14N05 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 14N05
- FEATURES
- Drain Current I D= 14A@ TC=25℃
- Drain Source Voltage- : V DSS= 50V(Min)
- Static Drain-Source On-Resistance : R DS(on) = 0.1Ω(Max)
- Fast Switching
- APPLICATIONS
- Switch regulators
- Switching converters motor drivers and relay drivers
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±10 V ID Drain Current-Continuous 14 A PD Total Dissipation @TC=25℃ 48 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 14N05
- ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 50 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-voltage IS= 14A ;VGS= 0 1.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 14A 0.1 Ω IGSS Gate-Body Leakage Current VGS= ±10V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=40V; VGS= 0 1 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 670 pF Crss Reverse Transfer capacitance 50 Coss Output Capacitance 185 tr Rise Time VGS=10V; RGS=0.6Ω ID=7A; VDD=25V; RL=3.57Ω ns td(on) Turn-on Delay Time 13 tf Fall Time 16 td(off) Turn-off Delay Time 42 PDF pdfFactory Pro www.fineprint.cn