16DR08

16DR NELLSEMI

Document overview

• Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content

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High surge current capability Stud cathode and stud anode version Wide current range TYPICAL APPLICATIONS Page 1 of 5 Glass Passivated Standard Recovery Diodes Voltage up to 1600V VRRM RoHS compliant (Stud Version), 16A DO-203AA(DO-4) Battery charges Converters Power supplies Machine tool controls PRODUCT SUMMARY IF(AV) 16A MAJOR RATINGS AND CHARACTERISTICS PARAMETER UNIT VVRRM IFSM IF(AV) 2I t TJ 2A s A A ºC TEST CONDITIONS VALUES IF(RMS) TC ºC A 140 350 370 612 558 200 to 1600 -65 to 175 50 HZ 60 HZ 50 HZ 60 HZ Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VOLTAGETYPE NUMBER CODE VRRM,MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM,MAXIMUM NON-REPETITIVE PEAK VOLTAGE V VR(BR),MIMIMUM AVALANCHE VOLTAGE V(1) VRRM,MAXIMUM AT TJ=175°C mA 16D( R ) 200 400 600 800 1000 1200 1600 275 500 725 950 1200 1400 1800 500 750 950 1150 1350 (1) Avalanche version only available from VRRM 400V to 1600V Note 1750 Glass passivated chips www.nellsemi.com SEMICONDUCTOR RoHS RoHS 16D(R)Series Nell High Power Products

THERMAL AND MECHANICAL SPECIFCATIONS TEST CONDITIONS VALUES Maximum average forward current at case temperature IF(AV) 180 ° conduction, half sine wave IF(RMS)Maximum RMS forward current 16 A 140 ºC K/WMaximum on-repetitive peak reverse power 10μs square pulse, T J = TJ maximum Maximum peak, one-cycle forward, non-reptitive surge current IFSM t = 10ms t = 8.3 ms t = 10ms t = 8.3 ms t = 10ms t = 8.3 ms t = 10ms t = 8.3 ms No voltage reapplied 100%V RRM reapplied No voltage reapplied 100%V RRM reapplied 2I t Sinusoidal half wave, initial T J = TJ maximum 350 370 295 310 612 558 435 395 2A s A A 6125t = 0.1 to 10 ms, no voltage reapplied 2I √t Maximum l²t for fusing Maximum l² √t for fusing Maximum forward voltage drop VFM 1.25 2A √s Vlpk = 50 A, T J = 25˚C, t p = 400µs rectangular wave (1) Avalanche only for avalanche version, all other parameters the same as 16D Note PARAMETER SYMBOL UNITSTEST CONDITIONS VALUES Maximum junction operating temperature range Maximum storage temperature range - 65 to175 - 65 to 200 ºC 0.5 K/W Maximum thermal resistace, junction to case Maximum thermal resistance case to heatsink 1.6 (13) (10) 0.21 (lbf · in) N · m Allowable mounting torque Approximate weight Case style DO-203AA (DO-4) TJ Tstg RthJC RthCS (lbf · in) N · m g oz. Not lubricated threads Lubricated threads Mounting surface, smooth, flat and greased DC operation See dimensions - link at the end of datasheet PR (1) 1.5 +0 -10% 1.2 -10% ΔRthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION UNITSTEST CONDUCTIONS K/W 180˚ 120˚ 90˚ 60˚ 30˚ 0.31 0.38 0.49 0.72 1.20 0.23 0.40 0.54 0.75 1.21 TJ = TJ maximum

• The table above shows the increment of thermal resistance RthJC when devices Note operate at different conduction angles than DC Page 2 of 5www.nellsemi.com SEMICONDUCTOR RoHS RoHS 16D(R)Series Nell High Power Products

Maximum Allowable Case Temperature(˚C) Maximum Average Forward Power Loss (W) Average Forward Current (A) Average Forward Current (A) Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 3 Forward Power Loss Characteristics Fig.1 Current Ratings Characteristics Fig.2 Current Ratings Characteristics Maximum Allowable Case Temperature(˚C) Maximum Average Forward Power Loss (W) Fig. 4 Forward Power Loss Characteristics Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) 0 4 8 12 16 20 130 140 160 150 180 170 0 5 10 15 20 25 30 130 140 160 150 180 170 0 4 8 12 16 20 25 50 75 100 8K/ W 10K/W 20K/ W 30K/W 50 2510 20 25 3015 7550 100 60° 120 ° 90° 180 °30° RthJC (DC)=1.6K/W 16D(R)Series Conduction Angle 16D(R)Series RthJC (DC)=1.6K/W Conduction Period 120 ° 180 ° DC 90° 30° 60° 30° 60° 90° 120 ° 180 ° 10K/W 20K/W 30K/W Tj = 175°C 16D(R)Series Conduction Angle RMS Limit 6K/W 8K/ W 15K/W 6K/WRMS Limit T = 175°CJ 16D(R)Series Conduction Period RthS A = 4K/W-D elta R 15K/W 60° 30° 180 ° 90° 120 ° DC RthSA = 4K/W-Delta R Page 3 of 5www.nellsemi.com SEMICONDUCTOR RoHS RoHS 16D(R)Series Nell High Power Products

Peak Half Sine Wave Forward Current (A) Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Transient Thermal Impedance ZthJC (K/W) Fig. 5 Maximum Non-Repetitive Surge Current Fig. 6 Forward Voltage Drop Characteristics Fig.7 Maximum Non-Repetitive Surge Current Fig.8 Thermal Impedance ZthJC Characteristics 1 10 100 10 10.10.01 Number Of Equal Amplitude Half Cycle current Pulses(N) Instantaneous Forward Voltage (V) Pulse Train Duration (S) Square Wave Pulse Duration (s) ORDERING INFORMATION TABLE 1 - Current rating: Code = IF (AV) 2 - D = Standard recovery device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) Device code D M16 R 12 1 2 3 4 5 - Voltage code × 100 = VRRM (see Voltage Ratings table) - None = Stud base DO-203AA (DO-4) #10-32 UNF-2A M = Stud base DO-203AA (DO-4) M5×0.8 (not available for avalanche diodes) 125 150 175 200 225 250 275 300 325 2 3 4 5 6 100 1000 125 150 175 200 225 250 275 300 325 350 0.001 100.1 10.01 0.1 Initial T = 175°CJ @60 Hz 0.0083 s @50 Hz 0.0100 s At Any Rated Load Condition And With Rated V RRM Applied Following Surge. 16D(R)Series 16D(R)Series T = 175°CJ T = 25°CJ Maximum Non Repetitive Surge Current Versus Pulse Train Duration Initial T = 175°CJ No Voltage Reapplied Rated V RRM Reapplied 16D(R)Series Steady State Value (DC Operation) RthJC = 1.6K/W 16D(R)Series Page 4 of 5www.nellsemi.com SEMICONDUCTOR RoHS RoHS 16D(R)Series Nell High Power Products

16D(R)Series (0.45/0.48) 11.6/12.4 10.6/11.2 (0.41/0.44) (0.02/0.04) 0.5/1.0 Ø8.5/Ø8.9 (Ø0.33/Ø0.35) Ø1.5/Ø1.7 Ø0.05/Ø0.06 5.0/5.6 (0.19/0.22) #10-32 UNF-2A For metric devices: M5 0.8 x 10.5/11.5 (0.41/0.45) 20.0/21.0 (0.78/0.82) 9.6/10.1 (0.37/0.39) 3.7/4.3 (0.14/0.16) Page 5 of 5www.nellsemi.com Nell High Power Products