162CMQ030 SMCDIODE

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

Schematic & Pin Configuration Applications Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR - 30 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@TC=83°C, rectangularwaveform 80(PerLeg) A160(PerDevice) Peak One Cycle Non-Repetitive Surge Current IFSM 8.3ms,halfSinepulse,TJ =25C 1176 A Non-RepetitiveAvalancheEnergy (PegLeg) EAS TJ=25℃,IAS=16A,L=0.56mH 72 mJ RepetitiveAvalancheCurrent(PegLeg) IAR Currentdecayinglinearlytozeroin 1μsecFrequencylimitedbyTJ max.VA=1.5×VR typical 16 A  150 C TJ operation  Isolated heatsink  Low profile, high current package  Center tap module  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Baseplate: Nickel plated; Terminals: Nickel plated  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request TO-249AA  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection

Data Sheet N1093 Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 162CMQ030 * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistance JunctiontoCase (PerLeg) RJC DCoperation 0.7 C/W TypicalThermalResistance JunctiontoCase (PerPackage) RJC DCoperation 0.35 C/W TypicalThermalResistance,case toHeatSink Rcs Mountingsurface,smoothand greased 0.10 C/W MountingTorque TM - 40(min) Kg-cm58(max) ApproximateWeight wt - 61 g CaseStyle TO-249(9pin) Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PegLeg)* VF1 @80A,Pulse,TJ =25C @160A,Pulse,TJ =25C 0.53 0.63 0.55 0.69 V VF2 @80A,Pulse,TJ =125C @160A,Pulse,TJ =125C 0.43 0.51 0.46 0.63 V ReverseCurrent(PegLeg)* IR1 @VR =ratedVR, TJ =25C 0.17 5 mA IR2 @VR =ratedVR ,TJ =125C 38 280 mA JunctionCapacitance(PegLeg) CT @VR =5V,TC =25C fSIG =1MHz 2800 3700 pF VoltageRateofChange dv/dt - - 10,000 V/s Thermal-Mechanical Specifications:

Data Sheet N1093 Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 162CMQ030 Ratings and Characteristics Curves

Ordering Information

162CMQ030 TO-249AA(Pb-Free) 24pcs/box

Data Sheet N1093 Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 162CMQ030 Mechanical Dimensions TO-249AA (Inches/Millimeters) SYMBOL MillImeters Inches Min. Max. Min. Max. A 60.38 61.58 2.377 2.424 B 8.38 10.16 0.330 0.400 C 2.77 3.57 0.109 0.141 D 37.00 38.20 1.457 1.504 E 0.62 1.32 0.024 0.052 F 6.35 0.250 G 1.27 0.050 H 50.80 2.000 I 6.35 0.250 J 12.70 0.500 K 11.43 0.450 L 4.35 5.05 0.171 0.199 M 24.90 25.90 0.980 1.020 N 0.64 1.26 0.025 0.050 O 11.80 13.51 0.465 0.532 P 8.64 0.340 Q 22.86 0.900 R 7.93 0.312 Marking Diagram WhereXXXX is YYWW 1strow SSYYWW 2ndrow 162CMQ030 3rdrow 123(pin) SS =SS YY =Year WW =Week Cautions：Molding resin EpoxyresinUL:94V-0

Data Sheet N1093 Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 162CMQ030 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..