13AC12T4V1_08 SEMIKRON

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$ %&'(') Typical Applications* * " + " . " /0( ,1 Remarks % 0 -23 " * * ."$ . 3 +)(4 .5$ 6 " . 3 78 " $ * 9:+(; 6 ..$ " 3 < ; $$$ =+(;4 AC Absolute Maximum Ratings 3 )( 4 Symbol Conditions Values Units IGBT %7 9 3 )( 4 +);; - 9 3 +/( 4 3 )( 4 3 /; 4 ? 3 '5 . /( %7 @); - " -

3 A;; -B -

% : +( -B %7 C +);; - 9 3 +(; 4 +; D Inverse Diode 2 9 3 +/( 4 3 )( 4 3 /; 4 ? 3 '5 . /( +;; Module 6?78 *9 < ;$$$=+/( 4 ;$$$=+)( 4 0 + .$ )(;; - Characteristics 3 )( 4 Symbol Conditions min. typ. max. Units IGBT 8 - % 3 - 3 + . ( (0A &0( - %7 - % 3 -0 - % 3 - %7 9 3 4 %; 9 3 )( 4 ;0A ;0E - 9 3 +(; 4 ;0/ ;0A - % - % 3 +( - 9 3 )(4 & .F 9 3 +(;4 &) && .F %68 . 3 )( 0 - % 3 +( - 9 3 )(4 "*$ +0A( )0;( - 9 3 +(;4 "*$ )0)( )0 ( - ' 2 % 3 )(0 - ;0;E 2 H % 3 <A $$ =+( - + 9 3 )( 4 ; I 3 'E I - 3 &;;- % J 3 JD 3 )( '0/ .K 3 'E I 9 3 +(; 4 ''; J 3 '(; JD - % 3 @+(- &) % )0 69<8 " + LJ1 SKiiP 13AC12T4V1 1 29-10-2008 LAN © by SEMIKRON

MiniSKiiP® 1 3-phase bridge inverter SKiiP 13AC12T4V1 $ %&'(') Typical Applications* * " + " . " /0( ,1 Remarks % 0 -23 " * * ."$ . 3 +)(4 .5$ 6 " . 3 78 " $ * 9:+(; 6 ..$ " 3 < ; $$$ =+(;4 AC Characteristics Symbol Conditions min. typ. max. Units Inverse Diode -2 3 -% 2. 3 )( B - % 3 ; - 9 3 )( 4 "*$ )0 )0/( - 9 3 +(; 4 "*$ )0 ( )0A - -2; 9 3 )( 4 +0' +0( - 9 3 +(; 4 ;0E +0+ - 2 9 3 )( 4 (; .F 9 3 +(; 4 &) &A .F 2 3 )( 9 3 +(; 4 H J 3 & JD D % - % 3 @+(- +0& 69<8 " +0() LJ1 , ) )0( M. Temperature sensor 'N0 3)(4 +;;; I 'N0 3+;;4 +&/; I This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. SKiiP 13AC12T4V1 2 29-10-2008 LAN © by SEMIKRON

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TS) Fig. 3 Typ. turn-on /-off energy = f (IC ) Fig. 4 Typ. turn-on /-off energy = f (RG ) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic SKiiP 13AC12T4V1 3 29-10-2008 LAN © by SEMIKRON

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge SKiiP 13AC12T4V1 4 29-10-2008 LAN © by SEMIKRON

UL recognized file no.E 63 532 SKiiP 13AC12T4V1 5 29-10-2008 LAN © by SEMIKRON