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Document overview
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Technical content
TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR (NPN)
FEATURES
P CM: 2 W ( T a m b = 2 5℃) Collector current I CM: 8 A Collector-base voltage V (BR)CBO: 7 0 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 1mA, I E=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, I B=0 400 V Emitter-base breakdown voltage V(BR)EBO I E= 1mA, IC=0 9 V Collector cut-off current ICBO V CB= 700V, IE=0 1 mA Emitter cut-off current IEBO V EB=9V, IC=0 100 µA hFE(1) V CE= 5V, IC= 2 A 8 40 DC current gain hFE(2) V CE=5 V, IC=5A 5 30 Collector-emitter saturation voltage VCE(sat) I C=2A,IB=0.4A 1 V Base-emitter saturation voltage VBE(sat) I C=2A, IB= 0.4A 1.2 V Transition frequency fT Ic=500mA,VCE=10V f=1MHZ 4 MH Z Collector output capacitance Cob VCE=10,IE=0, f=0.1MHz 80 pF Fall time tf 0.7 µs Storage time ts Vcc=125V, Ic=5A IB1=-IB2=1A 3 µs CLASSIFICATION OF h FE(1) R a n k R a n g e 8-15 15-20 20-25 25-30 30-35 35-40 1 2 3 TO-220 1. BASE 2. COLLECTOR 3. EMITTER