15N06 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 15N06
- FEATURES
- Drain Current I D= 15A@ TC=25℃
- Drain Source Voltage- : V DSS= 60V(Min)
- Static Drain-Source On-Resistance : R DS(on) = 0.14Ω(Max)
- Fast Switching
- APPLICATIONS
- Switch regulators
- Switching converters motor drivers and relay drivers
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±15 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plused 40 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 15N06
- ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 60 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-voltage IS= 14A ;VGS= 0 0.14 V RDS(on) Drain-Source On-Resistance VGS= 5V; ID= 7.5A 0.1 Ω IGSS Gate-Body Leakage Current VGS= ±15V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 1 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 900 pF Crss Reverse Transfer capacitance 200 Coss Output Capacitance 450 tr Rise Time VGS=5V; RGS=50Ω ID=7.5A; VDD=25V; 260 ns td(on) Turn-on Delay Time 40 tf Fall Time 200 td(off) Turn-off Delay Time 200 PDF pdfFactory Pro www.fineprint.cn