16N60

16N60 NELLSEMI

Document overview

• Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, server/telecom power, FPD TV power, ATX power, and industrial power applications. The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. Low reverse transfer capacitance (C = 5pF typical)RSS R = 0.17Ω @ V = 10V DS(ON) GS Ultra low gate charge(52.3nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY I (A)D 16 V (V)DSS 600 0.17 @ V = 10VGS 52.3 R (Ω)DS(ON) Q (nC) max.G N-Channel Power MOSFET (16A, 600Volts) TO-220AB (16 )N60A D

DESCRIPTION

FEATURES

D (Drain) G (Gate) S (Source) TO-3PB (16N60B) www.nellsemi.com Page 1 of 10 TO-220F (16 F)N60A G D G D S

UNITMin. 0.5 0.93 0.24 62.5 3.5 THERMAL RESISTANCE TO-220AB/TO-3PB TO-220F TO-3PB PARAMETER Thermal resistance, junction to ambient Thermal resistance, junction to case TO-3PB SYMBOL Rth(j-c) Rth(j-a) Rth(c-s) Thermal resistance, case to heatsink Typ. Max. ºC/W www.nellsemi.com Page 2 of 10 16N60 Series UNIT V/ns V W/ ºC A mJ ºC -55 to 150 VALUE 10.1 600 ±30 5.3 600 1.08 100 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C T =25°C to 150°CJ TEST CONDITIONS R =20KΩGS T =25°C C T =100°C C Operation junction temperature Storage temperature Single pulse avalanche energy(Note 2) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current MOSFET dv/dt ruggedness(Note 3) Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . .lbf in (N m) 300Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1. . Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 1) 1.34 T =25°C C 2.I = 5.3A, V = 50V, R = 25Ω, starting T =25°C.AS DD GS J 355 Repetitive avalanche energy(Note 1)EAR 3.I ≤ 16A, di/dt ≤ 200A/µs, V = 380V, starting T =25°C.SD DD J 0.29 Derate above 25 C° I =16A, R =50Ω, V =10V AR GS GS EAS I =5.3A, L=7.1mHAS TO-220AB/TO-3PB TO-220F 20Peak diode recovery dv/dt(Note 3) WT =25°C C TO-220AB/TO-3PB TO-220F Total power dissipation 134.4 35.7 TO-220AB/TO-220F TO-220AB/TO220F

www.nellsemi.com Page 3 of 10 16N60 Series UNIT V ns μA pF nC 20.2 Max. 100 600 -100 100 0.73 1630 15.8 15.5 60.3 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 1mA, D V = 0VGS TEST CONDITIONS I = 1mA, D V =VDS GS V =600V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 6.7Gate to source charge Drain to source leakage currentIDSS COSS CRSS td(ON) td(OFF) V/ºC Ω nA T =125°C C Typ.Min. 52.3 V = 380V, DD (Note1,2) V = 10VGS I = 8A, R = 4.7Ω D GS V = 100V, V = 0V, f =1MHzDS GS V = -30V, V = 0VGS DS V = 30V, V = 0VGS DS Forward transconductancegfs V = 40VDS l = 8A D Equivalent series resistance (G-S)ESR 2.9 V =480V, V =0V DS GS S OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS 2170 C eff.oss Effective output capacitance V = 0 to 480V, V = 0VDS GS 176 SWITCHING CHARACTERISTICS 50.4 41.6 130.6 40.2 V = 380V, DD (Note1,2) V = 10VGS I = 8A, D 0.17 0.199Static drain to source on-state resistanceRDS(ON) V = 10V, l = 8A GS D

2 V4V =V , I =250μA GS DS DGate threshold voltageVGS(TH)

Output capacitanceCOSS V = 380V, V = 0V, f =1MHzDS GS 40 Gate to drain charge (Miller charge)QGD Drain open 12.9 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C SYMBOL Is (IsD) VSD ISM trr Qrr Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. Reverse recovery time Pulsed source current Continuous source to drain current Diode forward voltage Reverse recovery charge PARAMETER I = 8A, V = 0VSD GS Integral reverse P-N junction diode in the MOSFET I = 8A, V = 0V, SD GS dI /dt = 100A/µs F TEST CONDITIONS D (Drain) G (Gate) S (Source) Min. Typ. 319 4.4 Max. 1.2 UNIT V μC A ns Ω

ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 16 = 16A 60 = 600V

16 N 60 B

A = TO-220AB AF = TO-220F B = TO-3P(B) N = N-Channel ■ Gate charge test circuit & waveform (D.U.T) VGS 1mA VDS VGS 10V Qg Qgs Qgd www.nellsemi.com Page 4 of 10 16N60 Series RL Charge

D.U.T. RL VDS VGS RG VDD VDS VGS 90% 10% td(ON) tr td(OFF) tf VDD Time BVDSS 10V ton toff 10V RG VDS lD L D.U.T. lAS VDD l (t)D E = AS

2 L lAS

V (t)DS ■ PEAK DIODE RECOVERY dv/dt TEST CIRCUIT & WAVEFORMS ■ RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORM ■ UNCLAMPED INDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS D.U.T. Driver Same Type as DUT dv/dt controlled by R* G l controlled by pulse period* SD VDD VDS VGS RG ISD VGS (Driver) lSD (D.U.T) (D.U.T) VDS 10V VDD Gate Pulse Width Gate Pulse PeriodD= l , Body Diode Forward CurrentFM lRM di/dt Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop tp L www.nellsemi.com Page 5 of 10 16N60 Series

