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Dated : 17/09/2016 Rev:02 SEMTECH ELECTRONICS LTD. 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage V EBO 9 V Collector Current I C 4 A Power Dissipation (Ta = 25 OC) P tot 2 W Power Dissipation (Tc = 25 OC) P tot 75 W Junction Temperature T j 150 OC Storage Temperature Range T stg - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain a t VCE = 5 V, IC = 1 A a t VCE = 5 V, IC = 2 A hFE hFE Collector Base Cutoff Current at VCB = 700 V ICBO - - 1 mA Emitter Base Cutoff Current at VEB = 9 V IEBO - - 1 mA Collector Emitter Breakdown Voltage a t IC = 10 mA V(BR)CEO 400 - - V Collector Emitter Saturation Voltage a t IC = 1 A, IB = 0.2 A a t IC = 2 A, IB = 0.5 A a t IC = 4 A, IB = 1 A VCE(sat) VCE(sat) VCE(sat) 0.5 0.6 V V V Base Emitter Saturation Voltage a t IC = 1 A, IB = 0.2 A a t IC = 2 A, IB = 0.5 A VBE(sat) VBE(sat) 1.2 1.6 V V Gain Bandwidth Product a t VCE = 10 V, IC = 500 mA, f = 1 MHz fT 4 - - MHz Collector Base Capacitance a t VCB = 10 V, f = 0.1 MHz Cob - 65 - pF TO-220 Plastic Package

Dated : 17/09/2016 Rev:02 SEMTECH ELECTRONICS LTD. 13005

Dated : 17/09/2016 Rev:02 SEMTECH ELECTRONICS LTD. 13005 TO-220 PACKAGE OUTLINE