16N50H KIA

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16A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 16N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description ThispowerMOSFETisproducedusingKIAadvancedplanarstripeDMOStechnology.Thisadvanced technologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitching performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices arewellsuitedforhighefficiencyswitchedmodepowersupplies,activepowerfactorcorrectionbasedon halfbridgetopology. 2.Features n RDS(on)=0.32Ω@ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pinconfiguration 1of6 Rev1.3SEP2014 Pin Function

1 Gate

2 Drain

3 Source

16A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 16N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisenotes) Parameter Symbol Ratings Units TO-220F TO-3P TO-247 Drain-sourcevoltage VDSS 500 V Gate-sourcevoltage VGSS +30 V Draincurrentcontinuous TC=25ºC ID 16* 16 16 A TC=100ºC 9.6 A Draincurrentpulsed(note1) IDm 64 A Avalancheenergy Repetitive(note1) EAR 20 mJ Singlepulse(note2) EAS 853 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25ºC PD 38.5 205 205 W derateabove25 ºC 0.3 2.1 2.1 W/ºC Junctiontemperature TJ +150 ºC Storagetemperature TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 5. Thermalcharacteristics Parameter Symbol TO-220F TO-3P TO-247 Units Thermalresistance,junction-ambient RthJA 62.5 42 40 ºC/WThermalresistance,case-to-sinktyp. RthCS - 0.25 0.24 Thermalresistance,Junction-case RthJC 3.3 0.62 0.62 2of6 Rev1.3SEP2014

16A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 16N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Units Offcharacteristics Zerogatevoltagedraincurrent IDSS VDS=500V,V GS=0V - - 1 μA VDS=400V,T C=125 ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperaturecoefficient △BVDSS/△TJ ID=250μA - 0.6 - V/°C Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 3.0 4.0 5.0 V Staticdrain-sourceon-resistance RDS(on) VDS=10V,ID=8.0A - 0.32 0.38 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 2200 - pF Outputcapacitance Coss - 350 - pF Reversetransfercapacitance Crss - 35 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=250V,ID=16.0A, RG=25Ω(note4,5) - 50 - ns Risetime tr - 170 - ns Turn-offdelaytime td(off) - 90 - ns Falltime tf - 80 - ns Totalgatecharge Qg VDS=400V,ID=16.0A, VGS=10V(note4,5) - 45 - nC Gate-sourcecharge Qgs - 12 - nC Gate-draincharge Qgd - 20 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ID=16.0A - - 1.5 V Continuousdrain-sourcecurrent ISD - - 16 A Pulseddrain-sourcecurrent ISM - - 64 A Reverserecoverytime trr ISD=16.0A dlSD/dt=100A/μs (note4) - 500 - ns Reverserecoverycharge Qrr - 5.0 - μC Note:1Repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=6.0mH,IAS=16.0A,VDD=50V,RG=25Ω,staringT J=25ºC 3.ISD<16.0A,di/dt<200A/μs,VDD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of6 Rev1.3SEP2014

16A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 16N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Typicaloperatingcharacteristics 4of6 Rev1.3SEP2014

16A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 16N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.3SEP2014

16A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 16N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.3SEP2014