Fig.1 On-State characteristics Drain-Source voltage, V (V)DS Gate-Source voltage, V (V)GS Fig.4 Body diode forward voltage variation vs. Source current and Temperatue Drain Current, l (A) D Reverse drain current, l (A)S Drain current, l (A)D Body diode forward voltage, V (V)SD Capacitance (pF) Drain-Source voltage, V (V)DS Fig.3 On-Resistance variation vs. drain current and gate voltage Drain-Source On-Resistance, R (Ω)DS(ON) Drain current, I (A)D Fig.2 Transfer characteristics ■ TYPICAL CHARACTERISTICS 100 101 20 2 4 6 8 0.3 0.2 0.1 0 10 20 30 40 50 0.4 0.6 Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics Gate-Source voltage,V (V)GS 1000 7500 5000 2500 0 10 20 30 40 50 Total gate charge, Q (nC)G 100 10.1 10 1.4 1.6 www.nellsemi.com Page 6 of 10 16N60 Series 0.1 0.1 150ºC 25ºC -55ºC Note: 1. V = 20VDS 2. 250µs Pulse Test 0.5 V = 10VGS V = 20VGS Note: T = 25°CC 150ºC 25ºC Note: 1. V = 0VGS 2. 250µs Pulse Test 100 600 Coss Ciss Crss C = ( )iss C +C C = shorted gs gd ds C = C +Coss ds gd C = Crss gd Note: 1. V = 0VGS 2. f = 1 MHz V = 120VDS V = 380VDS V = 480VDS Note: l = 8AD 100 0.1 VGS Top: 15V 10V 4.5V Note: 2. T 250µs Pulse Test = 25°CC

Fig.7 Breakdown voltage variation vs. Temperature Fig.8 On-Resistance variation vs. Temperature Fig.9 Maximum safe operating area ( )16N60A/16N60B Fig.10 Maximum safe operating area (16N60AF) Drain-Source breakdown voltage, BV (Normalized) Dss Drain-Source On-Resistance, R Ds(ON) (Normalized) Drain current, l (A)D Drain current, l (A)D 1.2 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 200 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 Junction temperature, T (°C)j Junction temperature, T (°C)J Drain-Source voltage, V (V)DS Nell High Power Products Drain-Source voltage, V (V)DS Fig.11 Maximum drain current vs. Case temperature 25 50 75 100 125 150 Drain current, l (A)D Case temperature, T (°C)J 200-100 www.nellsemi.com Page 7 of 10 16N60 Series Note: 1. V = 0VGS 2. l = 250μAD Note: 1. V = 0VGS 2. l = 1mAD Note: 1. V = 10VGS 2. l = 8AD Operation in This Area by RDS (on) is Limited DC 10ms 1ms 100μs 20μs Note: 1. T = 25 CC 2. T = 150°CJ 3. Sing Pulse 100 0.1 0.01 1 10 100 1000 Operation in This Area by RDS (on) is Limited 10ms 1ms 100μs Note: 1. T = 25 CC 2. T = 150°CJ 3. Sing Pulse 20μs DC 100 0.1 0.01 1 10 100 1000

Thermal response, R (°C/W)th(j-c) -410-510 -410-510 Thermal response, R (°C/W)th(j-c) Fig.11-1 Transient thermal response curve for 16N60B & 16N60A Fig.11-2 Transient thermal response curve for 16N60AF Rectangular pulse duration (sec) Rectangular pulse duration (sec) www.nellsemi.com Page 8 of 10 16N60 Series PDM Notes: 2. Duty factor, D = t / t1 2 3. T - T = P * R (t) JM C DM th(j-c) 1. Rth(j-c) (t) = 0.93°C/W Max. PDM Notes: 2. Duty factor, D = t / t1 2 3. T - T = P * R (t) JM C DM th(j-c) 1. Rth(j-c) (t) = 3.5°C/W Max. 0.1 0.01 0.005 0.1 0.01 10-3 10-2 -110 1 10-3 10-2 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse D = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse 10-1 1 10 100

2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB TO-3P(B) All dimensions in millimeters(inches) 15.6±0.4 9.6 2.04.0 19.9±0.320.0 min 4.0 max 2 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 Φ3.2 0,1± 1.8 5.0 .±0 2 4.8±0.2 2.0±0.1 0.65 +0.2 -0.1 1.4 G D S 1 2 3 All dimensions in millimeters(inches) D (Drain) G (Gate) S (Source) D (Drain) G (Gate) S (Source) www.nellsemi.com Page 9 of 10 16N60 Series

www.nellsemi.com Page 10 of 10 Case Style TO-220F 1 3 3.3 3.1 13.7 13.5 All dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 TYP 0.9 0.72.54 TYP 16.4 15.4 7.1 6.7 3.7 3.2 10.6 10.4 4.8 4.6 10° 2.85 2.65 3.4 3.1 RoHS RoHS Nell High Power Products D (Drain) G (Gate) S (Source) 16N60 Series