15N60 ISC
Document overview
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- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 15N60
- FEATURES
- Drain Current I D= 15A@ TC=25℃
- Drain Source Voltage : V DSS= 600V(Min)
- Static Drain-Source On-Resistance : R DS(on) = 0.44Ω(Max)
- High Switching Speed
- APPLICATIONS
- Switching regulators
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plused 60 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 15N60
- ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 3.0 5.0 V VSD Diode Forward On-voltage IS= 15A ;VGS= 0 1.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 7.5A 0.44 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 1 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 2380 3095 pF Crss Reverse Transfer capacitance 23.6 35.5 Coss Output Capacitance 295 385 tr Rise Time VGS=10V; ID=15A; VDD=325V; RG=21.7Ω 125 260 ns td(on) Turn-on Delay Time 65 140 tf Fall Time 65 140 td(off) Turn-off Delay Time 105 220 PDF pdfFactory Pro www.fineprint.cn