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Dated : 17/09/2016 Rev: 01 SEMTECH ELECTRONICS LTD. 13007 NPN Silicon Transistor for high voltage, high-speed power switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage V CBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage V EBO 9 V Collector Current I C 8 A Total Power Dissipation (Ta = 25 OC) P tot 2 W Total Power Dissipation (TC = 25 OC) P tot 80 W Junction Temperature T j 150 OC Storage Temperature Range T stg - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 5 V, IC = 2 A hFE 8 40 - Collector Base Cutoff Current at VCB = 700 V ICBO - 1 mA Emitter Base Cutoff Current at VEB = 9 V IEBO - 1 mA Collector Base Breakdown Voltage at IC = 1 mA V(BR)CBO 700 - V Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO 400 - V Emitter Base Breakdown Voltage at IE = 1 mA V(BR)EBO 9 - V Collector Emitter Saturation Voltage at IC = 5 A, IB = 1 A VCE(sat) - 2 V Base Emitter Saturation Voltage at IC = 5 A, IB = 1 A VBE(sat) - 1.6 V Transition Frequency at VCE = 10 V, IC = 0.5 A fT 4 - MHz TO-220 Plastic Package

Dated : 17/09/2016 Rev: 01 SEMTECH ELECTRONICS LTD. 13007 TO-220 PACKAGE OUTLINE