13N60

13N60 NELLSEMI

Document overview

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Technical content

13A, 600Volts They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.

DESCRIPTION

Low reverse transfer capacitance (C = 3pF typical)RSS R = 0.26Ω @ V = 10V DS(ON) GS Ultra low gate charge(40nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature

FEATURES

I (A)D 13 V (V)DSS 600 0.26 @ V = 10VGS R (Ω)DS(ON) Q (nC) max.G D (Drain) G (Gate) S (Source) TO-220AB (13N60A) D GDS UNIT V /ns V A mJ ºC -55 to 150 VALUE 8.2 600 ±30 600 116(0.93) 100 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C T =25°C to 150°CJ TEST CONDITIONS R =20KΩGS T =25°C C T =100°C C Operation junction temperature Storage temperature Peak diode recovery dv/dt (Note 3) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Total power dissipation (Derate above 25°C) Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . .lbf in (N m) 300Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1. . Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 1) 4.3 T =25°C C 2.I =4.3A, V =50V, R =25Ω, starting T = 25 °C.AS DD GS J 1.2Repetitive avalanche energy(Note 1)EAR 3.I ≤ 13A, di/dt ≤ 200A/µs, V ≤ V , starting T 5°C.SD DD (BR)DSS J = 2 34(0.27) W(W/°C) TO-220F ( )13N60AF G SD 235Single pulse avalanche energy (Note 2)EAS l =4.3AAS l =4.3A,R =50Ω, V =10V AR GS GS TO-220AB TO-220F www.nellsemi.com Page 1 of 8 MOSFET dv/dt ruggedness

UNITMin. 1.07 3.7 THERMAL RESISTANCE PARAMETER Thermal resistance, junction to case SYMBOL Rth(j-c) Typ. Max. ºC/W 62.5 Thermal resistance, junction to ambientRth(j-a) UNIT V ns μA pF Max. 100 600 0.24 -100 100 0.73 1325 14.5 10.5 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 1mA, D V = 0VGS TEST CONDITIONS I = 1 A, D m V =VDS GS V =600V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS IGSS tr tf Drain to source leakage currentIDSS COSS CRSS td(ON) td(OFF) V/ºC Ω nA T =125°C C Typ.Min. 0.26 V = 380V, DD (Note1,2) V = 10VGS I = 6.5A, R =4.7Ω D G V = 100V, V = 0V, f =1MHzDS GS V = -30V, V = 0VGS DS V = 30V, V = 0VGS DS Static drain to source on-state resistanceRDS(ON) V = 10V, l = 6.5A GS D V =480V, V =0V DS GS

2 V4V =V , I =250μA GS DS DGate threshold voltageVGS(TH)

62.5 ºC/W OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS 1765 ESR Equivalent series resistance (G-S) Drain open 2.8 SWITCHING CHARACTERISTICS 31.5 100 www.nellsemi.com Page 2 of 8 V = 380V, DD (Note1,2) V = 10VGS I = 6.5A, D 13N60 Series gfs Forward transconductance V =40V, I =6.5A DS D S16.3 COSS C effOSS Output capacitance Effective output capacitance V = 380V, V = 0V, f =1MHzDS GS V = 0 to 480V, V = 0VDS GS 145 Ω QG QGS QGD Total gate charge Gate to source charge Gate to drain charge (Miller charge) 30.5 6.0 9.5 nC

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C UNITMax.TEST CONDITIONSPARAMETERSYMBOL Typ.Min. VI = 6.5A, V = 0VSD GS Diode forward voltageVSD 1.2 Integral reverse P-N junction diode in the MOSFET Continuous source to drain currentI S(I )SD 13 D (Drain) G (Gate) S (Source) A Pulsed source currentISM I = 6.5A, V = 0V, SD GS dI /dt = 100A/µs F Reverse recovery timetrr ns280 μCReverse recovery chargeQrr 3.5 Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 13 = 13A 60 = 600V

13 N 60 A

A = TO-220AB AF = TO-220F N = N-Channel ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms D.U.T. + VDS RG VGS VDD Same Type as D.U.T. Driver dv/dt controlled by R* G l controlled by pulse period* SD D.U.T.-Device under test* L Period P.W. VGS (Driver) P.W. Period VDD lSD (D.U.T) (D.U.T) VDS Body Diode Forward Voltage Drop Body Diode Recovery dv/dt Body Diode Reverse Current lRM di/dt l , Body Diode forward currentFM V =10VGS (D.U.T) www.nellsemi.com Page 3 of 8 13N60 Series

■ TEST CIRCUITS AND WAVEFORMS(Cont.) Fig.2A Switching test circuit 10V D.U.T. RL VDS VGS RG VDD Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.2B Switching Waveforms VDS VGS 90% 10% td(ON) tR td(OFF) tF Fig.3A Gate charge test circuit Fig.3B Gate charge waveform Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms Same Type as D.U.T. VDS D.U.T. 3mA VGS 0.3µF 50kΩ 0.2µF 12V QG QGS QGD 10V VGS Charge L VDS RG 10V tp VDD D.U.T. VDD tp Time lAS BVDSS lD(t) VDS(t) www.nellsemi.com Page 4 of 8 13N60 Series

