7 A/ms, T = 125°Cj V/µs5 10(2)(dV/dt)c MIN.V = 67% V , gate open, T = 125°CD DRM j V/µs200 400(2)dV/d t II 80 120 MAX. mAI = 1.2 IG GTIL I - III - IV 40 60 (2)IH MAX.I = 500 mAT mA5025 ALLV = V , R = 3.3KΩ, D DRM L T = 125°Cj 0.2 VVGD ALL 1.3 VVGT V = 12 V, R = 33ΩD L IV 50 100 mAI (1)GT I - II - III MAX. 25 50 C B QUADRANT UNITTEST CONDITIONS SYMBOL 16Txxxx Standard (4 quadrants) (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS www.nellsemi.com Page 2 of 7

SEMICONDUCTOR 16T Series RoHS RoHS THERMAL RESISTANCE Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient 2.1 °C/W °C/W UNITVALUESYMBOL TO-220AB, D²PAK TO-220AB Insulated, TO-220F D²PAK TO-220AB Insulated, TO-220AB, TO-220F 1.2 45(1) S =1cm² Note 1: S=Copper surface under tab V (2)TM MAX. Vt0(2) Threshold voltage MAX. Dynamic resistance MAX. IDRM IRRM V = VR RRM MAX. mA Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. I = 22.5 A, TM t = 380 µsP T = 125°Cj T = 25°Cj T = 125°Cj T = 125°Cj T = 25°Cj 1.55 0.85 V V µA mΩ STATIC CHARACTERISTICS UNITVALUETEST CONDITIONS SYMBOL (2)Rd V = VD DRM PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY PACKAGE 600 V 50 mA 50 mA 25 mA 35 mA 10 mA 1000 V 16TxxA-B/1 6TxxAl-B 16TxxA-BW/16TxxAl-BW 16TxxA-C/16TxxAl-C 16TxxA-CW/16TxxAl-CW 16TxxA-SW/16TxxAl-SW TYPE TO-220AB Standard Snubberless Standard Snubberless Logic level V V V V V VV VV V 800 V V V V V V 16TxxH-B 16TxxH-C VV V VV V 50 mA 25 mA Standard D²PAK Standard 10 mA 35 mA 50 mA 50 mA 25 mA 16TxxH-SW 16TxxH-CW 16TxxH-BW 16TxxAF-B 16TxxAF-C Logic level Snubberless Snubberless Standard Standard V V V V V VV VV V V V V V V 16TxxAF-SW 16TxxAF-CW VV V VV V 10 mA 35 mA Snubberless Logic level 6TxxAF-BW VV V 50 mA Snubberless TO-220F (ITO-220AB) Note: xx = voltage, yy = sensitivity

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube 16TxxAI-yy 16TxxAI-yy 2.3g 50 Tube 16TxxH-yy 16TxxH-yy 2TO-236(D PAK) 2.0g 50 TO-220AB (insulated) Tube 16TxxAF-yy 16TxxAF-yy TO-220F(ITO-220AB) 2.5g 50 Tube www.nellsemi.com Page 3 of 7

ORDERING INFORMATION SCHEME Triac series Current Voltage 16 = 16A 06 = 600V 08 = 800V B = 50mA Standard BW = 50mA Snubberless C = 25mA Standard CW = 35mA Snubberless SW = 10mA Logic Level

16 T 06 A - BW

10 = 1000V A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) SEMICONDUCTOR 16T Series RoHS RoHS H = TO-263 (D²PAK) I Sensitivity GT AF = TO-220F ( ITO-220AB, insulated) P(W) I (A)T(RMS) 3.0 3.5 4.0 K=[Z /R ]th th 1E-2 0 842 6 10 12 14 16 125 2.5 1.5 2.0 1.0 0.5 0.0 0 25 50 75 100 125 1E-1 1E+0 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.1 Maximum power dissipation versus on-state rms current (full cycle) Fig.2 On-state rms current versus case (full cycle) temperature Fig.3 On-state current versus ambient (full cycle) temperature Fig.4 Relative variation of thermal impedance versus pulse duration www.nellsemi.com Page 4 of 7 I (A)T(RMS) ITO-220AB ( ) TO-220AB insulated TO-220AB TO-263 T (°C)C I (A)T(RMS)

2 D PAK

2(S=1cm ) T (°C)c printed circuit board Fr4, copper thickness:35 µm Zth(j-c) Zth(j-a) tp(s)

0.5 1.51.0 100 SEMICONDUCTOR 16T Series RoHS RoHS I (A)TSM 120 140 160 180 1 10 100 1000 Fig.5 On-state characteristics (maximum values) Fig.6 surge peak on- state current versus of cycles number 3000 100 1000 0.0 0.01 0.10 1.00 10.00 0.5 1.0 1.5 2.0 2.5 1.00.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 l²t I (A), I²t(A²S)TSM -40 -20 0 20 40 60 80 100 120 140 10.0 100.0 0 25 50 75 100 125 IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C] Fig7. Non-repetitive surge peak on-state current for a sinusoidal Fig.8 Relative variation of gate trigger current Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) Fig.10 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (dI/dt)c [T ] (dl/dt)c [j T specified ]j (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c www.nellsemi.com Page 5 of 7 I (A) T max.j V = 0.85 Vto R = 25 mΩd T =T maxj j T =25°Cj V (V)TM One cycle t=20ms Repetitive Tc=85°C Number of cycles Non repetitive T initial=25°Cj pulse with width tp<10ms and corresponding value of l²t ITSM dI/dt limitation: 50A/µs T initial=25°Cj T (°C)j I & IH L IGT (dV/dt)c (V/µs) SW C B CW/BW snubberless and Logic level types standard types T (°C) j

SEMICONDUCTOR 16T Series RoHS RoHS 0 4 8 12 16 20 24 28 32 36 40 Rth(j-a)(°C/W) Fig.11 D²PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit FR4, copper thickness: 35µm Case Style 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021) www.nellsemi.com Page 6 of 7 S(cm²) D²PAK 2(A2) 3(G) 1(A1)

SEMICONDUCTOR 16T Series RoHS RoHS Case Style ITO-220AB 1 3 3.3 3.1 13.7 13.5 All dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 TYP 0.9 0.72.54 TYP 16.4 15.4 7.1 6.7 3.7 3.2 10.6 10.4 4.8 4.6 10° 2.85 2.65 3.4 3.1 www.nellsemi.com Page 7 of 7 2(A2) 3(G) 1(A1)