TS13007B TSC

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TS13007B High Voltage NPN Transistor 1/5 Version: A07 TO-220 PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007BCZ C0 TO-220 50pcs / Tube Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V DC 8 Collector Current Pulse IC 16 A DC 4 Base Current Pulse IB 8 A Total Power Dissipation PD 80 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single Pulse. PW = 300uS, Duty ≤2% Pin Definition: 1. Base 2. Collector 3. Emitter

TS13007B High Voltage NPN Transistor 2/5 Version: A07 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 9 -- -- V Collector Cutoff Current VCE =400V, IB=0 ICEO -- -- 1 mA Collector Cutoff Current VCB =700V, IE =0 ICBO -- -- 1 mA Emitter Cutoff Current VEB = 9V, IC =0 IEBO -- -- 1 mA Collector-Emitter Saturation Voltage IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 -- -- -- -- -- -- 1 1.5 3 V Base-Emitter Saturation Voltage IC=2A, IB =0.4A IC=5A, IB =1A VBE(SAT)1 VBE(SAT)2 -- -- -- -- 1.2 1.6 V VCC =125V, IC =5A, IB1 =IB2=1A, tP =25uS Duty Cycle ≤1% tf -- 0.3 0.7 uS Note: pulse test: pulse width ≤300uS, duty cycle ≤2%

TS13007B High Voltage NPN Transistor 4/5 Version: A07 TO-220 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code

TS13007B High Voltage NPN Transistor 5/5 Version: A07