Fig.4 Body diode forward voltage variation vs Source current and Temperature Source-Drain voltage, V (V)SD Capacitance (pF) Drain-Source Voltage, V (V)DS Fig.3 On-Resistance variation vs. Drain current and Gate voltage Drain-Source On-Resistance, R (Ω)DS(ON) Drain current, l (A)D Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics Gate-Source voltage, V (V)GS Total gate charge ,Q (nC)G Reverse drain current, l (A)DR Fig.2 Transfer characteristics Gate-Source voltage, V (V)GS Drain Current,l (A)D Drain Source voltage, V (V)DS 0.2 4 62 8 Drain-Current, l (A)D 0.8 0.6 0.4 0.2 0 10 20 30 40 100 50000 10000 1000 100 0 10 20 30 40 Fig.1 On-State characteristics 0.6 101 www.nellsemi.com Page 5 of 8 ■ TYPICAL CHARACTERISTICS 13N60 Series Notes: 250µs pulse test T = 25°CC Top: VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5.0V Notes: 1. V =20VDS 2. 250µs pulse width -55°C150°C 25°C 150°C 25°C Notes: 1. V =0VGS 2. 250µs pulse Test Notes: 1. V =0VGS 2. 250µs pulse Test C = ( )iss C +C C = shorted gs gd ds C = C +Coss ds gs C = Crss gd Ciss Coss Crss 0.4 0.8 1.2 1.4 0.1 101 100 600 Notes: 1. V =0VGS 2. f=1MHz V =120VDS V =380VDS V =480VDS Notes: 1. =6.5l AD V =20VGS V =10VGS

Fig.7a Maximum safe operating area for 13N60A Drain current, l (A)D Drain-to-Source voltage, V (V)DS Rectangular Pulse Duration, t (sec)1 Thermal response, Rth(j-c) Fig.8a Transient thermal response curve for 13N60A Thermal response, R (t)th(j-c) 0.01 10-310-5 -410 -210 -110 www.nellsemi.com Page 6 of 8 0.1 1 10 100 13N60 Series 1000 100 0.1 0.01 100µs 1ms DC 10ms 10µs Note: 1. T 2. T = 25°CC = 150°CJ 3. Single Pulse Fig.7b Maximum safe operating area for 13N60AF Drain current, l (A)D Drain-to-Source voltage, V (V)DS 0.1 1 10 100 1000 100 0.1 0.01 10µs Note: 1. T 2. T = 25°CC = 150°CJ 3. Single Pulse Operation in This Area is Limited by RDS(ON) 100µs 1ms 10ms DC Operation in This Area is Limited by RDS(ON) Rectangular Pulse Duration, t (sec)1 Fig.8b Transient thermal response curve for 13N60AF Thermal response, R (t)th(j-c) 210-110 010 Notes: 1.R (t)=1.07°C/W Max.th(j-c) 2.Duty factor, D=t /t1 2 3.T -T =P ×R (t)JM C DM th(j-c) PDM (Single Pulse) D = 0.5 0.02 0.1 0.05 0.01 0.2 0.1 PDM Notes: 1.R (t)=3.7°C/W Max.th(j-c) 2.Duty factor, D=t /t1 2 3.T -T =P ×R (t)JM C DM th(j-c) D = 0.5 0.02 0.1 0.05 0.01 0.2 0.01 0.1 10-310-5 -410 -210 110 (Single Pulse)

www.nellsemi.com Page 7 of 8 13N60 Series Fig.10 On-resistance variation vs. temperature Drain current, l (A)D Drain-to-Source voltage, V (V)DS -100 -50 0 100 150 2.0 1.5 1.0 0.5 0.0 Fig.9 Breakdown voltage variation vs. temperature Drain-source breakdown, BVDSS Junction temperature, T (°C)J -100 -50 0 50 100 1.2 1.1 1.0 0.9 0.8 Notes: 1. V =0VGS 2. I =1mAD 150 200 Notes: 1. V =10VGS 2. I =6.5AD 20050 2.5 3.0 Fig.11 Maximum drain current vs.case temperature Drain Current, I (A)D Case Temperature, T (°C)C 25 50 75 100 125 150

www.nellsemi.com Page 8 of 8 TO-220F 1 3 3.3 3.1 13.7 13.5 All dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 TYP 0.9 0.72.54 TYP 16.4 15.4 7.1 6.7 3.7 3.2 10.6 10.4 4.8 4.6 10° 2.85 2.65 3.4 3.1 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) PIN 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 16.13 (0.635) 15.87 (0.625) 2.87 2.62 (0.103) 3.91 (0.154) 3.74 (0.148) (0.113) 29.16 (1.148) 28.40 (1.118) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 15.32 (0.603) 14.55 (0.573) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 2.79 (0.110) 2.54 (0.100) TO-220AB All dimensions in millimeters(inches) D (Drain) G (Gate) S (Source) D (Drain) G (Gate) S (Source) 13N60 Series