13005 DGNJDZ

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Technical content

TO-220 Plastic-Encapsulate Transistors 13005 75$16I6725 131

FEATURES

z 3RZHUVZLWFKLQJDSSOLFDWLRQV z *RRGKLJKWHPSHUDWXUH z /RZVDWXUDWLRQYROWDJH z +LJKVSHHGVZLWFKLQJ MAXIMUM RATINGS (Ta=25Я unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25Я unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage 9 &%2, & P$,( 9 Collector-emitter breakdown voltage 9 &(2, & P$,% 9 Emitter-base breakdown voltage 9 (%2, ( P$,& Collector cut-off current ,&%29 &% 9,( — $ Collector cut-off current ,&(29 &( 9,% — $ Emitter cut-off current ,(%29 (% 9,& — $ K)( 9 &( 9,& $ K)( 9 &( 9,& P$ DC current gain K)( 9 &( 9,& $ 9&( VDW , & $,% $ 9 9&( VDW , & $,% $ 9 Collector-emitter saturation voltage 9&( VDW ,& $,% $$ Base-emitter saturation voltage 9%( VDW , & $,% $ 9 Diode forward voltage 9)(&, & $ 9 Transition frequency I7 9&( 9,& $I 0+] 0+] Rise time WU ,& P$ Storage time W6, & P$0 0 Fall time WI ,& P$ CLASSIFICATION of hFE CLASSIFICATION of W6 Rank % Range 3.0 Symbol Parameter Value Unit VCBO &ROOHFWRU%DVH9ROWDJH 9 VCEO &ROOHFWRU(PLWWHU9ROWDJH 9 VEBO (PLWWHU%DVH9ROWDJH IC &ROOHFWRU&XUUHQW&RQWLQXRXV $ PC &ROOHFWRU3RZHU'LVVLSDWLRQ : RșJA 7KHUPDO5HVLVWDQFHIURP-XQFWLRQWR$PELHQW Я: Tj -XQFWLRQ7HPSHUDWXUH Я Tstg 6WRUDJH7HPSHUDWXUH Я TO-220 %$6( &2//(&725 (0,77(5 Range 10~15 15~20 20~25 25~30 30~35 35~40 40~45 45~50 50~55 55~60 A 2.50 3.54.0 DONGGUAN NANJING ELECTRONICS LTD.,

0.1 1 10 100 1000 400 600 800 1000 1200 0123456 100 200 300 400 500 0.1 1 10 100 1000 100 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100 1000 100 1000 200 400 600 800 1000 1200 0.1 100 1000 0.1 1 10 100 1000 10000 9%(,&²² K)(²² 4000 ȕ=4 Ta=100ć Ta=25ć ,&9%(VDW²² BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) 20mA 18mA 16mA 14mA 12mA 10mA 8mA 6mA 6WDWLF&KDUDFWHULVWLF COMMON EMITTER Ta=25ć 4mA IB=2mA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 4000 COMMON EMITTER VCE=5V Ta=25 o C Ta=100 o C DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COLLECTOR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta ( )ć 3F²²7D ,&9&(VDW²² Ta=100 ȕ=4ć Ta=25 ȕ=4ć Ta=25 ȕ=5ć Ta=100 ȕ=5ć 4000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) ,&I7²² COMMON EMITTER VCE=10V Ta=25 o C TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (A) 4000 Ta=25ćTa=100ć COMMON EMITTER VCE=5V COLLCETOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) 7\\SLFDO&KDUDFWHULVLWLFV &RE &LE f=1MHz IE=0/ IC=0 Ta=25 o C 9&%9(%&RE&LE²² CAPACITANCE C (pF) REVERSE VOLTAGE V (V) Typical Characteristics

A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 3.735 3.935 0.147 0.155 Symbol Dimensions In Millimeters Dimensions In Inches 0.100 TYP 2.540 TYP